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  • 1
    Electronic Resource
    Electronic Resource
    Effect of an oxidized Ni/Au p contact on the performance of GaN/InGaN multiple quantum well light-emitting diodes (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 1506-1508 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Feasibility of an oxidized Ni/Au p contact on some aspects of device applications for a GaN/InGaN multiple quantum well light-emitting diode (LED) was investigated. For the oxidation of Ni/Au p contact, furnace annealing of a completely fabricated LED was performed at 600 °C for 5 min in an O2 ambient. For the case of LED with an oxidized Ni/Au system, the I–V measurements showed a reduction in series resistance of the diode by 17.2%. In addition, the optical output power of the oxidized LED was increased by a factor of 2. However, a significant degradation in reliability characteristics was observed, which might detract from the direct application of the Ni/Au oxidation process. We also conclude that the improvement of oxidized Ni/Au contact properties is mainly due to the formation of an intermediate NiO layer, rather than an enhancement in p-type activation. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1334631
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  • 2
    Electronic Resource
    Electronic Resource
    InGaN/GaN multiple quantum well light-emitting diodes with highly transparent Pt thin film contact on p-GaN (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 4464-4466 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The fabrication and characterization of an InGaN/GaN multiple quantum well light-emitting diode (LED) with a highly transparent Pt thin film as a current spreading layer are described. The room temperature electroluminescence exhibits a strong emission at 453 nm. Pt-contacted LEDs show good electrical properties and high light-output efficiency compared to Ni/Au-contacted ones. The light transmittance and the specific contact resistance of a Pt thin film with a thickness of 8 nm on p-GaN was determined to be 85% at 450 nm and 9.12×10−3 Ω cm2, demonstrating that a Pt thin film can be used as an effective current spreading layer with high light transparency. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.373092
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  • 3
    Electronic Resource
    Electronic Resource
    SiO2 aerogel film as a novel intermetal dielectric (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 1299-1304 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A low dielectric constant material for an intermetal dielectric (IMD) is imperative to reduce power dissipation, cross talk, and interconnection delay in the deep submicron device regime. SiO2 aerogel is one of the possible candidate with an inherent low dielectric constant. This article reports on the results of the successful fabrication of a SiO2 aerogel film as well as its material properties and electrical properties. Fundamental physical, chemical, and electrical material properties were evaluated for a SiO2 aerogel film before and after thermal treatment. An inherent low dielectric constant of 2.0 was realized for about 70% porosity of the SiO2 aerogel film and the leakage current density held at a level of 10−7 A/cm2. Preliminary results of the SiO2 aerogel film investigated in our study represent a very positive prospective to IMD applications. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.365902
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  • 4
    Electronic Resource
    Electronic Resource
    Nanostructured Ta-Si-N diffusion barriers for Cu metallization (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 4847-4851 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Diffusion barrier properties of nanostructured amorphous Ta-Si-N thin films with different N concentrations have been investigated in metallurgical aspects of Cu metallization. When the N content exceeds 40 at. %, the Ta-Si-N film remains in the nanostructure phase even after annealing at 1100 °C for 1 h and effectively prevents Cu diffusion after annealing at 900 °C for 30 min. The reason for the excellent thermal stability is that excess N atoms disturb the grain growth of TaSi2 phase and keep the Ta-Si-N film in the nanostructure phase during the high temperature annealing. The Ta-Si-N film with N content less than 40 at. % fails to prevent the Cu diffusion after annealing at 700 °C for 30 min. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.366346
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  • 5
    Electronic Resource
    Electronic Resource
    Effects of thermal and hydrogen treatment on indium segregation in InGaN/GaN multiple quantum wells (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 6514-6518 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of indium segregation and hydrogen on the optical and structural properties of InGaN/GaN multiple quantum wells, grown by metalorganic chemical vapor deposition were investigated. Photoluminescence and high-resolution transmission electron microscopy analysis showed that two types of indium-rich regions can be formed in the InGaN well layers. Self-assembled quantum dot-like indium-rich regions were found in the well layer grown at a normal growth temperature. These regions behaved as luminescent centers, showing a maximum indium content at the center of indium-rich region. However, randomly-distributed indium-segregated regions, which formed near the upper interface of the InGaN well layers during the subsequent high-temperature annealing process led to the degradation of the optical properties by generating defects such as misfit dislocations. The use of hydrogen during the growth interruption was found to be very effective in suppressing the formation of indium-segregated regions in the InGaN well layers. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1370368
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  • 6
    Electronic Resource
    Electronic Resource
    Temperature dependence of photoluminescence of InGaN films containing In-rich quantum dots (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 599-601 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The temperature dependence of the photoluminescence (PL) of InGaN films, grown by metalorganic chemical vapor deposition, has been investigated. A strained InGaN thin film which contains composition-fluctuated regions shows the so-called S-shaped temperature dependence of the dominant PL peak energy. However, an InGaN thick film which contains quantum dot-like In-rich regions shows a sigmoidal temperature dependence of the dominant PL peak energy, as the result of a transfer of carriers from the band-edge related luminescent centers to quantum dot-like In-rich regions. It is also found that the activation energy for the thermal quenching of PL intensity in the InGaN thick film which contains quantum dot-like In-rich regions is larger than that in the strained InGaN thin film which contains composition-fluctuated regions. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1389327
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  • 7
    Electronic Resource
    Electronic Resource
    Effect of alcohol-based sulfur treatment on Pt Ohmic contacts to p-type GaN (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 1942-1944 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of an alcohol-based (NH4)2S solution [t-C4H9OH+(NH4)2S] treatment on Pt Ohmic contacts to p-type GaN are presented. The specific contact resistance decreased by three orders of magnitude from 2.56×10−2 to 4.71×10−5 Ω cm2 as a result of surface treatment using an alcohol-based (NH4)2S solution compared to that of the untreated sample. The O 1s and Pt 4f core-level peaks in the x-ray photoemission spectra showed that the alcohol-based (NH4)2S treatment was effective in removing of the surface oxide layer. Compared to the untreated sample, the alcohol-based (NH4)2S-treated sample showed a Ga 2p core-level peak which was shifted toward the valence-band edge by 0.25 eV, indicating that the surface Fermi level was shifted toward the valence-band edge. These results suggest that the surface barrier height for hole injection from Pt metal to p-type GaN can be lowered by the surface treatment, thus resulting in a drastic reduction in specific contact resistance. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1358356
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  • 8
    Electronic Resource
    Electronic Resource
    Modeling of a GaN-based light-emitting diode for uniform current spreading (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 1903-1904 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The characteristics of the GaN/InGaN multiquantum-well light-emitting diode (LED) have been examined from the view point of uniform current spreading. By means of simple modeling, it was found that the current density and the length of the lateral current path through the transparent layer represent dominant parameters in determining uniform current spreading. In this regard, we studied the effect of current density on the reliability characteristics of the LED. We were able to significantly improve the electrical, optical, and reliability characteristics of the LED in terms of reducing the length of the lateral current path through the transparent layer. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1311819
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  • 9
    Electronic Resource
    Electronic Resource
    Thermal stability enhancement of Cu/WN/SiOF/Si multilayers by post-plasma treatment of fluorine-doped silicon dioxide (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 473-477 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of a post-plasma treatment on the dielectric property and reliability of fluorine doped silicon oxide (SiOF) film was studied. Also, the thermal stability of the Cu/WN interconnect system with SiOF interlayer dielectrics was examined by rapid thermal annealing. The surface roughness of SiOF films increased with increasing plasma treatment power due to ion bombardment effect during the plasma treatment. As the plasma treatment power increased, the dielectric constant increased from 3.16 to 3.43, while the change in the relative dielectric constant of the plasma treated films decreased in magnitude after treatment at 100 °C for 30 min in boiling water. Furthermore, the chemical properties of the plasma treated SiOF layers near the top surface tend to resemble those of thermal oxides after plasma treatment with sufficient plasma power, apparently due to the reduction in the Si–F bonding in the films. In the case of a Cu/WN/SiOF/Si multilayer structure, surface oxidation and densification due to the plasma treatment seemed to play an important role in suppressing the interdiffusion between SiOF and metal interconnects. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.369410
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