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  • 1
    Electronic Resource
    Electronic Resource
    Laue x-ray diffraction from heterostructures: CdF2–CaF2 superlattices on Si(111) (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 1563-1565 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: X-ray diffraction measurements have been carried out on epitaxial superlattices (SLs) in symmetric Laue geometry. High quality pseudomorphic CdF2/CaF2 SLs on Si(111) have been used as samples. Satellites, due to periodic variations of structural factor value, are revealed at ω-scanning rocking curves. A comparison of information about SL provided by diffraction in Bragg and Laue geometries is presented. The possibility of direct determination of SL structural parameters is discussed. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.118617
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  • 2
    Electronic Resource
    Electronic Resource
    Broadening of submonolayer CdSe sheets in CdSe/ZnSe superlattices studied by x-ray diffraction (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 373-375 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present x-ray diffraction studies of a CdSe distribution profile along the growth direction in CdSe/ZnSe submonolayer superlattices (SLs) grown by molecular beam epitaxy. The performed theoretical simulations show that the shape of both (004)- and (002)-reflection rocking curves is very sensitive to the vertical CdSe distribution around the intended deposition yplanes. In particular, broadening of the CdSe submonolayer insertions results in a decrease in SL (±1) and (±2) satellite intensities. Comparison of the simulations and experimental data allows us to conclude that CdSe sheets in the as-grown SL samples are asymmetrically broaden up to 5 monolayers. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.124379
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  • 3
    Electronic Resource
    Electronic Resource
    X-ray Triple-Crystal Diffractometry and Transmission Electron Microscopy Characterization of Defects in Lattice-Mismatched Epitaxic Structures (1995)
    Copenhagen : International Union of Crystallography (IUCr)
    Applied crystallography online 28 (1995), S. 700-706 
    Details
    ISSN: 1600-5767
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Geosciences , Physics
    Notes: X-ray triple-crystal diffractometry has been applied to heterostructures with a misfit of lattice parameters in the interfaces. Si1 − xGex/Si compositions as well as GaSb layers strongly mismatched to GaAs substrates have been studied. By use of various scans in both the Bragg and Laue geometries, the data are presented either as two-dimensional maps in the scattering plane or as the intensity distribution along the diffraction vector. The structural parameters of the layers were determined from a detailed analysis of the diffraction patterns. The X-ray diffractometry results are supported by a transmission electron microscopy study.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1107/S0021889894008095
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  • 4
    Electronic Resource
    Electronic Resource
    Low-temperature photoluminescence of heavy-ion-implanted InGaP solid solutions (1998)
    Springer
    Technical physics letters 24 (1998), S. 690-691 
    Details
    ISSN: 1090-6533
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract The photoluminescence spectra of samples of the solid solution In(0.5)Ga(0.5)P before and after implantation of high-energy nitrogen ions to doses of 1011−5×1012 cm−2 shows that the photoluminescence of the implanted (and annealed) samples may be the result of the formation of essentially one-dimensional semiconductor structures along the individual ion tracks.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.1262246
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  • 5
    Electronic Resource
    Electronic Resource
    Measurement of the differential and integral distribution of diffuse x-ray scattering intensity from defects in thin strained layers (1997)
    Springer
    Physics of the solid state 39 (1997), S. 1052-1056 
    Details
    ISSN: 1063-7834
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract Double-and triple-crystal diffractometry have been used to study structural perfection of a ∼1 µm-thick Ga1−x InxSb1−y Asy epitaxial film (x=0.9, y=0.8) on GaSb. It is shown that scattering from samples of this system can be divided into coherent and diffuse. The arrangement of reciprocal-lattice points of the film and substrate in the two-dimensional intensity distribution for asymmetrical reflections argues for the absence of elastic-strain relaxation. No dislocation networks are formed, and the diffuse scattering is produced by Coulomb-type defects. Localization of diffuse scattering in reciprocal space suggests that these defects reside in the epitaxial film. The diffuse-scattering distribution in asymmetrical reflections is shown to be anomalous; namely, it extends in a direction parallel to the surface and is split into two maxima. Schemes have been proposed and realized for measuring integral distributions of diffracted intensity along the surface and perpendicular to it, and their potential for studying diffuse scattering from defects is explored.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.1130155
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  • 6
    Electronic Resource
    Electronic Resource
    Structural studies of nanoporous carbon produced from silicon carbide (1999)
    Springer
    Physics of the solid state 41 (1999), S. 808-810 
    Details
    ISSN: 1063-7834
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract X-ray diffraction and small-angle scattering study of nanoporous carbon samples prepared from polycrystalline α SiC and single-crystal 6H SiC is reported. The distribution function of carbon nanoclusters in size was found. In α SiC samples, the small size (10–12 Å) of nanoclusters is combined with their high size uniformity. Graphite-like nanoclusters 30–60 Å in size were found in samples of both types. In 6H SiC samples, such clusters make up a notable fraction of the volume. The experimentally observed structural anisotropy of the samples is discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.1130879
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  • 7
    Electronic Resource
    Electronic Resource
    On fractal nature of the structure of nanoporous carbon obtained from carbides (2000)
    Springer
    Physics of the solid state 42 (2000), S. 1176-1181 
    Details
    ISSN: 1063-7834
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract The curves describing small-angle x-ray scattering at npor-C nanoporous carbon samples obtained from polycrystalline α-SiC, TiC, and Mo2C and a 6H-SiC single crystal have been analyzed. An algorithm is developed for taking into account the corrections to experimental curves for the intensity of the primary beam transmitted through the sample and the height of the inlet slit in these measurements. Two systems of nanoclusters observed in the npor-C structure differ in the type of stacking of structural elements: small-scale mass fractals of a dimension 1〈D 2〈3 and a size L 2=50–90 Å, which depend on the type of the initial carbide, and large-scale nanoclusters having a size L 1〉550 Å. In most samples, large-scale nanoclusters can be regarded as objects with a fractal surface and a dimension 2〈D 1〈13, which also depends on the type of the initial carbide. Large-scale nanoclusters in npor-C obtained from Mo2C prove to be mass fractals with a dimension D 1〉2. Peculiarities of the structure formation of nanoporous carbon obtained from various carbides are discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.1131336
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  • 8
    Electronic Resource
    Electronic Resource
    Internal microstrain and distribution of composition and cathodoluminescence over lapped AlxGa1−x N epilayers on sapphire (2000)
    Springer
    Semiconductors 34 (2000), S. 1248-1254 
    Details
    ISSN: 1063-7826
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract Structural properties and spatial inhomogeneity of MOCVD-grown AlxGa1−x N layers on (0001) sapphire substrates were studied. A nonuniform distribution of Al across the epilayer was observed in layers grown at constant flux rates of precursors. The model of compositionally graded layer formation is proposed on the basis of cathodoluminescence and X-ray data. It is established that homogeneous samples can be obtained by increasing the flux rate of trimethylaluminum at the initial stage of epilayer growth compared with that in all further stages. Lowering the growth rate reduces strain in epitaxial AlxGa1−x N layers. The influence of strain on the luminescence properties of the layers is discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.1325417
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  • 9
    Electronic Resource
    Electronic Resource
    Structural study of nanoporous carbon produced from polycrystalline carbide materials: Small-angle x-ray scattering (1999)
    Springer
    Physics of the solid state 41 (1999), S. 1359-1363 
    Details
    ISSN: 1063-7834
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract An x-ray small-angle scattering study is reported of the structure of nanoporous carbon prepared by chlorinating carbide compounds having different crystal structures (SiC, TiC, Mo2C). The measurements were carried out both in reflection and transmission. The angular dependences of the scattering intensity obtained are treated as a result of scattering from nanoparticles of different size. By unfolding the experimental curves into components corresponding to particles with different gyration radii R g, scatterer distribution functions in gyration radius m(R g) were found. It is shown that, irrespective of the type of the starting carbide, particles with R g∼5 Å make up the largest fraction in porous carbon. Samples prepared from different carbides differ in the degree of nanoparticle uniformity in size. The most uniform in size are nanoparticles in the samples prepared from SiC, in which the average value R g av 〈6 Å. Nanoparticles in the porous carbon produced from Mo2C are about twice larger.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.1130998
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  • 10
    Electronic Resource
    Electronic Resource
    X-ray diffraction studies of silicon implanted with high-energy erbium ions (1997)
    Springer
    Physics of the solid state 39 (1997), S. 759-762 
    Details
    ISSN: 1063-7834
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract Silicon crystals after implantation of erbium ions with energies in the range 0.8–2.0 MeV and doses in the range 1×1012–1×1014 cm−2 have been studied by two-and three-crystal x-ray diffraction. Three types of two-crystal reflection curves are observed. They correspond to different structural states of the implanted layers. At moderate doses (1×1012–1×1013 cm−2) a positive strain is observed, due to the formation of secondary radiation defects of interstitial type. An increase of the implantation dose is accompanied by the formation of an amorphous layer separating the bulk layer and a thin monocrystalline surface layer. At an implantation dose of 1×1014 cm−2 the monocrystalline surface layer is completely amorphized. Parameters of the implantation layers are determined. A model of the transformation of structural damage is discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.1129963
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