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Atomic layer epitaxy and molecular beam epitaxy of CdTe/MnTe superlattices: A structural and optical study (1998)

Hartmann, J. M. ; Kany, F. ; Charleux, M. ; [weitere]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 84 (1998), S. 4300-4308

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ISSN: 1089-7550

Quelle: AIP Digital Archive

Thema: Physik

Notizen: Atomic layer epitaxy (ALE) is investigated together with conventional molecular beam epitaxy (MBE) for the growth of CdTe/MnTe superlattices. A systematic structural and magneto-optical study demonstrates that: (i) all Mn atoms incident on the surface get incorporated; however, when a quantity superior or equal to 1 monolayer of Mn is sent onto the surface per ALE cycle, the growth front roughens, leading to the formation of MnTe islands, (ii) optimized atomic layer epitaxy allows us to obtain at 280 °C CdTe/MnTe superlattices with a better control than in conventional MBE, but does not prevent the exchange between Cd and Mn atoms from occurring at the interfaces, (iii) low temperature ALE (200 °C and lower) seems to be a promising way of obtaining more abrupt interfaces. A precise value of the ratio of the elastic coefficients 2c12/c11 is otherwise inferred through this study for zincblende MnTe (1.12). © 1998 American Institute of Physics.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.368648

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Digitale Medien

CdTe/MgTe heterostructures: Growth by atomic layer epitaxy and determination of MgTe parameters (1996)

Hartmann, J. M. ; Cibert, J. ; Kany, F. ; [weitere]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 80 (1996), S. 6257-6265

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ISSN: 1089-7550

Quelle: AIP Digital Archive

Thema: Physik

Notizen: Atomic layer epitaxy (ALE) is investigated for the binary semiconductor MgTe. Reflection high-energy electron-diffraction studies on MgTe atomic deposition, together with x-ray diffraction, high-resolution transmission electron microscopy, and photoluminescence experiments on ALE-grown CdTe/MgTe superlattices are reported. They reveal that an autoregulated growth at 0.7±0.1 MgTe monolayer/ALE cycle can be achieved in a substrate temperature range between 260 and 300°C. New values of the zinc-blende MgTe lattice parameter, aMgTe=6.420 ±0.005 A(ring), of the ratio of the elastic coefficients 2c12c11 (MgTe)=1.06, and of the 300 K MgTe band gap, EG=3.5 eV, are obtained by correlating x-ray-diffraction and optical results. © 1996 American Institute of Physics.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.363714

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