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  • 1
    Electronic Resource
    Electronic Resource
    Hydroxyl Groups in Demineralized Bone Matrix (2007)
    s.l. ; Stafa-Zurich, Switzerland
    Key engineering materials Vol. 342-343 (July 2007), p. 381-384 
    Details
    ISSN: 1013-9826
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Human demineralized bone matrix (DBM) containing bone morphogenetic proteins(BMPs) is naturally biocompatible and can be remodeled by patients’ own bone. The majorshortcoming of many of the currently used DBM gel formulations is that they have a tendency toflow, particularly if there is continuous bleeding at the application site. In this study, thephysicochemical properties of human DBM were examined to improve the efficiency of DBMformulations. DBM remarkably showed higher water absorption than nondemineralized bonepowder after 150 min. Hydroxyl groups in DBM appeared in fourier transform infrared analysis,although hydroxyl band in nondemineralized bone powder was not observed. The results suggestedthat hydrogels such as CMC, hyaluronic acid, or poloxamer as carriers can be applied for injectableDBM products, such as gel or putty types
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/01/54/transtech_doi~10.4028%252Fwww.scientific.net%252FKEM.342-343.381.pdf
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  • 2
    Electronic Resource
    Electronic Resource
    Enhancement of the Strength and Stability of Ultraviolet-Irradiated Acellular Dermal Matrix by Adding Glucose (2007)
    s.l. ; Stafa-Zurich, Switzerland
    Key engineering materials Vol. 342-343 (July 2007), p. 337-340 
    Details
    ISSN: 1013-9826
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: In theory, Ultraviolet (UV)-generated free radicals can expedite Acellular dermal matrix(ADM) crosslinking with glucose via the formation of reactive, linear glucose molecules. The aimof this study is to maintain strength and stability of UV-irradiated ADM without the introduction ofcytotoxic chemical crosslinkers. The strength and stability changes of ADM by UV-irradiated withglucose (GLUC) were investigated under various conditions. ADM strength and stability weredetermined by tensile testing, differential scanning calorimetry (DSC), and swelling ratio. Afterexposure to UV-irradiation, ADM containing glucose revealed different mechanical propertiescompare to ADM without glucose, greater resistance to enzymatic degradation, and higher heatdenaturedbreaking loads. DSC explained that glucose-incorporated ADM sterilized by UVirradiationdecreased peak width (Tpeak-Ts) compared to one another. On the other hand, Area (J/g)and Ts increased glucose-incorporated ADM. The exposure of ADM to UV caused significantincrease in hydration, but a significant decrease in the swelling ratio compared with the nonirradiatedADM. These data strongly suggests that free radical-dependent, glucose-derivedcrosslinks provide enhanced strength and enzyme resistance in glucose-incorporated, UV-exposedADM
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/01/54/transtech_doi~10.4028%252Fwww.scientific.net%252FKEM.342-343.337.pdf
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  • 3
    Electronic Resource
    Electronic Resource
    Properties of Sterilized Human Skin Allografts by Gamma-Irradiation (2007)
    s.l. ; Stafa-Zurich, Switzerland
    Key engineering materials Vol. 342-343 (July 2007), p. 365-368 
    Details
    ISSN: 1013-9826
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: The most commonly used sterilization method of human skin allografts is ethylene oxide(EO). EO gas, however, can change the biomechanical properties of the grafts and produce toxicresidues which are harmful to the recipient. The heating method cannot be applied for sterilizationof soft tissues because of damage due to heat. The purpose of this study was to determine whether itis possible to apply gamma-irradiation for sterilization of soft tissues as well as for hard tissues
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/01/54/transtech_doi~10.4028%252Fwww.scientific.net%252FKEM.342-343.365.pdf
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  • 4
    Electronic Resource
    Electronic Resource
    Facile reduction of saturated and unsaturated carboxylic acids and their salts to aldehydes by thexylbromoborane-dimethyl sulfide (1987)
    s.l. : American Chemical Society
    The @journal of organic chemistry 52 (1987), S. 5030-5032 
    Details
    ISSN: 1520-6904
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/jo00231a037
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  • 5
    Electronic Resource
    Electronic Resource
    Resistivity and Tc measurements on YBa2(Cu1−xMx)3O7−δ films (M=Ni,Al) (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 803-805 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: YBa2(Cu1−xMx)3O7−δ films (M=Ni and Al) with up to 11 at. % dopant are fabricated on (001) SrTiO3 substrates by codeposition of Y, BaF2, Cu, and M, and then post-annealing in moist oxygen. All films are 300 nm thick. They are highly oriented with the c axis perpendicular to the substrate, and their surfaces are as smooth as for undoped YBa2Cu3O7−δ films. Tc(x) decreases with x consistent with bulk ceramic samples. The resistivity is metallic and ranges from 100 μΩ cm to 2.5 mΩ cm at 100 K. The residual resistivity ρab(0) at T=0 K, extrapolated from ρab(T) above Tc is approximately proportional to x up to 7 at. % Al films and 11 at. % Ni.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351817
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  • 6
    Electronic Resource
    Electronic Resource
    Effects of sputtering pressure on magnetic and magneto-optical properties in compositionally modulated Co/Pd thin films : 35th annual conference on magnetism and magnetic materials San Diego, California (USA) 29 Oct − 1 Nov 1990 (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 5664-5666 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated the effects of sputtering Ar gas pressure on magnetic and magneto-optical properties in compositionally modulated Co/Pd thin films. The samples were prepared by dc magnetron sputtering from 2-in.-diam Co and Pd targets by alternately exposing the substrates to targets. Sputtering Ar gas pressure was varied from 2 to 30 mTorr. All samples had same bilayer thicknesses composed of 2-A(ring)-thick Co and 9-A(ring)-thick Pd sublayers. It was observed that the intrinsic uniaxial anisotropy energy, magnetization, and polar Kerr rotation were monotonically decreased with increasing Ar gas pressures more than about 10 mTorr. Interestingly enough, the coercivity showed a thirtyfold enhancement as Ar gas pressure varied from 2 to 30 mTorr. We believe that the results are mainly ascribed to the variation of microstructure with sputtering Ar gas pressure.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347929
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  • 7
    Electronic Resource
    Electronic Resource
    Correlation between microstructure and optical properties of Ge2Sb2Te5 thin films (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 6770-6772 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The microstructure and optical properties of amorphous and crystalline Ge2Sb2Te5 thin films prepared under different sputtering conditions were investigated. The microstructure of amorphous films was modified by changing the sputtering Ar gas pressure during the deposition. The optical properties and the microstructure of the sample prepared at high Ar gas pressure were remarkably different from the samples prepared at low pressures. A strong correlation between the microstructure and optical properties of Ge2Sb2Te5 thin films was found. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371725
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  • 8
    Electronic Resource
    Electronic Resource
    The multilayer-modified Stoney's formula for laminated polymer composites on a silicon substrate (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 5474-5479 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The thermomechanical behavior of multilayer structures is a subject of perennial interest. Stoney's formula has long been one of the most important tools for understanding thermomechanical stress for single-layered structures like spin-coated polyimides or deposited metal thin film on substrates. In today's microelectronics, however, as multilayer substrates have become widely available, the "modified version" of Stoney's formula for multilayer applications is not only useful but necessary. While the majority of reports in the literature have focused on single-layer analysis, in this study, we examined an extended usage of Stoney's formula for multilayer analysis. A simple model, the multilayer-modified Stoney's formula, which predicts the stress contribution of each individual layer is proposed and verified through experiments and numerical analysis. Using various kinds of materials employed in a typical lamination-based multichip module technology, the thermomechanical behavior of the lamination-based multilayer substrates was measured by a laser profilometry during thermal cycling. The measured values were compared with calculated values using the multilayer-modified Stoney's formula. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371548
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  • 9
    Electronic Resource
    Electronic Resource
    Effects of high potential barrier on InAs quantum dots and wetting layer (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 5055-5059 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Effects of a thin AlAs layer (1 nm) with different position on InAs quantum dots (QDs) and wetting layer have been investigated by transmission electron microscopy (TEM), photoluminescence (PL), and photoreflectance (PR). The PL peak position of InAs QDs directly grown on the thin AlAs is blueshifted from that of InAs QDs grown on the GaAs layer by 171 meV mainly due to the high potential barrier and reduced dot size shown in the TEM image. As the additional GaAs layer (1 and 2 nm) is inserted on top of the AlAs layer, the PL peak position is systematically shifted toward longer wavelength with increase in the thickness. Temperature dependent PL of QD samples shows that a thin AlAs layer significantly influences the thermal activation energy. The wetting layer related peak in PR spectra is changed to lower energy with increase in the thickness of an additional GaAs layer, which is mainly caused by the reduction in the effects of the AlAs layer. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1464230
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  • 10
    Electronic Resource
    Electronic Resource
    Origin of low dielectric constant of carbon-incorporated silicon oxide film deposited by plasma enhanced chemical vapor deposition (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 2469-2473 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Dielectric properties of carbon-incorporated silicon oxide (SiOC) films deposited by plasma enhanced chemical vapor deposition (PECVD), using a bis-trimethylsilylmethane precursor, were compared with the dielectric properties of silicon oxide thermally grown in a furnace (thermal oxide) and also with oxide deposited by PECVD using a tetraethoxysilane (TEOS) precursor (PE-TEOS oxide). The electronic contribution to the dielectric constant of the three oxide films was calculated from their refractive indices measured at 632.8 nm by ellipsometry. Ionic contributions were computed from their IR reflection spectra, measured at 650–4000 cm−1, by using the Kramers–Kronig relation. The dipolar contribution was qualitatively analyzed from temperature dependence of the polarizability, on a per unit volume basis. The dielectric constant of the SiOC films, which was measured at 1 MHz, decreased from 4.2 to 2.3 as the carbon content increased from 0 to 19.6 at. %. Although there was a significant reduction of the dielectric constant, the electronic contribution was only slightly changed from 2.10 to 1.90, whereas the ionic polarization noticeably changed from 1.86 to 0.25. SiOC films showed considerable dipolar contribution when compared to thermal oxide and PE-TEOS oxide films, but the dipolar contribution in the SiOC films became negligible as the carbon content was increased. The variation of each contribution with the carbon content shows that carbon incorporation leads to a decrease in the electronic and ionic contributions. The reduction of the ionic contribution was the predominant factor leading to a decrease in the overall dielectric constant. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1388861
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