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  • 1
    Electronic Resource
    Electronic Resource
    Shot noise in solid state diodes
    Amsterdam : Elsevier
    Solid State Electronics 29 (1986), S. 1069-1071 
    Details
    ISSN: 0038-1101
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0038-1101(86)90107-3
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Ballistic transport in hot-electron transistors (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 3816-3820 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We demonstrate that the performance of hot-electron transistors and other ballistic devices can be greatly improved if a focused beam of energetic electrons is injected into the active region of a high-speed device. The results of the Monte Carlo simulations of 72 000 electrons show that the angular distribution of electrons arriving at the collector of a hot-electron transistor is sharper since those electrons injected into the base under large angles primarily contribute to the base current. Our calculations also confirm that ballistic motion may be considerably enhanced by the built-in electric field in the base region. Based on these results, we propose a new device—the double base hot-electron transistor—where the first base acts as an "electron gun'' focusing and accelerating the electron beam, which is then injected into the second (active) base where an input signal is applied. Our calculations show that the mean transit time of electrons traversing the active base can be considerably reduced and that the fraction of energetic electrons reaching the collector can be significantly increased in the proposed double-base hot-electron transistor in comparison with a conventional hot-electron transistor.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.339223
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Study of resonant tunneling structures: A hybrid incremental Airy function plane-wave approach (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 3011-3017 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A numerical procedure for the calculation of the electron tunneling current through an arbitrary potential profile has been developed. It involves subdividing the profile into a number of strips for which a linear approximation of the potential is appropriate. A solution of the Schrödinger equation in the form of Airy functions is obtained. These functions are linked through boundary conditions at the interface of the strips. An expression for the transmission coefficient of the structure is obtained. The approach is found to accelerate the calculation of the electrical characteristic of resonant tunneling devices. An analysis is performed of tunneling through parabolic quantum-well and half-parabolic quantum-well structures in the presence of an electric field. The room-temperature current-voltage characteristic for the half-parabolic quantum-well structure is calculated and is found to be rectifying with multiple peaks and regions of negative differential resistance. It is also found to have a relatively high peak-to-valley ratio and high peak current density.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.345423
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    Paper (German National Licenses)
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  • 4
    Electronic Resource
    Electronic Resource
    Temperature dependence of electron mobility and peak velocity in compensated GaAs (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 922-923 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The temperature dependences of electron mobility and peak velocity in compensated GaAs have been calculated by using a Monte Carlo technique. It is found that both mobility and peak velocity are substantially reduced and less temperature dependent in compensated material because of an increased impurity scattering.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99274
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  • 5
    Electronic Resource
    Electronic Resource
    Erratum: Temperature dependence of electron mobility and peak velocity in compensated GaAs [Appl. Phys. Lett. 52, 922 (1988)] (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 1219-1219 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100422
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    Paper (German National Licenses)
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  • 6
    Electronic Resource
    Electronic Resource
    Resonant interband tunnel diodes (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 546-548 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Novel device structures are proposed, incorporating quantum wells and a pn diode structure. Such a device combines the structure and behavior of both resonant tunneling diodes and conventional tunnel diodes, leading to high speed and low excess current. There is interband tunneling between the conduction band and the valence band, as is in the case for a tunnel diode, but carriers are confined within quantum wells. Under small forward bias the diodes are expected to behave in a manner very similar to that of a tunnel diode formed of bulk material. Under large forward bias, however, the devices act much like resonant tunneling diodes, and display additional negative resistance regions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100926
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    Paper (German National Licenses)
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