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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 445-450 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: ZnS:Tm and ZnS:Tm,Cl thin films were grown by metalorganic chemical vapor deposition (MOCVD), using diethylzinc, H2S, Tm(thd)3 (thd=2,2,6,6-tetramethyl-3,5-heptanedione), and HCl. The ZnS:Tm did not contain oxygen which might be introduced through the thd-radical. It thus has only codopant-free Tm3+ luminescent centers probably associated with native defects. The electroluminescence (EL) spectrum of the ZnS:Tm,Cl showed three satellite emission lines in addition to the original emission of the ZnS:Tm, indicating the existence of Tm–Cl complex centers. In contrast, the photoluminescence (PL) spectrum of the ZnS:Tm,Cl under host excitation showed no discernible satellite emission lines. Hence, though the Tm ions in the Tm–Cl complex centers are expected to be charge compensated by Cl or a certain Cl-induced defect, they are rather inactive in the PL excitation while active in the EL excitation. The same properties were observed for the MOCVD-grown ZnS:Sm and ZnS:Sm,Cl [A. Kato, M. Katayama, A. Mizutani, N. Ito, and T. Hattori, J. Appl. Phys. 77, 4616 (1995)], and therefore they probably occur for other rare-earth luminescent centers with Cl codopant. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 6636-6640 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A synthesis method that provides high-purity diamond films is proposed employing direct current arc discharge plasma jet chemical vapor deposition. In the method, an electric current was supplied to a plasma jet stream by applying a bias voltage between a cathode and the substrate on which diamond films were deposited. The Raman spectral analysis showed that the purity of the synthetic diamond was remarkably improved by the application of the bias voltage during deposition. The alternating current calorimetric method was employed to measure the thermal diffusion coefficient of the synthesized diamond films. The thermal diffusion coefficient greatly increased for films deposited with biasing. This improved thermal diffusion coefficient suggests higher purity diamond films. Emission spectral analysis revealed that the quantity of the dissociated hydrogen contributing to the plasma emission near the substrate is greater when biasing is used. Thus, the dissociated and excited hydrogen atoms are considered to play a key role in removing the carbon allotropes other than diamond. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: ZnS:Sm, ZnS:Sm,Cl, and ZnS:Cl thin films were grown by metalorganic chemical vapor deposition using the thd-chelate (thd=2,2,6,6-tetramethyl-3,5-heptanedione) of Sm and hydrogen chloride. The electroluminescence spectrum of the ZnS:Sm,Cl showed three satellite peaks appearing in each of the 7 nm ranges around the three dominant peaks that the ZnS:Sm has originally. The ZnS:Sm,Cl also showed photoluminescence attributed to the self-activated centers, but its intensity was less than 10−2 of that of the ZnS:Cl. The effect of the Cl codoping on Sm3+ luminescent properties is discussed on the basis of the Sm-VZn (zinc vacancy)-Cl complex formation.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 4616-4622 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Sm-doped ZnS thin films were grown by metalorganic chemical vapor deposition using diethyl- zinc, H2S, Sm(thd)3 (thd=2,2,6,6-tetramethyl-3,5-heptanedione), Sm(hfa)3 (hfa=1,1,1,5,5,5- hexafluoro-2,4-pentanedione), SmCl3, and HCl. The following films were prepared: an undoped ZnS, a ZnS:Sm grown with Sm(thd)3 and without HCl, a ZnS:Sm,Cl grown with both Sm(thd)3 and HCl, a ZnS:Cl grown only with HCl, and a ZnS:SmCl3 grown with SmCl3. Very little Sm was incorporated when Sm(hfa)3 was used as the dopant source. In the ZnS:Sm, the Sm was not segregated at grain boundaries, at least at concentrations below 0.2 at. %. In the ZnS:Sm and the ZnS:Sm,Cl, the (200), (220), and (311) reflections of the cubic structure that the undoped ZnS and the ZnS:Cl exhibited were not detected, and preference for the (00⋅1) hexagonal orientation became stronger. The electroluminescence spectrum of the ZnS:Sm,Cl showed three satellite peaks appearing in each of the 7 nm ranges around the three dominant peaks seen in the ZnS:Sm. The total electroluminescence intensity of the ZnS:Sm,Cl increased as a result of the appearance of the satellite peaks. While the ZnS:Sm,Cl showed photoluminescence attributed to the self-activated centers, its intensity was less than 10−2 of that of the ZnS:Cl. A model is suggested that Sm-VZn (zinc vacancy)-Cl complex centers are formed by the Cl codoping and give rise to the satellite peaks. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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