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  • 1
    Electronic Resource
    Electronic Resource
    Defect-enhanced electron field emission from chemical vapor deposited diamond (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 2707-2711 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Diamond samples with varying defect densities have been synthesized by chemical vapor deposition, and their field emission characteristics have been investigated. Vacuum electron field emission measurements indicate that the threshold electric field required to generate sufficient emission current densities for flat panel display applications ((approximately-greater-than)10 mA/cm2) can be significantly reduced when the diamond is grown so as to contain a substantial number of structural defects. The defective diamond has a Raman spectrum with a broadened peak at 1332 cm−1 with a full width at half maximum (FWHM) of 7–11 cm−1. We establish a strong correlation between the field required for emission and the FWHM of the diamond peak. The threshold fields are typically less than 50 V/μm and can reach as low as 30 V/μm for diamond with a FWHM greater than 8.5 cm−1. It is believed that the defects create additional energy bands within the band gap of diamond and thus contribute electrons for emission at low electric fields. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360066
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  • 2
    Electronic Resource
    Electronic Resource
    Electron field emission from ion-implanted diamond (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 1157-1159 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Diamond films and islands grown by chemical vapor deposition were implanted with boron, sodium, and carbon ions at doses of 1014–1015/cm2. This structural modification at the subsurface resulted in a significant reduction of the electric field required for electron emission. The threshold field for producing a current density of 10 mA/cm2 can be as low as 42 V/μm for the as-implanted diamond compared to 164 V/μm for the high quality p-type diamond. When the ion-implanted samples were annealed at high temperatures in order to anneal out the implantation-induced defects, the low-field electron emission capability of diamond disappeared. These results further confirm our earlier findings about the role of defects in the electron emission from undoped or p-type doped diamond and indicate that the improved emission characteristics of as-implanted diamond is due to the defects created by the ion implantation process. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114993
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  • 3
    Electronic Resource
    Electronic Resource
    Scanning Tunneling Microscopy (1990)
    Palo Alto, Calif. : Annual Reviews
    Annual Review of Materials Research 20 (1990), S. 219-244 
    Details
    ISSN: 0084-6600
    Source: Annual Reviews Electronic Back Volume Collection 1932-2001ff
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1146/annurev.ms.20.080190.001251
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  • 4
    Electronic Resource
    Electronic Resource
    Enhanced cohesion of photo-oxygenated fullerene films: A new opportunity for lithography (1993)
    Springer
    Applied physics 57 (1993), S. 299-303 
    Details
    ISSN: 1432-0630
    Keywords: 61.46 ; 33.80.Gj ; 82.50
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The irradiation of sublimed fullerene (C60 and C70) thin films with ultraviolet light in an oxygen-rich ambient has been found to lead to a substantially increased cohesive energy in the fullerene solid. The decreased solubility and lower vapor pressure of the phototransformed material enables wet (organic solvents) or dry (thermal or photon-induced sublimation) development of photo-defined negative images. One micrometer wide lines with good edge definition are demonstrated. X-ray, infrared, optical absorption, and high performance liquid chromatography reveal that photo-oxygenated C60 retains its fcc crystal structure but with a substantial fraction of the C60 molecules modified with carbonyl (C=O) bonds.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00332606
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