Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
68 (1990), S. 2127-2132
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Detailed analytical transmission electron microscopy investigations were performed on a well-known diffusion barrier system for very-large-scale integration metallization. It will be demonstrated that interfacial reactions are of great importance for the barrier mechanism. Both Ti and TiN act as diffusion barrier for the semiconductor and the metallization, respectively. For an aluminum-based metallization, TiN has a "spongelike'' function due to its ability to absorb several amounts of aluminum at elevated temperatures and therefore inhibits diffusion towards the substrate. Ti acts for silicon as a compound forming barrier according to Nicolet's classification [in Tungsten and Other Refractory Metals for Very Large Scale Integration Applications II, edited by E. K. Broadbent (Materials Research Society, Pittsburgh, 1987); pp. 19–26].
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.346568
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