ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
In this communication we present the results of study of new contact systems to GaN epitaxial layers grown on sapphire and n-type 6H-SiC monocrystals. The TiBx nanostructure phase has been used during manufacturing Ti – Al – TiBx – Au and TiBx contact systems. The n-GaN epitaxial layers of 1 µm thickness were grown on [0001] sapphire substrate by vapor-phase epitaxy. The n-type 6H-SiC monocrystals were grown by Lely method with the donor concentration of2x1018 cm3. The layers of Ti, Al, TiBx and Au were deposited by magnetron sputtering followed by high-temperature annealing
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/10/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.483-485.1061.pdf
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