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  • 1
    Electronic Resource
    Electronic Resource
    Impact ionization model for full band Monte Carlo simulation in GaAs (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 2473-2480 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The impact ionization rate in GaAs is derived from a first principle's calculation which includes realistic band structure and a wave-vector- and frequency-dependent dielectric function. The impact ionization rate is highly anisotropic at low electron energy, while it becomes isotropic at higher energy range in which impact ionization events frequently occur. The calculated impact ionization rate is well fitted to a modified Keldysh formula with two sets of power exponents of 7.8 and 5.6, indicating very soft threshold characteristics. Using a full band Monte Carlo simulation which includes the empirical phonon scattering rate based on first principles theory, we derived the impact ionization coefficient. The calculated impact ionization coefficients agree well with available experimental data. Our isotropic model shows better agreement with reported experimental data than a previous anisotropic model, especially in low electric field. The mean energy of secondary generated electrons is found to be expressed as two sets of linear functions of the primary electron energy. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361176
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Ionized impurity scattering rate for full band Monte Carlo simulation in heavily doped n-type silicon (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 2559-2565 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Both the ionized impurity scattering rate and its angular dependence in n-type silicon were theoretically calculated using a full band model, in which a wave-vector- and frequency-dependent dielectric function was used instead of the dielectric constant of 11.7ε0. The number of grid points was determined from the relation between the wave vector and screening length to ensure the validity of the ionized impurity scattering rate. The results show that (1) the calculated overlap integral is small compared with the one used in a nonparabolic band model and (2) the screening effect is strong especially for low energy electrons. The validity of the scattering rate was tested by comparing electron mobilities obtained by a full Monte Carlo simulation with experimental data. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361122
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Determination of anisotropic elastic moduli of Zr-2.5Nb CANDU pressure tube materials (2000)
    Springer
    Journal of materials science 35 (2000), S. 1195-1200 
    Details
    ISSN: 1573-4803
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract In order to determine the elastic stiffness of Zr-2.5Nb CANDU pressure tube materials, the resonance frequencies of a rectangular parallelepiped specimen were measured and compared with the calculated resonance frequencies based on the input data of estimated stiffness of a polycrystalline Zr-2.5Nb specimen, dimensions and density. The estimated elastic stiffness was determined using its orientation distribution function measured by x-ray diffraction and the reported elastic stiffness of a zirconium single crystal. Through comparison of calculated frequencies with that measured by resonance ultrasound spectroscopy, accurate elastic stiffness has been determined by iteration and convergence processes.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1023/A:1004784320549
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    Paper (German National Licenses)
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