ISSN:
1662-9779
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Physics
Notes:
We report the effects of instability with gate dielectrics of pentacene thin film transistors(OTFTs) inverter circuits. We used to the UV sensitive curable resin and poly-4-vinylphenol(PVP) bygate dielectrics. The inverter supply bias is VDD= -40 V. For a given dielectric thickness and appliedvoltage, pentacene OTFTs with inverter circuits measurements field effect mobility, on-off currentratio, Vth. The field effect mobility 0.03~0.07 cm2/Vs, and the threshold voltage is -3.3 V ~ -8.8 V.The on- and off-state currents ratio is about 103~106. From the OTFT device and inverter circuitmeasurement, we observed hysteresis behavior was caused by interface states of between the gateinsulator and the pentacene semiconductor layer
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/23/transtech_doi~10.4028%252Fwww.scientific.net%252FSSP.124-126.407.pdf
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