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  • 1
    Electronic Resource
    Electronic Resource
    Principles for the design and operation of a molecular wire transistor (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 5280-5282 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We explore theoretically the fundamental principles of design and operation of a three-terminal molecular wire transistor that consists of a single π-conjugated carbon chain molecule with thiol end groups (CnHn−2S4), self-assembled on the cleaved edge of a multilayer of alternating thin gold and insulating films. The ends of the chain bond to two outer gold layers that act as source and drain, and the chain bridges a third (inner) gold layer that acts as a gate. We show that transistor action should occur in this device if sulfur atoms are adsorbed on the surface of the gold gate. The sulfur atoms acquire charge as the gate voltage is increased, thereby enhancing the interaction between the gate and molecule and creating a strong potential barrier that hinders electron flow along the molecular wire. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1315627
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    An electrostatic model of split-gate quantum wires (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 6361-6369 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present a theoretical model of split-gate quantum wires that are fabricated from GaAs-AlGaAs heterostructures. The model is built on the physical properties of donors and of semiconductor surfaces, and considerations of equilibrium in such systems. Based on the features of this model, we have studied different ionization regimes of quantum wires, provided a method to evaluate the shallow donor density, and calculated the depletion and pinchoff voltages of quantum wires both before and after illumination. A real split-gate quantum wire has been taken as an example for the calculations, and the results calculated for it agree well with experimental measurements. This paper provides an analytic approach for obtaining much useful information about quantum wires, as well as a general theoretical tool for other gated nanostructure systems. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359108
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Electrostatic mechanism for cooling semiconductor heterostructures (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 2262-2264 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We introduce the physical concepts of an electrostatic mechanism for cooling semiconductor heterostructures. The cooling results from an adiabatic expansion that redistributes electrons among the quasi-two-dimensional subbands of a quantum well, and can be controlled by an external electric field perpendicular to the plane of the well. Under ideal conditions, the final temperature is half of the original and the dynamics of the process is completely universal and reversible. The applicability of this mechanism is verified by self-consistent calculations for AlGaAs/GaAs quantum wells at temperatures below 1 K. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.124984
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    Paper (German National Licenses)
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