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  • 1
    Electronic Resource
    Electronic Resource
    Impurities in dielectrics and hydrogen barriers for SrBi2Ta2O9-based ferroelectric memories (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 2064-2066 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report results of systematic investigation of impurities in dielectrics and hydrogen barriers (Ti and Al2O3 films) during the integration process of SrBi2Ta2O9-based ferroelectric memories. The capacitors integrated with Ti hydrogen barriers are not electrically degraded regardless of the annealing conditions of the subdielectrics. On the contrary, electrical properties of the capacitors using Al2O3 hydrogen barriers significantly depend on the annealing temperatures for subdielectrics. It turned out that interaction of the dielectrics with plasma during sputtering of the Ti films caused fragmentation of the moisture in the dielectrics and absorption of the hydrogen in the Ti films, making annealing irrelevant. However, the alumina films blocked both hydrogen and moisture in the subdielectrics during the passivation process, resulting in dependence on the annealing temperatures. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1403664
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  • 2
    Electronic Resource
    Electronic Resource
    Hydrogen barriers for SrBi2Ta2O9-based ferroelectric memories (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 1372-1374 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on a hydrogen barrier necessary for a conventional passivation process of integrated SrBi2Ta2O9 (SBT)-based memories. The passivation process significantly degraded electrical properties of the memories, resulting from hydrogen damage in the SBT capacitors. Metallic films (Ti, TiN, and Al) were investigated as a hydrogen barrier during the passivation process. The Ti(〉500 Å) hydrogen barrier only showed the electrical properties of memories free from hydrogen damage. The formation of stable hydrides and the suppressed diffusion of hydrogen through the Ti films during the passivation processes resulted in sufficient switching polarization, low leakage current, and good reliabilities at high temperature. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1289913
    Library Location Call Number Volume/Issue/Year Availability
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    Paper (German National Licenses)
    Fulltext
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