ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The temperature-dependent behavior of the solid composition xs of AlxGa1−xAs has systematically been studied as a function of gas phase composition xg in an optimized horizontal metalorganic vapor phase epitaxy reactor at atmospheric pressure. Up to a temperature of 660 °C the Al incorporation is constant but slightly exceeds the Ga incorporation. Above this temperature the Al incorporation strongly increases with temperature. This behavior is most probably related to a change in growth mechanism from mass transport limited growth to a regime where the growth is controlled by thermodynamics, especially for the gallium species.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.341462
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