Library

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    I-V characteristics of electron-cyclotron-resonance plasma-enhanced chemical-vapor-deposition silicon nitride thin films (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 979-984 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Silicon nitride thin films were fabricated by electron-cyclotron-resonance plasma-enhanced chemical-vapor deposition (ECR PECVD) at room temperature and current-voltage characteristics were analyzed. A ledge in the first I-V curve always appeared in ECR PECVD silicon nitride films and then disappeared in the subsequent I-V curves. It turned out that the trapped charges caused by injection of electrons were responsible for the ledge in the I-V curves of fresh samples. A new conduction mechanism for low electric field was proposed, namely trapping current by tunneling. This model turned out to be very successful to explain the low-field I-V characteristics in ECR-PECVD silicon nitride films, such as temperature dependence of I-V curves and the reverse current phenomenon. Computer simulation suggested the trapping cross section as 1×10−16 cm2 and the trap density as 7×1018 cm−3. The calculated trapping cross section corresponds to that of the neutral trap centers, which agrees well with the experimental results.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356455
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Pd induced lateral crystallization of amorphous Si thin films (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 1671-1673 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A thin palladium layer (∼40 A(ring)) was selectively formed on top of amorphous silicon films before annealing and the effects of palladium layer on the crystallization behavior of the amorphous silicon films were investigated. It was observed that the amorphous silicon right under the Pd layer could be crystallized to grain sizes of several hundred angstroms by annealing at 500 °C. In addition, the area between the Pd thin pads, patterned by lithography, was found to be crystallized to grain sizes of a few tens of microns in length by the same annealing. Such lateral crystallization was found to reach more than 100 μm in some cases. The lateral crystallization phenomenon might be useful for the fabrication of low temperature polycrystalline-Si thin film transistors, providing large-grained Si films. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113888
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Improvement of leakage currents of Pt/(Ba, Sr)TiO3/Pt capacitors (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 3053-3055 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Pt/(Ba, Sr)TiO3/Pt capacitors fabricated by sputtering technique showed abnormally higher leakage current when negative bias was applied to the top electrode. In this letter, two kinds of processes were attempted to reduce high leakage current of Pt/BST/Pt capacitors for dynamic random access memory devices: (1) postannealing under O2 atmosphere and (2) adding oxygen into sputtering gas of platinum top electrode. These processes were very effective to reduce the oxygen vacancy in the BST films which are mostly responsible for such a high leakage current. The higher reverse currents were significantly lowered by these processes, so that we could obtain symmetric current versus voltage curves of Pt/BST/Pt capacitors. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.118746
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Thermal stability of Ir/polycrystalline-Si structure for bottom electrode of integrated ferroelectric capacitors (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 467-469 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ir films deposited on polycrystalline silicon (poly-Si), with and without barrier layer, were annealed and the thermal stability was investigated to check the feasibility of the structure for bottom electrode of integrated ferroelectric capacitors. Ir did not form silicide up to 700 °C and did not get oxidized up to 550 °C. It was found that Ir prevented diffusion of oxygen through it when annealed at 700 °C. Ir/poly-Si is believed to be most promising for bottom electrode structure from the results. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.119581
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...