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  • 1
    Electronic Resource
    Electronic Resource
    Properties of Co-N, Co-Fe-N, and Co-Zr-N films prepared by rf sputtering in nitrogen-argon gas mixtures (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 8377-8380 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The structure and properties of Co-N, Co-Fe-N, and Co-Zr-N films, prepared by rf reactive sputtering using nitrogen and argon gases, have been studied. The resistivity and coercivity of Co-N, Co-Fe-N, and Co-Zr-N films were determined as a function of nitrogen partial pressure. It was found that the properties of Co-N and Co-Fe-N films were very similar where the properties were determined mainly by the nitride phases in these films. The resistivity of both Co-N and Co-Fe-N films increased with the increase of nitrogen pressure. The coercivity of both films decreased with an initial increase of nitrogen pressure, then increased with a further increase of pressure so that there is a region of nitrogen pressures where the coercivity is at its lowest value. The low coercivity is attributed to the formation of the Co4N phase in Co-N films and both Co4N and Fe4N phases in Co-Fe-N films. For Co-Zr-N films, resistivity first decreased with an increase of nitrogen pressure, then increased with a further increase of pressure, indicating the presence of a Zr-N phase in these films. The coercivity increased with an increase of nitrogen pressure. The Zr-N phase was not observed in the x-ray diffraction measurements due to the low concentration of Zr in these films.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353405
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  • 2
    Electronic Resource
    Electronic Resource
    As+ and Ga+ implantation and the formation of buried GaAs layers in silicon (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 4053-4059 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A buried layer of GaAs was formed in single-crystal silicon by dual implantation of extremely high doses of As+ plus Ga+ at 200 keV, followed by furnace annealing. The layer consists of polycrystalline grains with random orientation. Rapid thermal annealing, in the presence of oxygen, does not result in the formation of GaAs. Instead, Ga and As migrate to the surface to form an oxidized layer, which is separated from the underlying silicon by a thin layer of SiO2. Analysis of the samples with single implants of Ga+ or As+ indicates the oxides formed to be Ga2O3 and As2O2. Samples implanted with As+ alone have essentially dislocation loops after annealing, while those implanted with only Ga+ have mostly microtwins and precipitates. Up to 88% Ga and 62% As from the single implants and 31% As and Ga from the dual implants are lost during annealing. This is probably due to the migration of the implanted species to the surface and the subsequent formation of volatile oxides. However, such outward migration does not result in redistribution or broadening of the implanted species.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.344962
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  • 3
    Electronic Resource
    Electronic Resource
    High-quality aluminum oxide gate dielectrics by ultra-high-vacuum reactive atomic-beam deposition (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 512-514 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We demonstrate the potential for ultrathin aluminum-oxide films as alternate gate dielectrics for Si complementary metal–oxide–semiconductor technology. Films are deposited in ultrahigh vacuum utilizing atomic beams of aluminum and oxygen on Si(100) surfaces. We show device-quality Si(100)/Al2O3 interfaces with interfacial trap densities in the 1010 cm−2 eV−1 range, and with leakage current densities five orders of magnitude lower than what is observed in SiO2 insulators at the same equivalent electrical thickness. As-grown films possess an amorphous-to-microcrystalline structure, depending upon the deposition temperature, and any interfacial layers between the Si(100) and Al2O3 layer are 〈∼0.5 nm. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1373695
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  • 4
    Electronic Resource
    Electronic Resource
    Molecular-beam-deposited yttrium-oxide dielectrics in aluminum-gated metal–oxide–semiconductor field-effect transistors: Effective electron mobility (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 4169-4171 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on high effective mobilities in yttrium-oxide-based n-channel metal–oxide–semiconductor field-effect transistors (MOSFETs) with aluminum gates. The yttrium oxide was grown in ultrahigh vacuum using a reactive atomic-beam-deposition system. Medium-energy ion-scattering studies indicate an oxide with an approximate composition of Y2O3 on top of a thin layer of interfacial SiO2. The thickness of this interfacial oxide as well as the effective mobility are found to be dependent on the postgrowth anneal conditions. Optimum conditions result in mobilities approaching that of SiO2-based MOSFETs at higher fields with peak mobilities at approximately 210 cm2/V s. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1381566
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  • 5
    Electronic Resource
    Electronic Resource
    Effects of C+ implantation on the interdiffusion and resistivity of Cu/Ni/Au thin films (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 6189-6193 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of C+ implantation on the interdiffusion of Cu/Au and Cu/Ni/Au thin-film structures was investigated at temperatures ranging from 200 to 600 °C, and for different annealing times at 400 °C. For comparison, unimplanted Cu/Ni/Au and Cu/C/Ni/Au thin-film structures were also studied. The implantation of carbon ions has very little effect on the interdiffusion of Cu and Au at the temperatures investigated. For the Cu/C/Ni/Au structure, very little Cu-Au interdiffusion was observed within the temperature range studied. However, spontaneous delamination of C/Ni/Au from Cu occurred at ≥400 °C. This must be due to the poor adhesion of C to Cu which is made worse at these temperatures by the thermal expansion mismatch. X-ray diffraction analysis revealed the formation of intermetallic CuAu compounds after annealing of the implanted and unimplanted Cu/Au and Cu/Ni/Au structures. The mechanisms of diffusion are considered to be associated with this intermetallic alloying, which results in the generation of vacancies that form the diffusion paths. In the case where alloying does not occur, diffusion is therefore limited by solid solubility.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.345184
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  • 6
    Electronic Resource
    Electronic Resource
    Material dependence of property modification in ion-assisted evaporation of iron, nickel and cobalt
    Amsterdam : Elsevier
    Surface & Coatings Technology 43-44 (1990), S. 936-949 
    Details
    ISSN: 0257-8972
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1016/0257-8972(90)90033-9
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  • 7
    Electronic Resource
    Electronic Resource
    Myosin polymorphism in fish cardiac muscles
    Amsterdam : Elsevier
    Comparative Biochemistry and Physiology -- Part B: Biochemistry and 106 (1993), S. 1037-1040 
    Details
    ISSN: 0305-0491
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Biology , Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0305-0491(93)90069-H
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  • 8
    Electronic Resource
    Electronic Resource
    Diversity of native myosin and myosin heavy chain in fish skeletal muscles
    Amsterdam : Elsevier
    Comparative Biochemistry and Physiology -- Part B: Biochemistry and 106 (1993), S. 1041-1047 
    Details
    ISSN: 0305-0491
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Biology , Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0305-0491(93)90070-L
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  • 9
    Electronic Resource
    Electronic Resource
    Myosin isoenzymes of fish hearts
    Amsterdam : Elsevier
    Comparative Biochemistry and Physiology -- Part B: Biochemistry and 91 (1988), S. 359-363 
    Details
    ISSN: 0305-0491
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Biology , Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0305-0491(88)90154-X
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  • 10
    Electronic Resource
    Electronic Resource
    Myosin isoforms in selected muscle fibre types of the pond loach Misgurnus fossilis L.
    Amsterdam : Elsevier
    Comparative Biochemistry and Physiology -- Part B: Biochemistry and 107 (1994), S. 249-253 
    Details
    ISSN: 0305-0491
    Keywords: Misgurnus fossilis L ; Muscle fibre types ; Myosin isoforms
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Biology , Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0305-0491(94)90046-9
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