Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
81 (1997), S. 1546-1551
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
A novel photoelectrochemical etching process for 6H– and 3C–SiC is described. This method enables n-type material to be etched rapidly (up to 25 μm/min), while a buried p-type layer acts as an etch stop. Dissolution of SiC takes place through hole–catalyzed surface dissolution. The holes are supplied either from the bulk (e.g., p-SiC) or by UV photogeneration (in n- or p-SiC). The differing flatband potentials of n- and p-type SiC in HF solutions allow the selection of a potential range for which hole current injection occurs only in n-type materials, facilitating dopant-selective etching. This process can be utilized in controlled etching of deep features, as well as in precise patterning of multilayer films. © 1997 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.363890
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