Library

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    Erratum: "Influence of the dopant species on radiation-induced defects in Si single crystals" [J. Appl. Phys. 87, 8389 (2000)] (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 3785-3785 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1290265
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Role of the impurities in production rates of radiation-induced defects in silicon materials and solar cells (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 1170-1178 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The present extensive systematic study of defect introduction rates as a function of boron, gallium, oxygen, and carbon concentrations by means of deep level transient spectroscopy has drawn a quite complete picture towards the identification of the dominant radiation-induced defects in Si. The radiation-induced defect EV+0.36 eV has been identified as Ci–Oi complexes. The absence of an EC−0.18 eV complex center in gallium-doped samples and the linear dependence of its introduction rates on both the boron and oxygen content fixed its identification as the Bi–Oi complex in boron-doped Si. One of the technologically important results of present study is that the gallium appears to strongly suppress the radiation induced defects, especially hole level EV+0.36 eV (Ci–Oi), which is thought to act as a recombination center as well as the dominant compensating center at EC−0.18 eV (Bi–Oi). As a result, the effects of lifetime degradation and carrier removal could be partially offset to higher radiation fluences by using Ga as a dopant instead of boron in Si space solar cells. The anneal out of the new hole level EV+0.18 eV in gallium-doped samples at around 350 °C, together with recovery of free carrier concentration, suggests that this level may act as a donor-like center which compensates free carrier concentration in gallium-doped Si. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1384855
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Recombination enhanced defect reactions in 1 MeV electron irradiated p InGaP (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 4263-4268 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Direct recombination enhanced annealing of the radiation-induced defect H2 in p InGaP has been observed by deep level transient spectroscopy (DLTS). Detailed analysis of the annealing data at zero and reverse bias shows that annealing rates are independent of the defect charge state or this defect interacts with the two bands, i.e., is a recombination center trapping alternatively an electron, then a hole. An experiment based on minority carrier capture on a majority trap by the double carrier pulse DLTS technique further supports the evidence that H2 has a large minority carrier capture cross section and is an efficient nonradiative recombination center. Recombination-enhanced defect annealing rates obeys a simple Arrhenius law with an activation enthalpy of 0.51±0.09 eV, in contrast to athermal processes observed in GaP. Detailed analysis of results reveals that the mechanism involved in the minority carrier injection annealing of the H2 defect is energy release mechanism in which enhancement is induced by the energy which is released when a minority carrier is trapped on the defect site. Finally, analysis of the depth profiles data relates that H2 acts as a donor, which partially compensates the acceptors. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1353806
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Evolution of defect complexes in silicon single crystals with heavy fluence 10 MeV proton irradiation (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 2162-2168 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated the defect structure of 10 MeV proton irradiated Czochralski-grown Si single crystals and space solar cells with boron-doped p-Si base layer using deep level transient spectroscopy measurements to characterize both vacancy interstitials and their complex-type defects and to monitor their evolution upon annealing at temperatures ≤500 °C. We have observed quite different annealing behavior of the deep levels for conduction-type converted samples (n-type) irradiated at 1×1014 p/cm2 as compared to an intermediate dose of 3×1013 p/cm2. The observed concentrations of the minority carrier level at EC−0.20 eV and the new electron level at EC−0.71 eV that can be seen in type converted samples, have been found to be enough to account for the carrier removal effects. The present study also throws light on the fact that heavy proton irradiation not only changes the structure of the device (from p to n type) but also makes the defect structure complex as compared to the simple defect structure in low dose samples. Isochronal thermal annealing after heavy irradiation provides interesting insight into defect interactions. In particular, the new observed prominent electron level (EC−0.71 eV) in type converted cells exhibits a mutual thermal transformation with hole level (EV+0.36 eV) upon annealing. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.372156
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    Thermal annealing study of 1 MeV electron-irradiation-induced defects in n+p InGaP diodes and solar cells (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 2391-2397 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The study presents detailed isothermal and isochronal annealing recovery of photovoltaic parameters in n+/p InGaP solar cells after 1 MeV electron irradiation. Correlation of the solar cells characteristics with changes in the deep level transient spectroscopy data observed in irradiated and annealed n+/p InGaP diodes and solar cells shows that the H2 (Ev+0.50 eV) and H3 (Ev+0.76 eV) defects have a dominant role in governing the minority-carrier lifetime as well as carrier removal. However, capacitance–voltage measurements indicate that other defects must also play a role in the carrier removal process. In addition, the concentration of the H2 defect is found to decay significantly as a result of room temperature storage for 40 days, suggesting that InGaP-based solar cells will display superior radiation tolerance in space. Finally, the deep donor-like-defect H2 is tentatively identified as a phosphorus Frenkel pair. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1433936
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    High-energy electron irradiation effects in C60 films (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 4620-4622 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report here the high-energy (1 MeV) electron irradiation effects on C60 films. Fourier transform infrared spectroscopy, Raman spectroscopy, and x-ray diffraction results are consistent and provide clear evidence of the nondestruction of C60 molecules upon irradiation. The presence of C60 signature peaks in the spectra of all three techniques indicates that the C60 films have not been transformed into a hitherto proposed structure of amorphous carbon for low-energy irradiation. A very short collision time mechanism has been proposed to explain the observation. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.373112
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 7
    Electronic Resource
    Electronic Resource
    Influence of the dopant species on radiation-induced defects in Si single crystals (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 8389-8392 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Observations on deep levels introduced in silicon by 1 MeV electron irradiation are reported using boron- or gallium-doped Czochralski (CZ) grown Si space solar cells with different doping concentrations, deep level transient spectroscopy analysis has been carried out to detect the radiation-induced deep levels. Present results provide evidence for new defect states in addition to those previously reported in gallium- and boron-doped Si. The combined boron and gallium data provide enough information to gain valuable insight into the role of the dopants on radiation induced defects in Si. The dominant donor-like electron level at EC−0.18 eV in boron-doped Si has not been observed in gallium-doped CZ-grown Si. A noticeable suppressing generation of the radiation-induced defects in gallium-doped Si is also observed, especially hole level EV+0.36 eV, which is thought to acts as a recombination center. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.373552
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 8
    Electronic Resource
    Electronic Resource
    Deep level analysis of radiation-induced defects in Si crystals and solar cells (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 217-223 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Deep level transient spectroscopy (DLTS) analysis of radiation-induced defects in p-type Si crystals and solar cells has been carried out to clarify the mechanism of the anomalous degradation of Si n+–p–p+ structure space cells induced by high-energy, high-fluence electron/proton irradiations. A large concentration of a minority-carrier trap with an activation energy of about 0.18 eV has been observed in irradiated p-Si using DLTS measurements, as well as the majority-carrier traps at around Ev+0.18 eV and Ev+0.36 eV, Correlations between DLTS data and solar-cell properties for irradiated and annealed Si diodes and solar cells have shown that type conversion of p-Si base layer from p-type to n-type is found to be mainly caused by introduction of the 0.18 eV minority-carrier trap center, that is, this center acts as a deep-donor center. The Ev+0.36 eV majority-carrier trap center is thought to also act as a recombination center that decreases minority-carrier lifetime (diffusion length). Moreover, origins of radiation-induced defects in heavily irradiated p-Si and generation of deep-donor defect has also been discussed. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.370698
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 9
    Electronic Resource
    Electronic Resource
    High-radiation-resistant InGaP, InGaAsP, and InGaAs solar cells for multijuction solar cells (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 2399-2401 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The radiation response of 3 MeV proton-irradiated InGaP, InGaAsP and InGaAs solar cells was measured and analyzed in comparison with those of InP and GaAs. The degradation of the minority-carrier diffusion length was estimated from the spectral response data. The damage coefficient KL for the 3 MeV proton-irradiated InGaP, InGaAsP and InGaAs was also determined. The radiation resistance increases with an increase in the fraction of In–P bonds in InGaP, InGaAsP and InGaAs. Differences in the radiation resistance of InGaP, InGaAs and InGaAs materials are discussed. Minority-carrier injection under forward bias is found to cause partial recovery of the degradation on irradiated InGaP and InGaAsP cells. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1409270
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 10
    Electronic Resource
    Electronic Resource
    Room-temperature minority-carrier injection-enhanced recovery of radiation-induced defects in p-InGaP and solar cells (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 2559-2561 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present here the direct observation of minority-carrier injection-enhanced annealing of radiation-induced defects in metalorganic chemical vapor deposition grown p-InGaP at room temperature, and the consequent recovery of radiation damage in InGaP n+-p junction solar cells. Deep level transient spectroscopy analysis shows that the main defect H2 (Ev+0.55 eV) in p-InGaP exhibits minority-carrier injection-enhanced annealing characterized by an activation energy (ΔE=0.51 eV) close to the activation energy for the recovery (ΔE=0.54 eV) of the defect responsible for diffusion length degradation in n+-p solar cells. The marked recovery of radiation damage in InGaP solar cells induced by minority-carrier injection is found to be correlated with the annihilation of the H2 defect. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.126407
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...