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  • 1
    Electronic Resource
    Electronic Resource
    Current conduction in an implant isolated GaAs/AlGaAs heterostructure (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 6571-6575 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the current-voltage characteristics of an oxygen implant-isolated region of a GaAs/AlGaAs heterostructure between 25 and 295 K. Current conduction was dominated by bulk rather than metal contact limited effects. Bulk conduction in the implant-isolated region is due to several different mechanisms; at low electric fields a resistive current; at low temperatures and high electric fields, field ionization current proportional to V2 exp(−V0/V); and at high temperatures and high electric fields, Poole–Frenkel conduction proportional to V exp(aV1/2/rkT−qφb/rkT). The resistive current can further be separated into two components, one of which dominates at low temperatures and is proportional to V exp(−B/T1/4), and the other which dominates at high temperatures and is proportional to V exp(−Ea/kT). These results are applicable to any GaAs-based structure rendered semi-insulating by an isolation implant, and describe the current conduction characteristics from zero bias to breakdown. Such a description is critical to understanding leakage currents in GaAs/AlGaAs devices such as high-performance heterojunction bipolar transistors, field-effect transistors, and laser diodes that commonly employ implant isolation as a part of the fabrication process.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355119
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  • 2
    Electronic Resource
    Electronic Resource
    Organometallic vapor phase epitaxy of AlGaAs/GaAs heterojunction bipolar transistors using tertiarybutylarsine (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 1997-1999 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the use of tertiarybutylarsine (t-BuAsH2) for organometallic vapor phase epitaxy (OMVPE) growth of AlGaAs/GaAs heterojunction bipolar transistors (HBTs). Good dc characteristics were achieved with t-BuAsH2-grown HBT structures, including common-emitter current gains higher than 200 and 1000 for n-p-n and p-n-p structures, respectively. Near-ideal current gain dependence on the collector current density was observed, indicating that the quality of AlGaAs was suitable for high-performance HBTs. The microwave characteristics were also comparable to those of arsine-grown HBTs. These results demonstrate that t-BuAsH2 can successfully replace arsine for OMVPE growth of AlGaAs/GaAs HBT structures.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105044
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  • 3
    Electronic Resource
    Electronic Resource
    Evidence for photon recycling in InP (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 474-476 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An examination of low-temperature photoluminescence from chemically thinned InP illustrates the effect of multiple absorption and reemission of photons in bulk liquid-encapsulated Czochralski grown material. Luminescence spectra show that such photon recycling dramatically increases the nonequilibrium carrier density in the material and causes excess carrier distribution to penetrate tens of micrometers beneath the sample surface, an order of magnitude more than a diffusion length. Nonequilibrium carriers also penetrate deeper with increasing excitation levels as a consequence of more efficient radiative recombination. Although these effects have not been widely recognized, they have important consequences in the interpretation of luminescence spectra and the design of electronic and optical devices based on InP that are sensitive to minority-carrier diffusion lengths.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99448
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  • 4
    Electronic Resource
    Electronic Resource
    Distortion of band-edge luminescence in InP due to self-absorption (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 853-857 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Self-absorption is shown to dramatically distort both the intensity and spectral distribution of low-temperature band-edge photoluminescence in InP. The selective reabsorption of bound-exciton emission is shown to give rise to artifactual luminescence peaks in the low-energy portion of the band-edge region that sometimes overwhelm emission from the bound-exciton lines, resulting in dramatic spectral distortions. The severity of these distortions is highly sensitive to excitation power density and surface preparation, both of which affect the fraction of luminescence that escapes from the sample without self-absorption. These effects can easily lead to misinterpretation of luminescence spectra when self-absorption is not taken into account.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.340025
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  • 5
    Electronic Resource
    Electronic Resource
    Photoluminescence study of heat-treated InP (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 4598-4602 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Low-temperature photoluminescence is used to study optical transitions in InP which arise from moderate-temperature annealing or dielectric encapsulation. A total of seven shallow emission lines appear in annealed or encapsulated InP that are not present in unprocessed material. These transitions are easily observed in undoped substrates. They are less intense or absent in Fe-doped material, and are not seen in p-type material. It is found that dielectric capping with SiO2 enhances the formation of several transitions, while phosphosilicate glass or Si3N4 effectively suppresses their formation. Surprisingly, some of these recombination centers are found to extend many microns into the substrate after SiO2 deposition at 350 °C or after annealing at temperatures as low as ∼400 °C. These centers appear to be related to previously observed processing-induced carrier concentration changes. Possible origins of the transitions are discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.338368
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  • 6
    Electronic Resource
    Electronic Resource
    Ambient-induced surface effects on InP and GaAs (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 4209-4214 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of gas ambient changes on the photoluminescence (PL) intensity and the conductivity of chemically cleaned (100) InP and GaAs have been investigated. The room-temperature PL intensity of n-type, p-type, and Fe-doped semi-insulating InP is found to be reversibly changed by the presence of various gases at the semiconductor surface. The resistivity of thin-film InP resistors is also found to be affected by gas ambient changes, both under illumination and in the dark. These measurements show that the surface Fermi level of InP is not tightly pinned and is reversibly changed by exposure to different ambients. The PL intensity and surface conductivity of GaAs are also found to be sensitive to the gas environment, though to a lesser degree than InP. The responses of InP and GaAs are of a different nature and suggest that the surface state densities of these materials are reversibly affected by the chemisorption of oxygen. This in turn suggests that there are adsorbate-induced surface states on InP and GaAs which arise as a result of the interaction of adsorbed oxygen with the semiconductor surface and that are not associated with intrinsic semiconductor defects.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337508
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  • 7
    Electronic Resource
    Electronic Resource
    A proposed mechanism for radiative recombination through surface states on InP (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 2950-2954 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Recombination involving radiative surface states on InP has been studied in detail by low-temperature photoluminescence. A variety of surface treatments, including etching in HF-based solutions, is found to give rise to a luminescence band located between 1.1 and 1.4 eV, depending on bulk properties of the sample. A model is presented which attributes this emission band to recombination from the bulk conduction band and bulk neutral donors to surface states distributed from the valence band to at least 300 meV into the band gap. The peak emission energy depends on the occupancy of these surface states and is governed by the position of the quasi-Fermi level for holes at the surface. This model is shown to account for the properties of this luminescence band as a function of temperature, excitation power density, and substrate doping type.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.339379
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  • 8
    Electronic Resource
    Electronic Resource
    Observation of radiative surface states on InP (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 2072-2074 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have observed radiative surface recombination centers on InP by low-temperature photoluminescence. The luminescence band is observed only after etched or annealed surfaces are treated with hydrofluoric acid (HF), and is not found after rinsing in deionized water. These observations and x-ray photoemission studies of the treated surfaces indicate that the recombination centers are related to the near-surface stoichiometry or to the composition of native oxide layers. The peak energy of the transition has been studied as a function of excitation power and is found to increase from 1.392 eV at low power densities to 1.404 eV and higher power densities.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.338009
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  • 9
    Electronic Resource
    Electronic Resource
    Studies of the 1.35-eV photoluminescence band in InP (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 1363-1367 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A commonly observed luminescence band in InP near 1.35 eV has been studied in detail. The dependence of the transition energy on sample temperature and excitation power density indicates the band results from a donor-to-acceptor pair transition involving a donor level with an activation energy of ∼33 meV. Luminescence spectra from samples implanted with Si, Al, or P show that the donors responsible for the band are native defects or complexes that result from radiation damage. These results do not support previous assignments of the 1.35-eV band to transitions involving various impurities.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.339639
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  • 10
    Electronic Resource
    Electronic Resource
    Electrical properties of low-temperature-grown CaF2 on Si(111) (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 338-340 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: While epitaxial CaF2 films grown on Si(111) at temperatures above 550 °C exhibited flat capacitance-voltage (C-V) curves, suggesting a pinned CaF2/Si(111) interface, we have observed unpinned C-V curves from as-deposited epitaxial CaF2 grown at 300 °C. Our results demonstrate that C-V characteristics of CaF2/Si(111) are determined by the thermal history, rather than the crystalline quality, of the CaF2 film. Correlations among CaF2/Si interface state density, thermal stress, and atomic bonding at the interface are discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.106650
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