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  • 1
    Electronic Resource
    Electronic Resource
    The experimental study of the main technical parameters influencing the possible resolution of electron beam lithography
    Amsterdam : Elsevier
    Microelectronic Engineering 17 (1992), S. 33-36 
    Details
    ISSN: 0167-9317
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Electrical Engineering, Measurement and Control Technology
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0167-9317(92)90010-O
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  • 2
    Electronic Resource
    Electronic Resource
    Antenna array in the sound field of an arctic waveguide (2000)
    Springer
    Acoustical physics 46 (2000), S. 580-587 
    Details
    ISSN: 1562-6865
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract An antenna array placed in an arctic-type acoustic waveguide is considered. The guided sound field consists of a signal generated by a point source and an isotropic interfering noise produced by the ice cover. The array is operated in a specific regime: the output signals correspond to individual modes of the sound field. The signal received by the array is subjected to correlation processing with a finite averaging time. It is shown that, depending on the processing method, the signal-to-noise ratio can reach 40–60 dB for a realization duration of 1 min, and the quality of the signal detection is increased.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.1310384
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  • 3
    Electronic Resource
    Electronic Resource
    A numerical halynometry experiment on an acoustic path in the Arctic ocean (2000)
    Springer
    Acoustical physics 46 (2000), S. 700-704 
    Details
    ISSN: 1562-6865
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract It is shown that, in the Arctic-type deep-water waveguide, the first water mode can be used for acoustic halynometry at frequencies of about 40 Hz and higher. For this task, the stochastic sound scattering by the ice cover and the frequency dispersion of modes are the interfering factors. The data of numerical modeling are presented for the levels of the regular and stochastic components of the pseudo-noise signal and for the impulse response of the waveguide to narrow-band and broadband transmissions. To suppress the stochastically scattered component of the sound field, one can use a horizontal extended array. However, choosing the experimental site in a region with a mainly smooth ice cover may be more advantageous. It is shown that the frequency band of the received signal can be broadened by introducing a frequency-time correction of the propagation time of the first mode as a function of the sound frequency.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.1326725
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  • 4
    Electronic Resource
    Electronic Resource
    Influence of a sapphire substrate on the emission spectra of gallium nitride light-emitting diodes (1999)
    Springer
    Technical physics letters 25 (1999), S. 536-537 
    Details
    ISSN: 1090-6533
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract The emission spectra of green light-emitting diodes based on InGaN/AlGaN/GaN heterostructures revealed a weak thin doublet line at the long-wavelength edge. This line is ascribed to luminescence of residual Cr3+ impurity ions in the sapphire substrate (similar to ruby, Al2O3:Cr, doublet wavelengths 692.9 and 694.3 nm). The ions are excited by visible diode radiation which is close to the absorption bands of the Cr3+ ions. It is shown that ruby luminescence may be excited by radiation from blue and green GaN light-emitting diodes.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.1262545
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  • 5
    Electronic Resource
    Electronic Resource
    The effect of ion implantation on polymer mask resistance to ion beam etching
    Amsterdam : Elsevier
    Vacuum 38 (1988), S. 1007-1009 
    Details
    ISSN: 0042-207X
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1016/0042-207X(88)90564-7
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  • 6
    Electronic Resource
    Electronic Resource
    Changes in the luminescent and electrical properties of InGaN/AlGaN/GaN light-emitting diodes during extended operation (1999)
    Springer
    Semiconductors 33 (1999), S. 192-199 
    Details
    ISSN: 1063-7826
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract Changes in the luminescence spectra and current-voltage and capacitance-voltage characteristics of light-emitting diodes based on InGaN/AlGaN/GaN heterostructures were investigated as functions of operating time during extended use. Sample blue and green light-emitting diodes with InGaN single quantum-well active layers were examined during operating times of 102−2×103 h at currents up to 80 mA. An increase in the efficiency at the working currents (15 mA) was observed in the first stage of aging (100–800 h) followed by a decrease in the second stage. The greatest changes in the spectra were observed at low currents (〈0.15 mA). Studies of the distribution of charged acceptors in the space-charge region showed that their concentration grows in the first stage and falls in the second. Models explaining the two stages of aging are proposed: 1) activation of Mg acceptors as a result of destruction of residual Mg-H complexes, and 2) formation of N donor vacancies. A model of subthreshold defect formation by hot electrons injected into the quantum wells is discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.1187669
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  • 7
    Electronic Resource
    Electronic Resource
    Impact ionization luminescence of InGaN/AlGaN/GaN p-n-heterostructures (1998)
    Springer
    Semiconductors 32 (1998), S. 54-57 
    Details
    ISSN: 1063-7826
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract The luminescence spectra of InGaN/AlGaN/GaN p-n heterostructures with reverse bias sufficient for impact ionization are investigated. The injection luminescence of light-emitting diodes with such structures was examined earlier. A strong electric field is present in the InGaN active layer of the heterostructures, and for small reverse bias the tunneling component of the current predominates. Avalanche breakdown commences at voltages V th〉8–10 V, i.e., ∼3E g , (E g is the width of the band gap) in the absence of lightly doped structures. The luminescence spectra have a short-wavelength edge corresponding to the width of the GaN band gap (3.40 eV) and maxima in the region 2.60–2.80 eV corresponding to the maxima of the injection luminescence spectra in the active layer. The long-wavelength edge of the spectra in the region 1.7–1.8 eV may be associated with deep recombination levels. Mechanisms of recombination of the hot electron-hole plasma in the strong electric fields of the p-n heterostructures are discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.1187358
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  • 8
    Electronic Resource
    Electronic Resource
    Luminescence spectra of blue and green light-emitting diodes based on multilayer InGaN/AlGaN/GaN heterostructures with quantum wells (1997)
    Springer
    Semiconductors 31 (1997), S. 901-907 
    Details
    ISSN: 1063-7826
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract The luminescence spectra of blue and green light-emitting diodes based on InxGa1−x N/AlyGa1−y N/GaN heterostructures with a thin (2–3 nm) InxGa1−x N active layer have been investigated in the temperature and current intervals 100–300 K and J=0.01–20 mA, respectively. The spectra of the blue and green light-emitting diodes have maxima in the interavals ℏωmax=2.55–2.75 eV and ℏωmax=2.38–2.50 eV, respectively, depending on the In content in the active layer. The spectral intensity of the principal band decreases exponentially in the long-wavelength region with energy constant E 0=45–70 meV; this is described by a model that takes into account the tails of the density of states in the two-dimensional active region and the degree of filling of the tails near the band edges. At low currents radiative tunneling recombination with a voltage-dependent maximum in the spectrum is observed in the spectra of the blue diodes. A model of the energy diagram of the heterostructures is discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.1187275
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  • 9
    Electronic Resource
    Electronic Resource
    Luminescence and electrical properties of InGaN/AlGaN/GaN light emitting diodes with multiple quantum wells (1999)
    Springer
    Semiconductors 33 (1999), S. 429-434 
    Details
    ISSN: 1063-7826
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract Luminescence spectra of light-emitting diodes based on InGaN/AlGaN/GaN heterostructures with multiple quantum wells are studied for currents in the range J=0.15 µA-150 mA. The comparatively high quantum efficiency for low J(J max=0.5–1 mA) is a consequence of a low probability for the nonradiative tunnel current. The current-voltage characteristics J(V) are studied for J=10−12–10−1 A; they are approximated by the function V=ϕk+mkT· [1n(J/J 0)+(J/J 1)0.5] + J · R s. The portion of V∞(J/J 1)0.5 and measurements of the dynamic capacitance indicate that i-layers adjacent to the active layer play an important role. The spectra are described by a model with a two-dimensional density of states with exponential tails in multiple quantum wells. The rise in T with increasing J is determined from the short-wavelength decay of the spectrum of the blue diodes: T=360–370 K for J=80–100 mA. An emission band is observed at 2.7–2.8 eV from green diodes at high J; this band may be explained by phase separation with different amounts of In in the InGaN.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.1187707
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  • 10
    Electronic Resource
    Electronic Resource
    Use of accelerated light ions for elemental analysis of natural objects (1989)
    Springer
    Atomic energy 67 (1989), S. 837-842 
    Details
    ISSN: 1573-8205
    Source: Springer Online Journal Archives 1860-2000
    Topics: Energy, Environment Protection, Nuclear Power Engineering , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01126137
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