ISSN:
1063-7826
Source:
Springer Online Journal Archives 1860-2000
Topics:
Electrical Engineering, Measurement and Control Technology
,
Physics
Notes:
Abstract Interest in silicon carbide as a semiconductor suitable for fabricating devices operating under extreme conditions has increased sharply in recent years. The main problem now lies in the mass production of silicon carbide single crystals with a low defect density and high crosssectional uniformity of the properties. This study involves a numerical simulation of heat and mass transfer processes during growth of SiC single crystals by the sublimation method. The results obtained make it possible to trace the effect of the growth conditions on the temperature distribution and the distribution of the main components in the vapor phase, as well as the radial profile of the rate of growth of a single crystal for different stages of growth process.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1134/1.1187063
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