ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
Al-Si and Ge-Si systems were studied for selective epitaxial growth (SEG) of 4H-SiC bythe Vapour-Liquid-Solid mechanism. Al-Si and Ge-Si bilayers stackings were deposited on 8° off,Si face, 4H-SiC substrates. After patterning of the layers, the samples were heated up to 1000°C and1220°C, respectively, for Al-Si and Ge-Si stackings in order to melt the layers. Propane wasintroduced either during the initial heating ramp, before melting of the alloy, or after reaching thetemperature plateau. It was found that introduction of propane before melting was a key parameterin order to improve the homogeneity of the deposit. In both cases, SEG of SiC was achieved.However, the best results were obtained with Ge-Si system giving smooth and uniform ∼100 nmthick epitaxial deposits on all the pattern sizes and shapes. Ge incorporation in the SiC was found tobe rather limited but homogeneous in the layer
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/13/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.527-529.275.pdf
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