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  • 1
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 2511-2513 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: PbTiO3 thin films on the Si substrates were prepared by plasma enhanced chemical vapor deposition (PECVD) using Ti(O-i-C3H7)4, Pb(C2H5)4, and oxygen. The composition of PECVD PbTiO3 thin films was intensively influenced by the input flow rate ratio of precursors while it was independent of the deposition temperatures. As-deposited PECVD PbTiO3 thin film showed a uniform distribution of the Pb, Ti, and C component throughout the bulk of film. When an annealing process was performed at 750 °C under the O2 ambient for 1 h, the Pb/(Pb+Ti) ratio of thin films was reduced from 0.567 to 0.509.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Springer
    Journal of materials science 24 (1989), S. 76-82 
    ISSN: 1573-4803
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract The secondary phases in ZnO varistor materials, having Bi2O3, Sb2O3, MnCO3 and CoO as additives, were investigated using transmission electron microscopy with an energy dispersive X-ray spectrometer and X-ray diffractometer scans. The information about the morphology of the pyrochlore phase and its formation reaction were obtained. The pyrochlore phase is formed from the reaction between the spinel and Bi2O3 phase. Below 1200° C, the spinel phase reacts with the liquid Bi2O3 phase present at the multiple grain junction and forms the pyrochlore phase. The pyrochlore phase nucleates at the corners of multiple grain junction adjacent to the spinel grain and grows towards the centre of the grain junction.
    Type of Medium: Electronic Resource
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