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  • 1
    Electronic Resource
    Electronic Resource
    Solvent effects on crystal growth and transformation of zinc phthalocyanine (1980)
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 84 (1980), S. 3223-3230 
    Details
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/j100461a018
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  • 2
    Electronic Resource
    Electronic Resource
    Percolation in implanted Si film (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 309-312 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The conductivity degradation of implanted Si film has been characterized by nuclear-deposited energy independently of implant conditions. The conductivity decreases as a result of the carrier density change for the nuclear-deposited energy En ≤ 1 × 1023 eV/cm3, and becomes zero with mobility for En = 2.5 × 1024 eV/cm3. These results have been investigated by the percolation theory with the assistance of the Kinchin–Pease theory. The decrease in carrier density is a result of carrier trapping by vacancy-related defects. The mobility becomes zero when the nondamaged Si cluster is localized by a heavy implantation. The calculation using the site percolation is in good agreement with the experiments, where 0.428 is assumed as the percolation threshold, and 2 as the conductivity exponent. The Si displacement energy obtained is 25 eV by comparing the theory with the experiments. The experimental results suggest that microscopically conductive domains exist even in films that are macroscopically insulating.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350274
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  • 3
    Electronic Resource
    Electronic Resource
    Structure of the Mouse Glutamate Decarboxylase 65 Gene and Its Promoter (2000)
    Oxford UK : Blackwell Science Ltd.
    Journal of neurochemistry 75 (2000), S. 0 
    Details
    ISSN: 1471-4159
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: Abstract: GABA is synthesized by glutamate decarboxylase (GAD), which has two forms, GAD65 and GAD67. To elucidate the molecular mechanisms of mouse GAD65 (mGAD65) gene expression, we isolated and characterized the mGAD65 gene. The mGAD65 gene was found to be divided into 16 exons and spread over 75 kb. The sequence of the first exon and the 5′-flanking region indicated the presence of potential neuron-specific cis-regulatory elements. We used transgenic mice to examine the expression pattern conferred by a 9.2-kb promoter-proximal DNA fragment of the mGAD65 gene fused to the bacterial lacZ reporter gene. Transgenic mice showed high β-galactosidase activity specifically in brain and testis. They also showed characteristic patterns of transgene expression in olfactory bulb, cerebellar cortex, and spinal cord, a similar expression pattern to that of endogenous mGAD65. However, no transgene expression was observed in the ventral thalamus or hypothalamus, in which high mGAD65 gene expression levels have been observed. These results suggest that the 9.2-kb DNA fragment of the mGAD65 gene is associated with its tissue-specific expression and its targeted expression in GABAergic neurons of specific brain regions but that additional regulatory elements are necessary to obtain fully correct expression.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1046/j.1471-4159.2000.0751429.x
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  • 4
    Electronic Resource
    Electronic Resource
    Scanning tunneling microscope contrast of perylene-3,4,9,10-tetracarboxylic-dianhydride on graphite and its application to the study of epitaxy (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 4113-4120 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial films of perylene-3,4,9,10-tetracarboxylic-dianhydride (PTCDA) on graphite (0001) were investigated by scanning tunneling microscopy. Molecular image contrast of PTCDA was found to depend strongly upon the molecular orientation and the position on graphite. In particular, the periodic discrepancy between PTCDA and graphite lattice points results in a modulation of contrast, which can be used to determine the epitaxial relation of PTCDA relative to the substrate accurately. By analyzing this modulation of contrast, we determined two kinds of epitaxial orientation of PTCDA. These orientations have no exact commensurate relation with graphite, but every lattice point of PTCDA lies on a lattice line parallel to the a axis (or b axis) of graphite. This specific feature contributes to decreasing the interfacial energy. The contrast mechanism of adsorbed molecules is also discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357361
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  • 5
    Electronic Resource
    Electronic Resource
    Control of Zn diffusion in InP/InGaAs heterojunction bipolar transistor structures grown by metalorganic vapor phase epitaxy (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 4017-4023 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: It is known that high n+ doping in the cap layers of heterojunction bipolar transistor structures induces anomalous Zn diffusion in the base region during metalorganic vapor phase epitaxial growth. This phenomenon has been explained in terms of nonequilibrium group III interstitials generated in the n+ cap layer, which create highly diffusive Zn interstitials via the kick-out mechanism. In this article, we show that low-temperature growth (550 °C) is effective in alleviating the influence of the n+ cap layer. Due to a large time constant for the recovery of thermal point-defect equilibrium, the last-to-grow n+ cap layer cannot inject the excessive group III interstitials into the base region within a growth sequence. Under the low-temperature growth, however, the first-to-grow n+ subcollector produces group III interstitials during the whole growth sequence and thereby causes anomalous Zn diffusion. To prevent this effect, we propose interrupting the growth for a long time period (30 min) before growing the base layer, and growing the n+ subcollector at a higher temperature (600 °C). These growth techniques are shown to be effective in purging the subcollector of the undesirable group III interstitials before base-layer formation. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361830
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  • 6
    Electronic Resource
    Electronic Resource
    Photoreflectance study of thermal degradation of n-InP/p+-InGaAs heterojunctions (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 3768-3774 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The thermal stability of n-InP/p+-InGaAs heterojunctions was studied using photoreflectance (PR) spectroscopy. The PR signal amplitude from the n-InP depletion region decreased after postgrowth annealing. The reduction of the PR signal amplitude reflected an increase of recombination centers in the n-InP depletion region, which was attributed to the degradation of the adjacent carbon-doped p+-InGaAs layer. The reduction of the PR signal amplitude was more significant in samples with higher carbon doping concentration. We propose a model of the increase of the recombination centers that is consistent with our systematic experimental results, where the thermal degradation of the heavily carbon doped p+-InGaAs is taken into account. The present study shows that the PR method is quite helpful in the nondestructive diagnosis of the crystal quality of epitaxial wafers after thermal processing in heterojunction bipolar transistor device fabrication. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1352678
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  • 7
    Electronic Resource
    Electronic Resource
    Correlation between photoreflectance signal intensity and current gain of InP/InGaAs heterojunction bipolar transistor structures (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 1600-1605 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: InP/InGaAs heterojunction bipolar transistor (HBT) wafers grown by metal–organic vapor-phase epitaxy were characterized by photoreflectance (PR) spectroscopy. We found that the intensity of PR signals from the InP emitter and InGaAs collector layers of the HBT wafer decreases with increasing emitter growth temperature and shows a linear positive correlation with the HBT current gain. On the other hand, the intensity of PR signals from the n-InP single layers scarcely changes with increasing InP growth temperature. Similar tendencies in the PR intensity were also observed with changes in postgrowth annealing temperature. The change in the PR intensity of the emitter and collector layers is expected to reflect the crystal quality of the adjacent InGaAs:C base layer, which determines the HBT current gain. The present PR method is eminently suitable for the nondestructive diagnostics of the crystal quality of InP/InGaAs HBT wafers. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.373860
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  • 8
    Electronic Resource
    Electronic Resource
    Quantum transport in polycrystalline silicon "slit nano wire'' (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 624-626 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electrical conduction characteristics of polycrystalline silicon (poly-Si) "slit nano wire'' between room temperature and 2 K are reported. The slit nano wire is fabricated by the self-aligned confinement of a 100-nm-wide and 100-nm-deep trench formed in silicon substrate; the wire is 5–8 nm wide, 10–20 nm high and has grain length of around 100 nm. The resistance increases with the reduction of temperature, which might be due to the quasi-one-dimensional structure of the slit nano wire. The conductance exhibits a dip of about 30 mV below 10 K, which is attributed to a barrier height of about 1 meV at the grain boundary of the poly-Si layer.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112251
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  • 9
    Electronic Resource
    Electronic Resource
    Transport characteristics of polycrystalline-silicon wire influenced by single-electron charging at room temperature (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 828-830 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Conductance of ultrathin polycrystalline silicon wire was measured and periodic plateaus, which provide evidence of the Coulomb staircase at room temperature, are observed. This shows that single-electron charging effects are important to transport in a semiconductor system at room temperature. The very small (∼10-nm diam) silicon-grain structure is presumably playing a key role in creating the observed effects. From the temperature dependence, the electron transport is clearly dominated by the thermal emission, whose activation energy is more than 400 meV. This reveals that the treatment beyond well-established single-electron tunneling, including thermal-emission transfer, is essential to understand such high-temperature charging effects in semiconductor systems. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115457
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  • 10
    Electronic Resource
    Electronic Resource
    Suppression of abnormal Zn diffusion in InP/InGaAs heterojunction bipolar transistor structures (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 284-285 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: It is known that highly n+-doped subcollector layers in InP/InGaAs heterojunction bipolar transistor structures lead to drastically enhanced zinc diffusion in the subsequently grown base layer. We show that this abnormal zinc diffusion can be suppressed by interrupting growth before the zinc-doped layer is grown. It is speculated that this growth interruption allows excess nonequilibrium group III self-interstitials coming from the n+-doped subcollector layer to disappear before they have a chance to enhance zinc diffusion in the base layer.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.108991
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