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  • 1
    Electronic Resource
    Electronic Resource
    X-ray photoelectron spectroscopy analysis of GaN/(0001)AlN and AlN/(0001)GaN growth mechanisms (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 5584-5593 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The mechanisms of growth of GaN on AlN and AlN on GaN via gas source-molecular beam epitaxy with NH3 as the nitrogen source have been investigated using x-ray photoelectron spectroscopy, low energy electron diffraction, and Auger electron spectroscopy. The growth of GaN on AlN at low temperatures (650–750 °C) occurs via a Stranski–Krastanov 2D→3D type mechanism with the transition to 3D growth occurring at (approximate)10–15 Å. The mechanism changes to Frank van der Merwe (FM)/layer-by-layer growth above 800 °C. The growth of AlN on GaN occurred via a FM layer-by-layer mechanism within the 750–900 °C temperature range investigated. We propose a model based on the interaction of ammonia and atomic hydrogen with the GaN/AlN surfaces which indicates that the surface kinetics of hydrogen desorption and ammonia decomposition are the factors that determine the GaN growth mechanism. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371564
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  • 2
    Electronic Resource
    Electronic Resource
    Valence band discontinuity, surface reconstruction, and chemistry of (0001), (0001¯), and (11¯00) 2H–AlN/6H–SiC interfaces (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 4483-4490 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A detailed examination of the valence band discontinuity (ΔEv) formed at the (0001), (0001¯), and (11¯00) interfaces between 2H–AlN and 6H–SiC has been conducted using x-ray and UV photoelectron spectroscopies. The ΔEv was observed to range from 0.6–2.0 eV depending on the growth direction (i.e., AlN on SiC vs SiC on AlN), as well as the crystallographic orientation, cut of the SiC substrate (i.e., on versus off axis), and SiC surface reconstruction and stoichiometry. A ΔEv of 1.4–1.5 eV was observed for AlN grown on (3×3) (0001)Si6H–SiC on-axis substrates; a ΔEv of 0.9–1.0 eV was observed for off-axis substrates with the same surface reconstruction. The values of ΔEv for AlN grown on ((square root of)3×(square root of)3)R30°(0001) 6H–SiC on-and-off-axis substrates were 1.1–1.2 eV. A larger valence band discontinuity of 1.9–2.0 eV was determined for 3C–SiC grown on (0001) 2H–AlN. Smaller values of ΔEv of 0.6–0.7 and 0.8–0.9 eV were observed for AlN grown on on-axis (0001¯)C and (11¯00)6H–SiC substrates, respectively. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371391
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  • 3
    Electronic Resource
    Electronic Resource
    Cleaning of AlN and GaN surfaces (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 5248-5260 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Successful ex situ and in situ cleaning procedures for AlN and GaN surfaces have been investigated and achieved. Exposure to HF and HCl solutions produced the lowest coverages of oxygen on AlN and GaN surfaces, respectively. However, significant amounts of residual F and Cl were detected. These halogens tie up dangling bonds at the nitride surfaces hindering reoxidation. The desorption of F required temperatures 〉850 °C. Remote H plasma exposure was effective for removing halogens and hydrocarbons from the surfaces of both nitrides at 450 °C, but was not efficient for oxide removal. Annealing GaN in NH3 at 700–800 °C produced atomically clean as well as stoichiometric GaN surfaces. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.368814
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  • 4
    Electronic Resource
    Electronic Resource
    Dependence of (0001) GaN/AlN valence band discontinuity on growth temperature and surface reconstruction (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 2086-2090 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: X ray and ultraviolet photoelectron spectroscopies have been used to determine the heterojunction valence band discontinuity at the (0001) GaN/AlN interface. Type I discontinuity values of 0.5±0.2 eV were determined for GaN grown on AlN at 650 °C and 0.8±0.2 eV for GaN grown on AlN at 800 °C. These values are critically evaluated with respect to film quality, the results of other experimental studies, and theory. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.368355
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  • 5
    Electronic Resource
    Electronic Resource
    X-ray photoelectron diffraction from (3×3) and ((square root of)3×(square root of)3)R 30° (0001)Si 6H–SiC surfaces (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 6042-6048 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High-resolution (±1°) x-ray photoelectron diffraction (XPD) patterns were obtained along high symmetry azimuths of the (3×3) and ((square root of)3×(square root of)3)R30° reconstructed (0001)Si 6H–SiC surfaces. The data were compared to XPD patterns obtained from (7×7) Si (111) as well as to models proposed for the (3×3) and ((square root of)3×(square root of)3)R30° 6H–SiC reconstructions. Forward scattering features similar to those observed from the (7×7) Si (111) were also observed from the ((square root of)3×(square root of)3)R30° 6H–SiC (0001)Si surface. Additional structures were found and attributed to the substitution of carbon atoms for silicon. Unlike (1×1) and (7×7) Si (111) surfaces, the XPD patterns of (3×3) and ((square root of)3×(square root of)3)R30° SiC (0001)Si surfaces are different which is due to the presence of an incomplete bilayer of Si on the (3×3) surface. The most significant difference with the Si system is the equivalence of the [101¯0] and [011¯0] azimuths in the (3×3) structure. These results are consistent with a faulted Si bilayer stacking sequence which was proposed based on scanning tunneling microscopy observations. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.368879
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