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  • 1
    Electronic Resource
    Electronic Resource
    Theoretical Analysis and Experimental Verification of Triangular Fracture Defects of MgO Single Crystal Substrate in Lapping or Polishing Process (2007)
    s.l. ; Stafa-Zurich, Switzerland
    Key engineering materials Vol. 364-366 (Dec. 2007), p. 739-744 
    Details
    ISSN: 1013-9826
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: MgO single crystal is mainly used as substrate for high temperature superconductor film.Surface quality of MgO substrate has significant effect on the function of high temperaturesuperconductor film. MgO single crystal is a typical hard and brittle material, and is easily cleavedalong the {100} face, so some defects are always generated on the substrate surface while lappingand polishing, which badly affects the surface quality of the substrate. In this paper, a kind oftypical defect, the triangular fracture defect which is on the substrate surface after lapping andpolishing, is analyzed in detail. According to the structure characteristics of the MgO single crystal,and based on the dislocation reaction theory, a formation mechanism of the triangular fracturedefect in lapping and polishing processes is explored. Through the single grain scratch test indifferent directions on the polished surface of MgO{100} single crystal substrates, the formationmechanism of triangular fracture defect in lapping and polishing processes is verified. And duringthe scratch test, the plastic flow of the MgO single crystal material beside the scratch was observed
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/01/56/transtech_doi~10.4028%252Fwww.scientific.net%252FKEM.364-366.739.pdf
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  • 2
    Electronic Resource
    Electronic Resource
    Investigation on Material Removal Rate in Rotation Grinding for Large-Scale Silicon Wafer (2004)
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 471-472 (Dec. 2004), p. 362-368 
    Details
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: In this paper, the formula of material removal rate (MRR) in wafer rotation grindingprocess is deduced based on kinematics. The main effect on MRR of the grit size and the process parameters, including the rotational speed of the cup grinding wheel, the down feed rate of the grinding wheel spindle and the rotational speed of the chuck table, is both theoretically and experimentally investigated. The influence on MRR of the cup wheel grinding status, the geometric dimension of the cup-grinding wheel, the rigidity of the grinding machine and the coolant is also analyzed. The investigating results show that, the increase of the grit size and the down feed rate of the cup grinding wheel results in great increase of the MRR; the MRR increases as the rotational speed of the cup wheel increases whereas the MRR reduces and the ground surface becomes bad due to size effect if the rotational speed of the cup wheel is overlarge; in normal grinding, the MRR decreases as the rotational speed of the chuck table increases. The results provide a theoretical basisto improve grinding efficiency, reduce grinding cost and select the proper parameters of grinding process
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/09/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.471-472.362.pdf
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  • 3
    Electronic Resource
    Electronic Resource
    Modeling and Analyzing on Nonuniformity of Material Removal in Chemical Mechanical Polishing of Silicon Wafer (2004)
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 471-472 (Dec. 2004), p. 26-31 
    Details
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Chemical mechanical polishing (CMP) has already become a mainstream technology in global planarization of wafer, but the mechanism of nonuniform material removal has not been revealed. In this paper, the calculation of particle movement tracks on wafer surface was conducted by the motion relationship between the wafer and the polishing pad on a large-sized single head CMP machine. Based on the distribution of particle tracks on wafer surface, the model for the within-wafer-nonuniformity (WIWNU) of material removal was put forward. By the calculationand analysis, the relationship between the motion variables of the CMP machine and the WIWNU of material removal on wafer surface had been derived. This model can be used not only for predicting the WIWNU, but also for providing theoretical guide to the design of CMP equipment, selecting the motion variables of CMP and further understanding the material removal mechanism in wafer CMP
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/09/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.471-472.26.pdf
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  • 4
    Electronic Resource
    Electronic Resource
    A Method for Grinding Mode Identification in Grinding of Silicon Wafers (2007)
    s.l. ; Stafa-Zurich, Switzerland
    Advanced materials research Vol. 24-25 (Sept. 2007), p. 255-260 
    Details
    ISSN: 1662-8985
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: A new non-destructive method was developed to identify the grinding mode of siliconwafers, which is based on the information of subsurface cracks extracted from the surfacetopography of the ground silicon wafers measured with a 3D surface profiler. We examinedextensive measurement data of the surface topography of silicon wafers processed by single graingrinding or real grinding operation, and our results show that the information about median crackscould be captured if the lateral sampling interval of the 3D surface profiler is small enough, even ifthe grain depth of cut is below 20nm. If the maximum valley of the measured surface topography isapproximately equal to the grain depth of cut, surface formation will be under ductile mode,whereas, if the maximum valley is several times larger than the grain depth of cut, surfaceformation will be under brittle mode. According to this criterion, silicon wafers ground by ductilemode or brittle mode could be identified rapidly and conveniently. Experimental validation showsthat this method is accurate
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/01/39/transtech_doi~10.4028%252Fwww.scientific.net%252FAMR.24-25.255.pdf
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  • 5
    Electronic Resource
    Electronic Resource
    The High-Efficient Low-Cost Wheel-Grinding Technology for CVD Diamond Films (2007)
    s.l. ; Stafa-Zurich, Switzerland
    Advanced materials research Vol. 24-25 (Sept. 2007), p. 295-302 
    Details
    ISSN: 1662-8985
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: CVD diamond films have been used in many high-tech fields with the industrial andscientific developments, while the lagging of the polishing technology for the CVD diamond filmshas limited their widely applications. This paper presents a high-efficient low-cost wheel-grindingtechnology for CVD diamond polishing, and the two key techniques of this technology areintroduced in detail based on thermo-chemical polishing technology. Furthermore, wheel grindingtechnology exhibits a promising perspective for the widely application in the diamond films
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/01/39/transtech_doi~10.4028%252Fwww.scientific.net%252FAMR.24-25.295.pdf
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  • 6
    Electronic Resource
    Electronic Resource
    Polishing of Free-Standing CVD Diamond Films by the Combination of EDM and CMP (2008)
    s.l. ; Stafa-Zurich, Switzerland
    Advanced materials research Vol. 53-54 (July 2008), p. 111-118 
    Details
    ISSN: 1662-8985
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Although various diamond polishing techniques have been studied for many years, noindividual method can polish free-standing CVD diamond film with high efficiency and highpolishing quality. This paper investigates polishing CVD diamond film by the combination ofelectro-discharge machining (EDM) and chemical mechanical polishing (CMP). Scanning electromicroscopy, Optical microscopy, Energy dispersive X-ray analysis, Talysurf surface profiler andRaman spectroscopy were used to evaluate the surface integrity and quality of diamond film beforeand after polishing. Based on the experimental results, the material removal during EDM processcan be a chemo-mechanical process, including gasification, melting, sputtering, oxidation andgraphitization. While in CMP process, diamond was removed under the mechanical andtribochemical interaction. The combination of EDM and CMP has advantages of high efficiency,high polishing quality and low damage. It is suitable to polish large area free-standing CVDdiamond film
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/01/41/transtech_doi~10.4028%252Fwww.scientific.net%252FAMR.53-54.111.pdf
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  • 7
    Electronic Resource
    Electronic Resource
    Friction-Based 〈i〉In Situ 〈/i〉Endpoint Detection of Copper CMP Process (2008)
    s.l. ; Stafa-Zurich, Switzerland
    Advanced materials research Vol. 53-54 (July 2008), p. 125-130 
    Details
    ISSN: 1662-8985
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Chemical mechanical polishing (CMP) has been extensively used in the integrate circuit(IC) manufacturing industry as a widely accepted global planarization technology, accurate in situendpoint detection of CMP process can reduce the product variance, significantly improve yield andthroughput. A CMP in situ endpoint detection system, which measured the friction and downforceduring CMP process using a specially designed three-axis strain gauge force sensor, was developed.The frictional transition from copper (Cu) to tantalum (Ta) barrier as well as Ta barrier to silicondioxide (SiO2) dielectric was detected during CMP process. The experimental results showed thatthe change of friction could be detected when the polished material changed. The developed CMP insitu endpoint detection system is feasible for 300 mm and 450 mm copper CMP process
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/01/41/transtech_doi~10.4028%252Fwww.scientific.net%252FAMR.53-54.125.pdf
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  • 8
    Electronic Resource
    Electronic Resource
    Novel Measurement Technique on 3D Surface Topography of Polishing Pad (2008)
    s.l. ; Stafa-Zurich, Switzerland
    Advanced materials research Vol. 53-54 (July 2008), p. 265-272 
    Details
    ISSN: 1662-8985
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Among the properties of polishing pad, the surface roughness plays a crucial role in CMP(Chemical Mechanical Planarization) process. However, there is no acknowledged standard formeasuring and characterizing the roughness of pad surface in 3D measurement. In this paperTalysurf CLI 2000 working on the principle of dynamic confocal measurement was initiallysuggested to measure the 3D surface topography of polishing pads through theoretical andexperimental analysis. In addition, based on the Nyquist folding frequency and the statistical theory,a selection technique for sampling interval and sampling area was proposed and verified throughexperiments. The results showed that Talysurf CLI 2000 is more suitable than NewView to measurethe 3D surface topography of polishing pads. 2μm sampling interval, 0.5×0.5mm2 sampling areaand 10μm interval, 1×1mm2 area are respectively recommended for IC1000/SubaIV and SubaIVpolishing pad
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/01/41/transtech_doi~10.4028%252Fwww.scientific.net%252FAMR.53-54.265.pdf
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  • 9
    Electronic Resource
    Electronic Resource
    The Characteristics of Surface Residual Stresses by Plane Grinding Invar and the Effects of Them on Structural Stability (2008)
    s.l. ; Stafa-Zurich, Switzerland
    Advanced materials research Vol. 53-54 (July 2008), p. 293-298 
    Details
    ISSN: 1662-8985
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Invar 36 alloy is widely used in manufacturing instruments because of its minimalthermal expansion coefficient. As an important material for the components of precision orsuper-precision instruments, the process methods for Invar and the structure stability after itsmachining is necessary. In this paper, the residual stresses of the Invar samples after plane grindingwere measured. The experimental results indicate that clear tension stress exists in the surface ofInvar alloy along the grinding direction, while, on the cross direction, the states of surface residualstresses are complicated and affected by the parameters of grinding. A typical disk model has beencalculated and analyzed by Finite Element Method (FEM), and the deformation caused by surfaceresidual stress was presented. Finally, the effect of grinding as final working procedure on thestability of Invar structure was estimated
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/01/41/transtech_doi~10.4028%252Fwww.scientific.net%252FAMR.53-54.293.pdf
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  • 10
    Electronic Resource
    Electronic Resource
    Friction Characteristic of Wafer Surface in Chemical Mechanical Polishing (2005)
    s.l. ; Stafa-Zurich, Switzerland
    Key engineering materials Vol. 291-292 (Aug. 2005), p. 389-394 
    Details
    ISSN: 1013-9826
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: The friction force of wafer surface plays an important role in removing material of wafer surface and the friction force distribution on wafer surface has a direct influence on nonuniformity of material removal in wafer CMP process. In this paper, models of friction force distribution and friction force on wafer surface were built according to the CMP process. Then the relationships between friction force and CMP process variables, such as the motion variables and pressure, are obtained. Measuring data of friction force on wafer surface are accord with analytical results. The research of this paper is helpful to further understanding the material removal mechanism in wafer CMP
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/01/49/transtech_doi~10.4028%252Fwww.scientific.net%252FKEM.291-292.389.pdf
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