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  • 1
    Electronic Resource
    Electronic Resource
    High-pressure high-temperature annealing of ion-implanted GaN films monitored by visible and ultraviolet micro-Raman scattering (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 2736-2741 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Visible and ultraviolet micro-Raman scattering was employed to monitor the high-pressure high-temperature annealing of Mg/P-implanted GaN films. The results illustrate the use of Raman scattering to monitor processing of GaN where fast feedback is required. Temperatures up to 1500 °C with nitrogen overpressures of 1–1.5 GPa were used during the annealing. The crystalline quality, the strain, and the free carrier concentration in the ion-implanted GaN films was monitored, averaged over the layer thickness and in a 40-nm-thin surface layer of the sample. Annealing temperatures of 1400–1500 °C were found to result in the nearly full recovery of the crystalline quality of ion-implanted GaN. No significant surface degradation occurred during the annealing. High nitrogen overpressures proved very effective in preventing the nitrogen out-diffusion from the GaN surface at high temperatures. Strain was introduced during the annealing. Changes in the free carrier concentration were studied. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.372248
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  • 2
    Electronic Resource
    Electronic Resource
    Raman mapping of epitaxial lateral overgrown GaN: Stress at the coalescence boundary (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 3656-3658 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using micro-Raman scattering spectroscopy we have investigated stress fields in epitaxial lateral overgrown (ELO) GaN fabricated by metalorganic vapor phase epitaxy using a two-step growth method. The presence of an increased compressive stress at the coalescence boundary of two adjacent wings of ELO GaN was identified. From changes in the E2 (high) phonon frequency we estimate the magnitude of the stress concentration at the coalescence boundary to be on the order of (approximate)0.07 GPa with respect to the ELO GaN wing. Mechanisms for the stress concentration at the coalescence boundary were studied. Differences in stress and crystalline quality between wing and window regions of ELO GaN were also investigated. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1400092
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  • 3
    Electronic Resource
    Electronic Resource
    SnTe-doping of GaAs grown by atomic layer molecular beam epitaxy (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 4339-4342 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using x-ray diffraction and ellipsometry we have studied the incorporation process of SnTe in GaAs for n-type doping. Combining these two techniques allows us to decide whether SnTe is incorporated pairwise, as has been proposed in the literature. We found SnTe doping to change the E1 and E1+Δ1 critical point parameters in a way similar to that previously reported for n-type Si-doped GaAs. X-ray diffraction and Hall measurements show that the free carrier concentration is more than 1/2 of the [Sn]+[Te] concentration. We thus conclude that a large proportion of SnTe is incorporated as independent Sn and Te dopant atoms. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359458
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  • 4
    Electronic Resource
    Electronic Resource
    Influence of the interface composition of InAs/AlSb superlattices on their optical and structural properties (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 811-820 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A series of five short-period (InAs)6/(AlSb)6 superlattices, grown either with AlAs-like, InSb-like, or alternating interfaces, were studied by means of x-ray diffraction, high resolution transmission electron microscopy (HRTEM), Raman spectroscopy, photoluminescence and ellipsometry. The combination of these techniques allows us to explain the pronounced differences in the optical and structural properties of both types of interfaces. In samples with an AlAs-like bottom interface x-ray, HRTEM and Raman results demonstrate the differing structural quality to be related to inhomogeneous strain relaxation and As intermixing. The energies of the critical points E0, E1 and E1+Δ1 of the samples with pure AlAs-like interfaces are shifted by more than 100 meV to higher energies with respect to those of the samples with InSb-like interfaces. These differences can be understood on the basis of the different interfacial atomic structure and strain in the samples. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359004
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  • 5
    Electronic Resource
    Electronic Resource
    High-temperature processing of GaN: The influence of the annealing ambient on strain in GaN (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 2097-2099 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using micro-Raman scattering we have investigated the influence of the annealing ambient on the high-temperature processing of GaN. Compressive strain is found in GaN layers after high-temperature processing in oxygen-containing atmospheres. This strain is significantly enhanced by the addition of water vapor to the annealing ambient, suggesting the enhanced inclusion of oxygen into GaN. Characteristic photoluminescence lines appear at 3.355 and 3.406 eV after annealing in oxygen in the presence of water vapor. No strain is introduced by high-temperature processing in nitrogen ambient, even at temperatures close to the thermal decomposition temperature and in the presence of water vapor. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.124928
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  • 6
    Electronic Resource
    Electronic Resource
    Gain characteristics of InGaN/GaN quantum well diode lasers (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 1418-1420 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated spectroscopically the gain characteristics of InGaN quantum well (QW) diode lasers. While the transparency condition can be reached at a moderate current density, the filling of localized band-edge states is a prerequisite for achieving lasing in this profoundly nonrandom alloy. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120607
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  • 7
    Electronic Resource
    Electronic Resource
    Gain spectroscopy on InGaN/GaN quantum well diodes (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 2580-2582 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated spectroscopically the emergence of gain in InGaN/GaN quantum well diodes under high current injection (〉kA/cm2). The spectral characteristics suggest that the electronic states responsible for blue laser action in this material are strongly influenced by the presence of microscopic crystalline disorder. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.118925
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  • 8
    Electronic Resource
    Electronic Resource
    Raman scattering and photoluminescence studies on Si/SiO2 superlattices (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 7903-7907 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoluminescence and Raman scattering experiments were performed on Si/SiO2 superlattices grown by radio frequency magnetron sputtering on Si, quartz and glass substrates. Increasing the Si layer thickness in the Si/SiO2 superlattice gave rise to an increased photoluminescence signal and a Raman signature for nanocrystalline Si. Annealing the superlattice at 1000 °C in nitrogen atmosphere also resulted in a significantly increased photoluminescence intensity that correlated with the formation of nanocrystalline Si in the Si/SiO2 superlattice. Relationships between the emergence of nanocrystalline Si and changes in the photoluminescence properties of Si/SiO2 superlattices are discussed. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1371001
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  • 9
    Electronic Resource
    Electronic Resource
    Thermal stability of GaN investigated by Raman scattering (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 960-962 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated the thermal stability of GaN using Raman scattering. Noninvasive optical monitoring of structural damage to GaN by high-temperature anneals in nitrogen ambient has been demonstrated. Characteristic features in the Raman spectrum identify three thermal stability regimes. Thermal damage between 900 and 1000 °C results in the appearance of a broad Raman peak between the E2 and A1(LO) phonon. For anneals at temperatures higher than 1000 °C emerging macroscopic disorder gives rise to distinct Raman modes at 630, 656, and 770 cm−1. Below 900 °C no thermal damage has been observed. The evolution of the Raman spectrum of GaN with increasing annealing temperature is discussed in terms of disorder-induced Raman scattering. We find clear indications for a reaction at the GaN/sapphire interface for anneals higher than 1000 °C. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122052
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  • 10
    Electronic Resource
    Electronic Resource
    Recombination dynamics in InGaN quantum wells (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 4194-4196 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Transient photoluminescence measurements are reported on a thin InGaN single quantum well, encompassing the high injection regime. The radiative processes that dominate the recombination dynamics, especially at low temperatures, show the impact of localized electronic states that are distributed over a large energy range (∼100 meV). We suggest that these states originate from microstructural disorder in the InGaN/GaN system. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116983
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