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  • 1
    Electronic Resource
    Electronic Resource
    Interface photoluminescence in type II broken-gap P–Ga0.84In0.16As0.22Sb0.78/p-InAs single heterostructures (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 3988-3992 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Mid-infrared photoluminescence has been observed from interface transitions in high quality, abrupt P–Ga0.84In0.16As0.22Sb0.78/p-InAs heterojunctions grown by liquid phase epitaxy from an In-rich melt. The Ga0.84In0.16As0.22Sb0.78 quaternary epitaxial layer was unintentionally doped and grown lattice matched on to a (100) oriented p-type InAs substrate, resulting in a P–p isotype heterojunction. The photoluminescence emission spectra were investigated and exhibited three pronounced emission bands in the spectral region from 0.30 to 0.68 eV; hν1=0.317 eV, hν2=0.380 eV, and hνL=0.622 eV. The emission band hν1 was identified with radiative transitions between electron and hole quantum well subbands in the semimetal channel at the P–GaIn0.03As0.10Sb/p-InAs interface, while the hν2 band originates from radiative transitions involving deep acceptor states in the InAs substrate. The high-energy recombination hνL is characteristic of the Ga0.84In0.16As0.22Sb0.78 bulk quaternary layer. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1402968
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  • 2
    Electronic Resource
    Electronic Resource
    New III–V semiconductor lasers emitting near 2.6 μm (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 3354-3356 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Lasing has been obtained near 2.6 μm in double-heterostructure InGaAs/InAlAs diode lasers grown by metalorganic vapor phase epitaxy on InAs substrates. At 80 K threshold currents are in the range of 40–200 mA for lasers of deep mesa geometry. The characteristic temperature of the temperature dependence of the threshold current T0 is 21–23 K and lasing was achieved up to 150 K in a pulsed regime. A blueshift of up to 3.0 nm with increasing current is observed. A blueshift is also observed with increasing temperature, which is attributed to refractive index change due to the strong temperature dependence of the threshold carrier density in narrow gap III–V semiconductor lasers. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361240
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  • 3
    Electronic Resource
    Electronic Resource
    Room-temperature InAsxSbyP1−x−y light-emitting diodes for CO2 detection at 4.2 μm (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 2428-2429 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: By using a graded composition InAsSbP quaternary layer grown by liquid phase epitaxy it was possible to fabricate light-emitting diodes which emit near 4.2 μm at room temperature, corresponding to the fundamental absorption of CO2 gas.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102899
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  • 4
    Electronic Resource
    Electronic Resource
    Optical switching in midinfrared light-emitting diodes (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 2821-2823 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the optical quenching of electroluminescence in midinfrared light-emitting diodes operating at 3.0 μm. The source is based on a symmetrical double heterostructure with large band offsets and is effectively switched off using coherent visible light. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1470690
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  • 5
    Electronic Resource
    Electronic Resource
    Midinfrared photoluminescence of InAsSb quantum dots grown by liquid phase epitaxy (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 3791-3793 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoluminescence in the 2–5 μm spectral region is reported from InAs1−xSbx quantum dots grown from the liquid phase at 580 °C on an InAs (100) substrate. Atomic force microscopy shows that coalesced quantum dots and then isolated quantum dots are formed with increasing Sb composition (x=0.2–0.3) and strain. The 4 K photoluminescence of the isolated and coalesced quantum dots was observed to peak in the midinfrared at 289 and 316 meV, (4.29 and 3.92 μm), respectively. These peaks are due to type II transitions and begin to quench at temperatures above 100 K as holes become thermally activated out of the quantum dot confinement potential. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1329168
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  • 6
    Electronic Resource
    Electronic Resource
    Room-temperature InAs0.89Sb0.11 photodetectors for CO detection at 4.6 μm (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 872-874 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An InAs0.89Sb0.11 photovoltaic detector that operates at room temperature in the 2.5–5 μm mid-infrared wavelength region is reported. The photodiode has an extended spectral response compared with other currently available III–V room-temperature detectors. In order to accommodate the large lattice mismatch between the InAs0.89Sb0.11 active region and the InAs substrate, a buffer layer with an intermediate composition was introduced into the structure. In this way, we obtained room-temperature photodiodes with a cutoff wavelength near 5 μm, a peak responsivity of 0.8 A/W, and a detectivity of 1.26×109 cm Hz1/2/W. These devices could be effectively used as the basis of an optical sensor for the environmental monitoring of carbon monoxide at 4.6 μm, or as a replacement for PbSe photoconductors. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1306656
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  • 7
    Electronic Resource
    Electronic Resource
    Purification of epitaxial InAs grown by liquid phase epitaxy using gadolinium gettering (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 8419-8422 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Very pure InAs epitaxial layers of high quantum efficiency have been grown by liquid phase epitaxy using Gd gettering of the growth solution. The residual carrier concentration was reduced to ∼6×1015 cm−3 and the peak photoluminescence intensity increased considerably (between 10 and 100 times) using this technique. The low-temperature (4 K) photoluminescence spectra exhibited sharp bound exciton and donor-acceptor lines. The linewidth of the exciton was measured to be only 3.8 meV which is narrower than for undoped epitaxial InAs grown by other techniques. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.370691
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  • 8
    Electronic Resource
    Electronic Resource
    Cathodoluminescence of laser-annealed erbium-implanted zinc selenide
    Amsterdam : Elsevier
    Journal of Physics and Chemistry of Solids 47 (1986), S. 719-725 
    Details
    ISSN: 0022-3697
    Keywords: Luminescence ; ion implantation ; laser annealing ; rare earths ; zinc selenide
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0022-3697(86)90087-9
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  • 9
    Electronic Resource
    Electronic Resource
    The influence of oxygen on the electrical properties of monoclinic lead phthalocyanine
    Amsterdam : Elsevier
    Journal of Physics and Chemistry of Solids 54 (1993), S. 375-380 
    Details
    ISSN: 0022-3697
    Keywords: Lead phthalocyanine ; electrical properties ; gas sensor ; oxygen acceptor level
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0022-3697(93)90272-S
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  • 10
    Electronic Resource
    Electronic Resource
    Liquid phase epitaxial growth and photoluminescence of Mn-doped InGaAs with InAs-enriched composition
    Amsterdam : Elsevier
    Journal of Crystal Growth 139 (1994), S. 238-246 
    Details
    ISSN: 0022-0248
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Chemistry and Pharmacology , Geosciences , Physics
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0022-0248(94)90172-4
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