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  • 1
    Electronic Resource
    Electronic Resource
    Optical property of GaAsP/AlGaAs strained-layer quantum well grown on GaAs-(111)B substrate (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 186-188 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: GaAs1−xPx/AlyGa1−yAs (x=0.07–0.15, y=0.3) strained-layer quantum wells have been grown on GaAs-(111)B substrates by low-pressure metalorganic vapor phase epitaxy and characterized by photoluminescence (PL) spectroscopy. Evident energy blue shifts of the excitonic transition peaks (some of them as large as 33 meV) were achieved by increasing the excitation power during the PL measurement. The large optical nonlinearity mainly due to the strain-induced piezoelectric field screened by the photoexcited carriers, is comparable to, or larger than, the reported values for a self-electro-optical effect device or other (111)-oriented strained-layer quantum well structures which are composed of InGaAs/GaAs or GaAs/GaAsP. This fact indicates that our (111)-GaAsP/AlGaAs strained-layer quantum well is a good candidate for making optoelectronic devices like optical switches and modulators. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113129
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  • 2
    Electronic Resource
    Electronic Resource
    Photoluminescence study of (111)-oriented GaAs/GaAsP strained-layer quantum well structure (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 1555-1557 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A GaAs/GaAs1−xPx (x=0.13) strained-layer quantum well structure has been grown on (111)B-oriented GaAs substrate by means of low-pressure (60 Torr) metalorganic vapor phase epitaxy and characterized by photoluminescence (PL) spectroscopy. Despite the partial relaxation of the tensile strain confined in the GaAsP barrier layers, our sample exhibits smooth surface morphology and intense optical emission. Moreover, an evident blue shift of the excitonic transition peak attributed to the screening of the strain-induced internal electric field by the photoexcited carriers, has been observed in the PL measurement.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111991
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  • 3
    Electronic Resource
    Electronic Resource
    Nonlinear resolution improvement and second-harmonic generation of a pressurized superfluid 4He acoustic microscope (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 908-910 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We observed the input power dependence of the second-harmonic generation of a 370-MHz focused acoustic beam in pressurized superfluid 4He at about 300 mK. We also measured the resolving power of a reflection mode acoustic microscope using pressurized superfluid 4He as a coupling liquid under 11 atm (anomalous dispersion region) and 21 atm (normal dispersion region). At the nonlinear power region of each pressure, the resolution was improved beyond the diffraction limit. Results of these two experiments confirmed that the higher harmonics are generated and they are converted to the fundamental as the wave propagates through the focal point. The higher harmonics play an important role in recently observed exotic nonlinear phenomenon in pressurized superfluid 4He.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.106297
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  • 4
    Electronic Resource
    Electronic Resource
    Acoustic microscope using pressurized superfluid 4He (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 1680-1683 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An acoustic microscope has been developed which makes use of pressurized superfluid helium as an acoustic coupling medium. Acoustic micrographs were taken using pure superfluid 4He under saturated vapor pressure at 0.1 K and under 25 atm at 0.1 and 1.9 K, for the frequency of 380 MHz. By pressurizing liquid 4He, the acoustic attenuation decreases, the efficiency of the antireflection coating increases, and the power level of saturation caused by nonlinearity of the superfluid 4He is raised. A good signal-to-noise ratio of imaging is thus obtained. The entire imaging instrument set is within a closed cell. The focusing mechanism is composed of two voice coils of superconducting wire. Using a servocontrol mechanism with a sensor and drive coil, Z-direction stability was better than 0.05 μm. The manipulation sensitivity is 0.5 μm/mV, and the whole stroke is about 2 mm.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.345636
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  • 5
    Electronic Resource
    Electronic Resource
    Detailed study of nonlinear wave front distortion of focused sound in superfluid4He (1995)
    Springer
    Journal of low temperature physics 98 (1995), S. 167-182 
    Details
    ISSN: 1573-7357
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract We have investigated a nonlinear phenomenon which appears in a focused sound in superfluid4He under pressure higher than 18 atm. Wave front distortion of the focused ultrasound by nonlinear effect was obtained by the Fourier transform of the transducer output as a function of the defocusing length. The wave was found to suffer discontinuous wave front distortion for the input power above a certain value. This distortion is well represented by the picture that a second wave whose phase is shifted by approx. π develops, and interferes with the original wave. The amplitude of this second wave decreases suddenly as the pressure is lowered below 18 atm and the nonlinear wave front distortion also disappears. The possible mechanism of this second wave generation are discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00753612
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