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  • 1
    Electronic Resource
    Electronic Resource
    Creep of ice as a function of hydrostatic pressure (1983)
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 87 (1983), S. 4064-4066 
    Details
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/j100244a013
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  • 2
    Electronic Resource
    Electronic Resource
    Increased Expression of Retinal TIMP3 mRNA in Simplex Retinitis Pigmentosa Is Localized to Photoreceptor-Retaining Regions (1995)
    Oxford, UK : Blackwell Science Ltd
    Journal of neurochemistry 64 (1995), S. 0 
    Details
    ISSN: 1471-4159
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: Abstract: The human tissue inhibitor of metalloproteinases-3 (TIMP3) gene is the most recently characterized member of a family of genes whose products are implicated in extracellular matrix (ECM) remodelling. We previously described an increase in expression of TIMP3 mRNA in retinas affected by the progressive photoreceptor degenerative disease, simplex retinitis pigmentosa (RP). To gain further insight into the association between TIMP3 overexpression and retinal degeneration, we have analyzed the cellular localization of TIMP3 mRNA in control and simplex RP retinas using in situ hybridization. No TIMP3 mRNA expression was detectable in control neural retina. In RP-affected retinas, overexpression of TIMP3 mRNA was observed in photoreceptor inner segments and in the ganglion cell layer only in those regions retaining relatively nondystrophic retinal architecture. Modulation of TIMP3 expression in these regions, possibly in association with matrix metalloproteinases, may reflect remodelling of the retinal ECM and concomitant reorganization of neuronal connectivity.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1046/j.1471-4159.1995.64052370.x
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  • 3
    Electronic Resource
    Electronic Resource
    Lack of Causal Relationship Between Clusterin Expression and Photoreceptor Apoptosis in Light-Induced Retinal Degeneration (1999)
    Oxford, UK : Blackwell Publishing Ltd
    Journal of neurochemistry 72 (1999), S. 0 
    Details
    ISSN: 1471-4159
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: Abstract: Induction of apoptosis in the retina leads to cellular death by molecular mechanisms that are not well understood. Clusterin expression is increased in tissues undergoing apoptosis, including retinal neurodegenerative states, but the causal relationships remain to be clarified. To gain insight into clusterin's role in photoreceptor apoptosis, the cellular distribution of clusterin mRNA was compared with the pattern of apoptotic nuclear labelling in a rat model of light-induced retinal degeneration. In control retinal sections, clusterin mRNA was localized to the retinal pigment epithelium cells, photoreceptor inner segments, inner nuclear layer, and ganglion cell layer. Clusterin expression decreased in photoreceptors and retinal pigment epithelium cells, which progressively degenerated, and increased in preserved inner nuclear layer, in proportion to the duration of light exposure in both cyclic light- and dark-reared animals. These results suggest that clusterin is not causally involved in apoptotic mechanisms of photoreceptor death, but may relate to cytoprotective functions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1046/j.1471-4159.1999.0721923.x
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  • 4
    Electronic Resource
    Electronic Resource
    Stress measurements in silicon devices through Raman spectroscopy: Bridging the gap between theory and experiment (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 7148-7156 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The different steps that have to be taken in order to derive information about local mechanical stress in silicon using micro-Raman spectroscopy experiments, including theoretical and experimental aspects, are discussed. It is shown that the calculations are in general less complicated when they are done in the axes system of the sample. For that purpose, the secular equation is calculated in the axes system [110], [−110], [001], which is important for microelectronics structures. The theory relating Raman mode shift with stress tensor components is applied using two analytical stress models: uniaxial stress and planar stress. The results of these models are fitted to data from micro-Raman spectroscopy experiments on Si3N4/poly-Si lines on silicon substrate. In this fit procedure, the dimensions of the laser spot and its penetration depth in the substrate are also taken into account. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361485
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  • 5
    Electronic Resource
    Electronic Resource
    6.alpha.- and 6.beta.-Hydroxyestradiol. Circular dichroism and substantiation of configurational assignments (1973)
    s.l. : American Chemical Society
    The @journal of organic chemistry 38 (1973), S. 3797-3798 
    Details
    ISSN: 1520-6904
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/jo00961a033
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  • 6
    Electronic Resource
    Electronic Resource
    Pseudomorphic GaAs/InGaAs single quantum wells by atmospheric pressure organometallic chemical vapor deposition (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 293-295 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High-quality pseudomorphic GaAs/In0.12Ga0.88As single quantum wells (QW's) were prepared by atmospheric-pressure organometallic chemical vapor deposition. Photoluminesence spectra measured at 2.5 and 78 K exhibit intense, sharp peaks [full width at half-maximum (FWHM)=2.6 meV for a 17-A(ring) well at 78 K] from the quantized energy transitions of the QW's. Peak positions agree well with a square well calculation that includes the strain-induced band-gap shift in the In0.12Ga0.88As. Quite unlike previous work with QW's in which the FWHM was found to exponentially increase with decreasing well width, we observed a narrowing of the QW signals as the well width went below ∼30 A(ring). In larger well samples (300 A(ring)), the onset of surface crosshatch patterns was observed, which is expected from critical thickness theory.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99497
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  • 7
    Electronic Resource
    Electronic Resource
    In situ thermal oxidation for surface cleaning and mask generation prior to selective area epitaxy (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 2068-2070 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Dry thermal oxidation of GaAs and AlAs has been carried out in an organometallic chemical vapor deposition system. This in situ process performed either before or after an epitaxial growth serves the purposes of surface cleaning and mask generation for selective area epitaxy of various III-V semiconductors. AlAs oxidized immediately after growth and patterned for the next regrowth provides better oxide-semiconductor interfaces and minimizes wafer handling. Pre-epitaxy oxidation at 435 °C on a patterned wafer with AlAs/GaAs areas resulted in a selective oxide mask. Since thermal oxides of GaAs sublime at temperatures 〉600 °C, a 700 °C pregrowth annealing thus thermally cleans the oxidized GaAs areas while the oxides of AlAs remain as a mask for the following regrowth. Photoluminescence results indicate that high quality regrown interfaces have been obtained.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100321
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  • 8
    Electronic Resource
    Electronic Resource
    Photoluminescence characteristics of selectively grown GaAs and AlGaAs/GaAs quantum wells (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 2466-2469 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: GaAs and AlGaAs/GaAs multiple quantum wells (MQW) were selectively deposited on GaAs substrates patterned with native oxide, and photoluminescence (PL) characteristics of both the single crystal grown in open windows and the polycrystalline material deposited on the oxide masks were studied. Well-resolved distinct quantum-well (QW) transition peaks indicate no degradation of the epitaxial material quality in the small single-crystal areas. The PL of polycrystalline GaAs is very weak and the peak is centered around the near-band-edge transition energy of GaAs. Polycrystalline MQW structures exhibit much stronger PL signals, and the peak position shifts corresponding to the widths of the QWs grown. These results suggest that the quantum size effect is preserved in the polycrystalline material.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.339455
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  • 9
    Electronic Resource
    Electronic Resource
    Temperature stability of AlxGa1−xAs (0≤x≤1) thermal oxide masks for selective-area epitaxy (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 922-925 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The use of thermal oxides of AlxGa1−xAs (0≤x≤1) as masking materials for selective-area epitaxy by organometallic chemical-vapor deposition has been investigated. It was found that the thermal oxide of GaAs is only applicable for low growth temperatures (≤600 °C), and the addition of aluminum significantly improves the thermal stability of the oxide. The oxide of Al0.4Ga0.6As is suitable for high-temperature deposition, but there are criteria for the thickness and oxidation temperature. Thin layers of AlAs oxidized at 475 °C are excellent masks and allow precise thickness control. Promising results of selective-area deposition using these aluminum oxide masks have been obtained. High-quality single crystal grew in mask openings uniformly surrounded by dense and fine-grain polycrystalline deposits, producing a planar duplication of the original pattern.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341894
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  • 10
    Electronic Resource
    Electronic Resource
    α-Bungarotoxin Binding in House Fly Heads and Torpedo Electroplax (1981)
    Oxford, UK : Blackwell Publishing Ltd
    Journal of neurochemistry 36 (1981), S. 0 
    Details
    ISSN: 1471-4159
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: Abstract: House fly heads contain a site that binds α-bungarotoxin with high affinity. It is present at about 23 pmol/g of heads and binds α-bungarotoxin (labeled with [3H]pyridoxamine phosphate) reversibly with a Kd of 6 nM. The effects of 48 drugs have been compared on the α-bungarotoxin binding sites of house fly and Torpedo. The pharmacology of the house fly site is similar to that previously reported for neuronal α-bungarotoxin binding sites in both vertebrates and invertebrates and is distinguishable from that of the classic nicotinic neuromuscular acetylcholine receptor, as exemplified by that of Torpedo electroplax. Differences between the house fly site and Torpedo include higher affinities of the Torpedo receptor for decamethonium, hexamethonium, carbamylcholine, and acetyl-β-methylcholine, but lower affinities for nicotine, atropine, and dihydro-β-erythroidine.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1471-4159.1981.tb01613.x
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