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  • 1
    Electronic Resource
    Electronic Resource
    Experimental study of nonlinear current-voltage behavior in undoped polycrystalline silicon (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 2419-2421 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electrical conduction data from undoped low-pressure chemically vapor deposited polycrystalline silicon thin films at room temperature and above are presented. The physical mechanisms pertinent to general current-voltage characteristics are experimentally interrogated from three different viewpoints. In the nonlinear current-voltage region, the sheet resistance Rs is shown to vary drastically depending on the device aspect ratio for given applied electrical field E¯. The nonscalability of Rs with respect to E¯, the temperature behavior of Rs, and the photoconductivity data indicate that the nonlinear current-voltage behavior cannot be attributed to field-enhanced conductivity. Other possible mechanisms responsible for observed nonlinearity are discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337154
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Analytic time domain characterization of p-i-n photodiodes: Effects of drift, diffusion, recombination, and absorption (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 2950-2958 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An analytic impulse response function of high-speed p-i-n photodiodes is given in direct time domain, incorporating the effects of drift, diffusion, recombination, and absorption. In the limit of no carrier diffusion and large excess carrier lifetime, the result reduces to the well-known theory of Lucovsky et al. [J. Appl. Phys. 35, 622 (1964)]. In this analysis the output photocurrent is obtained in terms of photogenerated carrier concentrations from the energy balance consideration. The excess carrier transport is described by a Green's function method. Additionally the internal electric field is explicitly examined. The present formulation is a generalization of Yariv's one-carrier-current model which ascribes the externally detected current to the time-varying induced charge on the electrodes.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351031
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Transconductance degradation in silicon field-effect transistors resulting from inversion layer degeneracy (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 2639-2641 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The process parameters used for fabricating a metal-oxide-silicon field-effect transistor (MOSFET) with submicron channel length are shown to lead to a degenerate channel inversion. The Fermi–Dirac statistics inherent in a dense electron gas are incorporated into the MOSFET model and compared with measured transconductance data. Only those electrons within a few kT of the Fermi level contribute to the current, while the Pauli exclusion principle prevents other electrons from participating in conduction. This distinction between conducting and nonconducting electrons in a degenerate gas can bridge in part a large discrepancy existing between observed transconductance and conventional MOSFET theories.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102861
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    Paper (German National Licenses)
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  • 4
    Electronic Resource
    Electronic Resource
    Intensity enhanced bulk photovoltaic effects in LiNbO3:Fe (1978)
    Springer
    Applied physics 17 (1978), S. 413-416 
    Details
    ISSN: 1432-0630
    Keywords: 78.20
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The saturated value of the macroscopic electric field arising from the photocurrent-induced crystal capacitance in LiNbO3: Fe is shown to increase significantly with illuminating intensity. In addition, the current-intensity characteristics is shown to depart appreciably from the linear relationship. These measurements, together with other existing data are interpreted by incorporationg in the charge transport process a new secondary photorefractive centers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00886214
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    Paper (German National Licenses)
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  • 5
    Electronic Resource
    Electronic Resource
    Feedback controlled self-excitation of optical pulses in a CW dye ring laser (1978)
    Springer
    Applied physics 15 (1978), S. 59-63 
    Details
    ISSN: 1432-0630
    Keywords: 42.55
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Feedback controlled self-excitation of optical pulses of nanosecond duration has been observed to occur rather reliably in a CW dye ring laser, oscillating in a traveling mode. These observations are described analytically by means of a direct time domain approach. It is shown that a steady-state Gaussian pulse whose time duration determined from the self consistency condition in terms of system characteristics describes accurately the observed pulse behaviors.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00896891
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    Paper (German National Licenses)
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