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  • 1
    Electronic Resource
    Electronic Resource
    Structural and electrical properties of reactively sputtered InN thin films on AlN-buffered (00.1) sapphire substrates: Dependence on buffer and film growth temperatures and thicknesses (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 1684-1691 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An extensive investigation of InN overlayers on AlN-buffered (00.1) sapphire by reactive magnetron sputtering has been undertaken and the dependencies of several basic materials properties (film thickness, development and quality of heteroepitaxy, film morphology, and electrical transport) on such key deposition parameters such as the growth temperatures of the insulating AlN buffer layer and the InN overlayer and their thicknesses have been determined. Three prominent effects of the AlN buffer layer are (1) the stabilization of heteroepitaxial growth over a broad range of film and buffer layer growth temperatures; (2) the attainment of a higher Hall mobility (up to 60 cm2/V s) over much of the same range; and, (3) the retention of heteroepitaxial growth, higher Hall mobility, and pseudo-two-dimensional growth even in the limit of an InN layer of ∼40 A(ring). In the context of a structure-zone model, the AlN buffer layer is projected to effectively raise the growth temperature of the InN thin film. The increase in effective growth temperature is, however, insufficient to overcome low atomic and cluster mobility and to achieve single-crystal InN thin film growth.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354822
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  • 2
    Electronic Resource
    Electronic Resource
    Characterization of rf-sputtered InN films and AlN/InN bilayers on (0001) sapphire by the x-ray precession method (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 1541-1544 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thin films of InN and AlN/InN bilayers have been deposited on (0001) sapphire at a variety of substrate temperatures by reactive rf-magnetron sputtering. For all films, the c axis of the metal nitride film parallels the c axis of the sapphire substrate, and the transmission x-ray precession method has been employed to study the nature and azimuthal coherence of the in-plane heteroepitaxy. For the InN films, a mixture of textured and epitaxial grains persists up to ∼200 °C and solely epitaxial grains are observed at higher substrate temperatures, to a maximum adherence temperature of 525 °C. In contrast, the AlN/InN bilayers are epitaxial at substrate temperatures of 50 °C and above, and a uniform deposition can be retained up to 650 °C. These fundamental differences in adhesion, structure and morphology of the InN films and the AlN/InN bilayers on (0001) sapphire are also clearly reflected, for example, in the variation in electrical mobility with substrate deposition temperature.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346630
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  • 3
    Electronic Resource
    Electronic Resource
    Structural study of two products of the reaction of phosphorus pentachloride with titanium tetrachloride (1971)
    s.l. : American Chemical Society
    Inorganic chemistry 10 (1971), S. 122-132 
    Details
    ISSN: 1520-510X
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ic50095a026
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  • 4
    Electronic Resource
    Electronic Resource
    The effect of thermal annealing on GaN nucleation layers deposited on (0001) sapphire by metalorganic chemical vapor deposition (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 5367-5371 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: It has been shown by optical and x-ray measurements that GaN nucleation layers deposited at 540 °C on (0001)-oriented sapphire substrates have a measurable crystalline component, although the x-ray data and the lack of absorbance features near the direct band gap of GaN suggest that the crystallite size is very small. Upon annealing to higher temperatures, the crystallite size increases and the crystal perfection improves markedly, until at temperatures near those empirically determined to be optimum for growth of an epitaxial overlayer, it approaches that of good quality single-crystal material. Most of the recrystallization of the nucleation layer occurs during the ramp from its deposition temperature to the growth temperature of the GaN overlayer, and there appears to be no advantage to prolonged annealing at high temperatures prior to epitaxial growth. In fact, x-ray diffractometer results suggest that the nucleation layer deteriorates after 20 min at temperatures above 1015 °C, under the conditions used in this study.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355740
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  • 5
    Electronic Resource
    Electronic Resource
    Thermally annealed GaN nucleation layers and the device-quality metal organic chemical vapor deposition growth of Si-doped GaN films on (00.1) sapphire (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 7585-7587 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of epitaxial growth temperature (985–1050 °C) on the properties of Si-doped GaN layers on self-nucleated (00.1) sapphire has been investigated. Several device-related properties monotonically improve with increasing growth temperature, including (a) carrier density and (b) volume fraction of heteroepitaxial domains. However, a number of equally important device-related properties show a local maximum and include (a) optical second-harmonic generation intensity, (b) structural coherence, and particularly (c) surface morphology. The antecedents of the first class lie in increases in surface and bulk diffusion and reductions in film defect incorporation and stress at the GaN/GaN (nucleation layer)/α-Al2O3 heterointerface. The second class arises from the quite limited range over which the thermally annealed GaN nucleation layer stimulates pseudo-two-dimensional growth of the GaN overlayer.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356590
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  • 6
    Electronic Resource
    Electronic Resource
    Heterodyne detection of alternating magnetic fields with a resonating xylophone bar magnetometer (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 1472-1474 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A resonating xylophone bar magnetometer has been utilized as the mixer in a heterodyne detector for variable-frequency alternating magnetic fields. To illustrate the range of this detection scheme, examples offered include the response to low frequency, sinusoidal magnetic fields at 2, 10, and 20 Hz and to high frequency sinusoidal magnetic fields in the MHz regime. In a final example, the response of the magnetometer to the field generated by a 20 Hz square wave has been compared to the Fourier components of an idealized square wave, with no apparent loss in sensitivity and a mean deviation from expected values of less than 0.5%. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123584
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  • 7
    Electronic Resource
    Electronic Resource
    A Mössbauer investigation of melt-spun Fe60Al28B12 (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 3655-3657 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Mössbauer studies on two distinct microstructural phases produced in the same batch of melt-spun Fe60Al28B12 reveal distinctly different spectra and hyperfine field distributions. One phase is essentially an amorphous ferromagnet, whereas the other contains a large paramagnetic component together with amorphous ferromagnetic material.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.338678
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  • 8
    Electronic Resource
    Electronic Resource
    Correlation of electrical transport and magnetism in amorphous Mn-B alloys (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 3661-3663 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: X-ray scattering, magnetism, and electrical transport studies on amorphous thin films of MnxB100−x alloys with x=52 and 48 are reported. Each alloy exhibits a low-field (5 G) static susceptibility peak (10 K, x=52; 16 K, x=48) associated with a spin-glass transition. Isothermal magnetization data (6 K) are analyzed within the random anisotropy model of Chudnovsky, Saslow, and Serota. The magnetization isotherm for the x=52 alloy is dominated at high fields (〉24 kG) by field-induced moments, while for x=48 a term (αH−1/2) arising from a ferromagnet with a wandering axis prevails to the highest field strength (44 kG). Initially the electrical resistance for these Mn-B alloys decreases monotonically with decreasing temperature, reaching a minimum (Tm) at 22 K (x=52) and 45 K (x=48). For T〉Tm, a quadratic form can be effectively employed, with a negative T2 coefficient and a positive linear coefficient. The rise in resistivity for T〈Tm conforms to a −(T)1/2 law and is interpreted in terms of a disorder-induced localization transition in a correlated electron gas. Both alloys display only weakly field-dependent (to 10 kG) magnetoresistance.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.338680
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  • 9
    Electronic Resource
    Electronic Resource
    Local atomic structure in amorphous Fe-P alloys (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 4124-4126 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Amorphous alloys Fex P100−x have been fabricated by rf sputtering in the composition range 50≤x≤75. Only a-Fe75 P25 is ferromagnetic at 293 K, with its Mössbauer spectrum consisting of six broad lines. This simple spectrum differs markedly from that of c-Fe3 P. Similarly, thermogravimetric analysis yielded Tc=550 K for the amorphous phase, a value considerably lower than that of the crystalline phase (700 K). The Mössbauer spectra of the samples having x≤71 were all similar quadrupole-split doublets. Mean isomer shifts (IS) and P(H) and P(Q) distributions were determined using Window's method. The isomer shift is nearly independent of concentration in the range studied here, but differs significantly from those of the crystalline compounds c-FeP, c-Fe2 P, and c-Fe3 P. The effective quadrupole interaction is also nearly constant for 50≤x≤71, indicating a similar local Fe environment. These results contrast sharply with c-Fe2 P and c-FeP, which have different crystal symmetries and whose quadrupole interactions differ substantially both from each other and from their amorphous counterparts.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.340516
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  • 10
    Electronic Resource
    Electronic Resource
    High quality self-nucleated AlxGa1−x N layers on (00.1) sapphire by low-pressure metalorganic chemical vapor deposition (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 2024-2026 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High quality AlxGa1−xN alloy films with x〈0.4 have been prepared on self-nucleated (00.1) sapphire substrates by low-pressure metalorganic chemical vapor deposition. It has been shown that the lattice constant of the films varies linearly with alloy composition x (Vegard's law is obeyed) and that homogeneous and inhomogeneous strain and alloy clustering are minimized in these self-nucleated AlxGa1−xN films. Consistent with their reduced strain and chemical uniformity, the derived optical band gaps of these AlxGa1−xN films also show a linear dependence on alloy composition x, yielding a bowing parameter b≈0 eV. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112782
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