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1

Digitale Medien

Identification of a nickel double-acceptor state in indium phosphide (1989)

Korona, K. P. ; Hennel, A. M.

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 55 (1989), S. 1085-1087

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ISSN: 1077-3118

Quelle: AIP Digital Archive

Thema: Physik

Notizen: We present the first successful attempt to identify the Ni impurity level in indium phosphide. Ni-doped n-type InP crystals were investigated using deep level transient spectroscopy and optical absorption. A new electron trap with energy of 0.27±0.02 eV below the InP conduction band and an electron capture cross section of 10−13 cm2 was found. In the absorption spectrum a new zero-phonon line with energy of 0.57 eV was observed. We interpret these results as an observation of a Ni2+/Ni+ double acceptor level and an optical intracenter transition 2T2→2E within the Ni+(3d9) configuration. A vacuum-referred binding energy of the nickel double acceptor state in InP determined in our experiment is in good agreement with the vacuum-referred binding energies of the nickel impurity in GaAs and GaP.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.101712

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2

Digitale Medien

Exciton region reflectance of homoepitaxial GaN layers (1996)

Korona, K. P. ; Wysmol(Slashthrough accent mark)ek, A. ; Pakul(Slashthrough accent mark)a, K. ; [weitere]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 69 (1996), S. 788-790

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ISSN: 1077-3118

Quelle: AIP Digital Archive

Thema: Physik

Notizen: Reflection measurements in the exciton region of GaN homoepitaxial layers grown by metalorganic chemical vapor deposition (MOCVD) on GaN single crystals are reported. At low temperature (4.2 K) three free exciton lines have been found with energies; EA=3.4776 eV, EB=3.4827 eV, and EC=3.502 eV. The spin-orbit parameter Δso=19.7±1.5 meV and the crystal field parameter Δcr=9.3±0.3 meV have been obtained. From temperature dependence of exciton spectra the energy gap dependence has been found: E(T)=E(0)−λ/[exp(β/T)−1] (λ=0.121 eV, β=316 K). © 1996 American Institute of Physics.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.117892

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Digitale Medien

Ultrafast carrier trapping in high energy ion implanted gallium arsenide (1996)

Jagadish, C. ; Tan, H. H. ; Krotkus, A. ; [weitere]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 68 (1996), S. 2225-2227

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ISSN: 1077-3118

Quelle: AIP Digital Archive

Thema: Physik

Notizen: Time resolved photoluminescence and electrical measurements were made on MeV As, Ga, Si, and O ion implanted GaAs to doses in the range of 1×1014–5×1016 cm−2 and subsequently annealed at 600 °C for 20 min under arsine ambient. Carrier trapping times were found to decrease with increase in implantation dose for all species studied and can be shorter than 1 ps. Sheet resistance values were found to be independent of implantation dose and were of the order of 108 Ω/(D'Alembertian) for As, Ga, and O implantation and ∼2×102 Ω/(D'Alembertian) for the Si case due to its electrical activation. Conductivity activation energies of 0.67–0.69 eV were observed for As, Ga, and O ion implanted and annealed GaAs, which are close to the reported activation energy for annealed low-temperature GaAs (0.65 eV). © 1996 American Institute of Physics.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.115866

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