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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 4966-4974 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The microstructures of two sets of hydrogenated amorphous silicon–germanium (a-Si1−xGex:H) alloys prepared by the plasma-enhanced, chemical-vapor-deposition technique with and without hydrogen dilution of the source gases (silane and germane) have been analyzed by small-angle x-ray scattering (SAXS), infrared vibrational spectroscopy, and flotation density measurements. Optoelectronic properties of codeposited films have also been characterized. Hydrogen dilution suppresses dihydride/polyhydride formation, reduces bonded H content, and reduces the SAXS-detected microstructure for x(approximately-greater-than)0. Studies of anisotropy in the SAXS intensity indicate an increased amount of oriented microstructure as Ge is added, consistent with a trend toward columnarlike growth in both undiluted and hydrogen-diluted films, but the diluted films have a significantly reduced degree of such oriented microstructure. The improvement in the microstructure of a-Si1−xGex:H films by H2 dilution correlates with concomitant improvement of optoelectronic properties. The modification of microstructure due to H2 dilution of the source gases is discussed in terms of growth mechanisms of alloy films. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 7829-7832 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An experimental investigation of misfit dislocation generation mechanisms at an InGaAs/GaAs heterointerface is reported. InGaAs epitaxial layers were grown by low-pressure organometallic vapor-phase epitaxy on patterned and unpatterned GaAs substrates having etch-pit densities (EPD) of 200, 1400, and 10 000 cm−2. After epitaxial growth, the samples were annealed at temperatures between 650 and 750 °C, and analyzed by optical and transmission electron microscopy. For the range of substrate EPD studied, it was found that the substrate EPD controls the onset of misfit dislocation generation for low-temperature epitaxy (〈600 °C) on unpatterned substrates. When epilayers were annealed at 750 °C, the density of misfit dislocations was independent of the substrate EPD. These studies also show that the dominant misfit dislocation generation mechanism for films grown on patterned substrates is nucleation at the growth-mesa edge. The density of preexisting threading dislocations has little influence on misfit dislocation generation for films selectively deposited within 100×100 μm2 growth windows. For selective heteroepitaxy, misfit dislocation generation strongly depends on the crystallographic orientation of the growth-mesa edge. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 100 (1994), S. 4548-4553 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: That the equilibrium state of impurity-free polycrystalline ice contains water has been expressed in terms of free-energy changes, and further developed to show that liquid in cavities formed at grain junctions in a microcrystalline solid containing no impurities affects its electrical properties and increases its heat capacity. General formulas for the volume of a liquid contained in the pockets formed at four-grain junctions and veins formed at three-grain junctions in equilibrium in an impurity-free polycrystalline mass are given. The variation of the volume fraction of intergranular water in impurity-free ice and the ice's total free energy have been calculated for different grain sizes and temperatures. Calculations also confirm that intergranular water or premelting contributes significantly to the pure ice's heat capacity.
    Type of Medium: Electronic Resource
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  • 4
    ISSN: 1471-0528
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: Summary. In order to determine the most effective regimen for the prevention of infection after elective hysterectomy, 300 patients were randomly assigned to receive three perioperativc doses of either amoxycillin-clavulanic acid (1.2 g intravenous) or metronidazole (1 g suppository). Of the 280 patients who were assessable 138 were given amoxycillin-clavulanic acid and 142 received metronidazole; 268 underwent abdominal hysterectomy and 12 had vaginal hysterectomy. Patients in the amoxycillin-clavulanic acid group had significantly less infectious morbidity (13.8%) than those in the metronidazole group (33.1%). There were also statistically significant differences in favour of amoxycillin-clavulanic acid with respect to operative site infection, duration of hospital stay, need for postoperative antimicrobials, and surgery for operative site infection. But for one isolate of Bacteroides fragilis, all pathogens isolated from wound infections in the metronidazole group were aerobes. No anaerobes were isolated from patients in the amoxycillin-clavulanic acid group. The results suggest that prophylaxis for hysterectomy should consist of an agent, or combination of agents, with activity against both aerobic and anaerobic bacteria. Amoxycillin-clavulanic acid fulfils this criterion and appears to be effective and safe.
    Type of Medium: Electronic Resource
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  • 5
    ISSN: 1520-6041
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Industrial & engineering chemistry 44 (1952), S. 2233-2234 
    ISSN: 1520-5045
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Process Engineering, Biotechnology, Nutrition Technology
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 3781-3784 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An analytical method for quantitative interpretation of GaAs photoluminescence spectra was developed. Because of various transition mechanisms the photoluminescence spectrum of a sample may vary significantly under different measurement conditions. Based on a proposed scheme of transition priorities, spectra taken at various excitation powers were analyzed. Comparing results of undoped GaAs epitaxial layers grown by organometallic chemical vapor deposition under similar conditions but different V/III ratios, an optimum ratio corresponding to a minimum number of shallow impurities was clearly identified. Carbon and zinc were found to be the major shallow acceptors in most samples. At very low V/III ratios, carbon was the most dominant acceptor. The carbon concentration diminishes with an increasing ratio and the amount of zinc becomes more significant.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 59 (1986), S. 2592-2594 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Generation lifetime and surface generation velocity were measured by capacitance transient analysis of metal-oxide-semiconductor capacitors to study the effect of high-energy neutron irradiation in the fluence range 1012–1014 cm−2. Thirty-minute isochronal anneals show that the generation lifetime and surface generation velocity recover their preirradiation values at 470 °C, which is close to the temperature for annealing of recombination lifetime decreases produced by electron irradiation. The relatively low value of annealing temperature for the recovery of lifetime after neutron irradiation is in sharp contrast with the improved thermal stability of lifetime effects produced by ion implantation into silicon when compared to the case of electron irradiation.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 483-488 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Degradation of ZnS and Y2O2S cathodoluminescent (CL) phosphors has been studied at 1–4 keV using Auger electron spectroscopy simultaneous with CL. The data are consistent with an electron stimulated surface chemical reaction (ESSCR) which led to destruction of ZnS and formation of a surface nonluminescent ZnO layer as well as injection of oxygen point defects into the near-surface region. In the case of Y2O2S:Eu, the electron beam stimulated removal of S and formation of Y2O3:Eu in the presence of 1×10−6 Torr of oxygen. A model is presented which predicts that degradation by the ESSCR should increase with pressure in the vacuum, depend exponentially on electron dose, increase as the primary beam energy was reduced below 4 keV, and depend upon the type of gas present in the vacuum. These trends were demonstrated from the experimental data. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 10
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: During lower hybrid current drive on tokamaks, suprathermal electrons are generated that emit hard x-ray bremsstrahlung. A pinhole camera has been installed on the PBX-M tokamak that records 128×128 pixel images of the hard x-ray plasma bremsstrahlung emitted in the 30–200 keV photon energy range. The camera has a temporal resolution of 3 ms and a spatial resolution of 3–4 cm in the plasma. The detector is a 230-mm-diam hard x-ray image intensifier. This instrument has identified hollow radiation profiles on PBX-M, indicating off-axis current drive. A detailed account of the construction of the hard x-ray camera, its operation, and its performance is given.
    Type of Medium: Electronic Resource
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