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  • 1
    Electronic Resource
    Electronic Resource
    Raman study of cw laser-induced crystallization of a-Si:H films on quartz and sapphire substrates (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 3696-3701 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A Raman-scattering study of amorphous-to-crystalline transition in a-Si:H films on quartz and sapphire substrates induced by cw laser annealing is reported. The threshold power density for crystallization is much greater for a-Si:H films on sapphire than on quartz substrates. It is determined that crystallization occurs in a-Si:H films on quartz substrates due to a bulk-induced solid phase process. Crystallization in a-Si:H films on sapphire substrates is due to liquid phase epitaxy. It was found that annealing with laser powers significantly greater than the threshold powers causes substantial stresses at the interface.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.348462
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  • 2
    Electronic Resource
    Electronic Resource
    Raman study of stress-relieved silicon-on-sapphire films prepared by cw-laser annealing (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 7815-7819 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Continuous-wave laser annealing experiments for producing stress-relieved crystalline silicon-on-sapphire (c-SOS) films are reported. A comparative study of laser annealing has been made on c-SOS and phosphorous-implanted c-SOS films. Raman scattering was used to monitor stresses during the laser annealing process and for characterizing the processed films. The best stress-relieved c-SOS films were obtained by laser annealing the phosphorous-implanted chemical-vapor-deposition-grown SOS films.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347511
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  • 3
    Electronic Resource
    Electronic Resource
    Raman scattering probe of ion-implanted and pulse laser annealed GaAs (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 3921-3926 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report Raman scattering studies of phosphorus-ion-implanted and subsequently pulse laser annealed (PLA) GaAs. The threshold value of implantation fluence for the disappearance of one-phonon modes in the Raman spectrum of ion-implanted GaAs sample is found to be greater than that for the two-phonon modes by an order of magnitude. The phonon correlation length decreases with increasing disorder. The lattice reconstruction process during PLA creates microcrystallites for incomplete annealing, whose sizes can be given by the phonon correlation lengths, and are found to increase with the annealing power density. The intensity ratio of the Raman spectra corresponding to the allowed longitudinal-optical (LO)-phonon mode to the forbidden transverse-optical (TO)-phonon mode, ILO/ITO, is used as a quantitative measure of crystallinity in the implantation and PLA processes. The threshold annealing power density is estimated to be 20 MW/cm2 for 70 keV phosphorus-ion-implanted GaAs at a fluence of 5×1015 ions/cm2. The localized vibrational mode of phosphorus is observed in PLA samples for fluences above 1×1015 ions/cm2. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361818
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  • 4
    Electronic Resource
    Electronic Resource
    Raman scattering in In1−xGaxAsyP1−y quaternary alloys (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 59 (1986), S. 2184-2188 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report a resonant Raman scattering study of quaternary In1−xGaxAsyP1−y alloys which confirms the four-mode behavior of the alloy. The scattering amplitude shows resonance enhancement at the E1 edge of the alloy which diminishes with increasing value of x, corresponding to increasing compositional disorder. This disorder further manifests itself in broadening and line-shape asymmetry of the stronger LO-phonon lines.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.336356
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  • 5
    Electronic Resource
    Electronic Resource
    Raman study of phosphorous-implanted and pulsed laser-annealed GaAs (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 1985-1993 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Raman spectroscopy has been used to study structural disorder in phosphorous ion-implanted GaAs. Line-shape asymmetry of the one-phonon mode and the oscillator strength of the two-phonon combination spectra are used to characterize the disorder. This analysis permits a rough identification of the threshold for amorphization. Localized vibrational mode of phosphorous impurities in ion-implanted and pulsed laser-annealed (PLA) GaAs is reported and its intensity variation with fluence of the implant is studied. The softening of the LO-phonon mode in ion-implanted, PLA GaAs is explained as an inherent impurity effect. The presence of a partially annealed deep layer is investigated by observing a disorder activated mode in the Raman spectrum and by an enhancement in the intensity of the forbidden TO phonon. The occurrence of defects on the surface after PLA is investigated by the wavelength dependence of the LO-phonon softening.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337200
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  • 6
    Electronic Resource
    Electronic Resource
    Raman scattering study of carrier activation in zinc- and silicon-implanted and pulse-laser-annealed GaAs (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 2209-2213 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This study reports the plasmon-LO-phonon coupled modes observed in the Raman spectra of GaAs implanted with p-type (zinc) and n-type (silicon) implants and then pulse laser annealed. The coupled modes are due to the interaction between LO phonon and free carriers and this allows a rough estimation of the carrier concentration from the frequency and width of the L− coupled modes. The wavelength dependence for λ=1.06 and 0.53 μm of the threshold power density for the best carrier activation is reported here. The width of the depletion layer is estimated in silicon implanted samples for various power densities of 22, 26, and 31 MW/cm.2
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.342832
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  • 7
    Electronic Resource
    Electronic Resource
    Raman study of amorphous to microcrystalline phase transition in cw laser annealed a-Si:H films (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 5322-5326 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The dynamic behavior of continuous wave (cw) laser-induced crystallization in the a-Si:H film on a quartz substrate is studied by light scattering. Microcrystals of dimensions less than 30 A(ring) could be grown in a stable state and it is demonstrated that the surface-to-volume correction is essential for estimating the frequency of the crystallinelike mode. It is suggested that bulk-induced crystallization may be responsible for the formation of very small crystallites.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343723
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