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  • 1
    Electronic Resource
    Electronic Resource
    Analytic model of direct tunnel current through ultrathin gate oxides (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 3000-3005 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A theoretical model for tunnel leakage current through 1.65–3.90-nm-thick gate oxides in metal-oxide-semiconductor structures has been developed. The electron effective mass in the oxide layer and the Fermi energy in the n+ poly-Si gate are the only two fitting parameters. It is shown that the calculated tunnel current is well fitted to the measured one over the entire oxide thickness range when the nonparabolic E-k dispersion relationship for the oxide band gap is employed. The electron effective mass in the oxide layer tends to increase as the oxide thickness decreases to less than 2.80 nm presumably due to the existence of compressive stress in the oxide layer near the SiO2/Si(100) interface. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.372290
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Unified analytic model of direct and Fowler–Nordheim tunnel currents through ultrathin gate oxides (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 3580-3582 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A theoretical model to predict the gate tunnel current in metal–oxide–semiconductor structures has been developed by employing the nonparabolic E-k dispersion for describing the tunneling electron momentum. The tunnel electron effective mass mox and the Fermi energy in the gate have been used to fit the calculated tunnel current to the measured one. It is shown that in the direct tunneling regime the tunnel electron effective mass mox apparently increases with decreasing oxide thickness presumably due to the reduction of Si–O–Si bond angle in the compressively strained layer near the SiO2/Si interface, while in the Fowler–Nordheim tunneling regime mox remains constant at 0.50 m0. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1330220
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    Paper (German National Licenses)
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