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  • 1
    Electronic Resource
    Electronic Resource
    Proton irradiation-induced intermixing in InGaAs/(Al)GaAs quantum wells and quantum-well lasers (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 6786-6789 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Proton irradiation with subsequent rapid thermal annealing was used to investigate intermixing of InGaAs/GaAs and InGaAs/AlGaAs quantum wells. Large photoluminescence (PL) energy shifts were observed in both materials. Comparatively, InGaAs/AlGaAs samples showed larger PL energy shifts than InGaAs/GaAs samples because of the presence of Al in the barriers and also better recovery of PL intensities, which is mainly due to dynamic annealing effects in AlGaAs during irradiation. Based on this, InGaAs/AlGaAs quantum-well lasers were fabricated and up to 49.3-nm-emission wavelength shift was observed in the proton-irradiated laser with no significant degradation in device characteristics. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.370291
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  • 2
    Electronic Resource
    Electronic Resource
    Effects of anodic oxide induced intermixing on the structural and optical properties of quantum wire structure grown on nonplanar GaAs substrate (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 5014-5020 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Effects of anodic oxide induced intermixing on the structural and optical properties of stacked GaAs quantum wire (QWR) structures grown on a sawtooth-type nonplanar GaAs substrate are investigated. Cross-sectional transmission electron microscope (XTEM) observation, temperature dependent photoluminescence (PL) and cathodoluminescence (CL) imaging were used. Intermixing was achieved by pulsed anodic oxidation of the GaAs cap layer and subsequent rapid thermal annealing, was verified by XTEM analysis. A significant enhancement of QWR PL is observed accompanied by a notable blueshift of the sidewall quantum well (SQWL) PL due to the intermixing. Furthermore, an extended necking region is observed after the intermixing by spatially resolved CL. The temperature dependence of the PL intensities of both SQWL and QWR show maxima at approximately T∼110 K indicating the role of the extended necking region in feeding carriers to SQWL and QWR. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363546
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  • 3
    Electronic Resource
    Electronic Resource
    Growth of Si and C δ-doped nipi doping superlattices in GaAs by metal organic vapor phase epitaxy (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 4218-4220 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have optimized growth conditions of metal organic vapor phase epitaxy (MOVPE) in order to grow Si and C δ-doped nipi doping superlattices in GaAs. Trimethylaluminium (TMAl) and silane (SiH4) were used as p-type and n-type doping precursors, respectively. We report that at 630 °C, full compensation of free electrons and holes can be obtained in the MOVPE-grown Si and C δ-doped nipi doping superlattices over a very wide range of the sheet carrier densities (1012–1013 cm−2) by choosing proper TMAl flow rate and Si δ-doping time or SiH4 flow rate. The experimental results on electrical and optical characterization of Si and C δ-doped nipi doping superlattices in GaAs with 150 A(ring) thick undoped spacer layers are presented. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116991
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  • 4
    Electronic Resource
    Electronic Resource
    Photoluminescence study of the dynamical properties of GaAs sawtooth superlattices (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 5748-5752 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The dynamic properties of a sawtooth superlattice (δ-doped nipi) were examined by photoluminescence (PL) spectroscopic techniques. The structure was grown on a semi-insulating GaAs substrate by metalorganic vapor phase epitaxy, using C and Si δ-doping. The excitation intensity dependence of the sample's PL was measured over six decades which produced a shift of 200 meV in the peak of the PL photon energy. The dynamic properties of the sawtooth superlattice were probed using time resolved PL and carrier lifetime measurements. Time resolved PL was measured over 6 orders of magnitude in delay time. The luminescence wavelength from the sawtooth superlattice sample was found to shift to low energies over time after pulsed excitation, indicating the temporal evolution of the band edges. A new and sensitive technique for measuring radiative recombination lifetimes at low excitation intensities was developed. Therefore δ-doped sawtooth superlattices are shown to have a tunable band gap as well as an intensity tunable carrier lifetime. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.366439
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  • 5
    Electronic Resource
    Electronic Resource
    Theory of magnetic-field enhancement of surface-field terahertz emission (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 2104-2106 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present a theoretical treatment of surface–field THz generation in semiconductors, which explains the power enhancement observed when a magnetic field is applied. Our model consists of two parts: a Monte Carlo simulation of the dynamics of carriers generated by a subpicosecond optical pulse, and a calculation of the resulting THz radiation emitted through the semiconductor surface. The magnetic field deflects the motion of the carriers, producing a component of the THz dipole parallel to the surface. This causes the power transmitted through the surface to be increased by more than one order of magnitude. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1433187
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  • 6
    Electronic Resource
    Electronic Resource
    Improved carrier collection in intermixed InGaAs/GaAs quantum wells (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 3408-3410 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have used photoluminescence up conversion to study the carrier capture times into intermixed InGaAs/GaAs quantum wells. We have found that the capture into the intermixed wells is markedly faster than capture into the reference (unintermixed) quantum wells. The reasons for the significant reduction in the capture time is related to the shape of the intermixed quantum well. Such a reduction in the capture time is beneficial both in terms of the quantum efficiency and the frequency response of intermixed optoelectronic devices. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122780
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  • 7
    Electronic Resource
    Electronic Resource
    Enhanced coherent terahertz emission from indium arsenide in the presence of a magnetic field (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 2038-2040 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We demonstrate enhancement of terahertz (THz) emission from indium arsenide at 170 K in magnetic fields (B) up to 8 T. An order of magnitude increase in visible to terahertz conversion efficiency was observed, with no suggestion of saturation of the TE polarization at higher magnetic fields. Free-space electro-optic sampling measurements confirmed the coherent nature of this radiation over the field range investigated, and gave an insight into the carrier motion subsequent to photoexcitation, which may be responsible for the observed THz power enhancement. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.126247
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  • 8
    Electronic Resource
    Electronic Resource
    Interdiffused quantum-well infrared photodetectors for color sensitive arrays (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 923-925 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Proton implantation and rapid thermal annealing were used to tune the infrared spectral response of quantum-well infrared photodetectors (QWIP) by up to 1.4 μm. Multiple proton implants at energies between 200 and 420 keV were used to create homogeneous quantum-well intermixing throughout the device's multiple-quantum-well structure. Photoluminescence and spectral response measurements were used to study the effect of proton implantation on QWIPs for a series of doses up to 3.5×1015 protons cm−2. By using a mask during implantation, a method of constructing a color sensitive array is proposed. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.124555
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  • 9
    Electronic Resource
    Electronic Resource
    Static Electrification by Nonwetting Liquids. Contact Charging and Contact Angles (1995)
    s.l. : American Chemical Society
    Langmuir 11 (1995), S. 4153-4158 
    Details
    ISSN: 1520-5827
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/la00010a083
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