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  • 1
    Electronic Resource
    Electronic Resource
    Liquid phase epitaxial regrowth on sulfide-passivated Ga1−xAlxAs (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 970-972 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We demonstrate that Na2S passivation allows liquid phase epitaxial regrowth of Ga0.5Al0.5As upon Ga1−xAlxAs (0.3≤x≤0.8) after air exposure. Large aluminum concentrations require concentrated (2.4 M) sulfide solutions. We have also studied the Ga1−xAlxAs etching rate by Na2S. For large sulfide concentrations or small aluminum concentrations, the etching process stops after some time. These two phenomena are correlated because both of them require the presence on the surface of a stable protective layer. This can be understood by assuming the existence at the surface of two competing mechanisms: etching and passivation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109861
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  • 2
    Electronic Resource
    Electronic Resource
    Optical anisotropy of the (100) surfaces in AlxGa1−x As ternary compounds (2000)
    Springer
    Physics of the solid state 42 (2000), S. 981-986 
    Details
    ISSN: 1063-7834
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract The reflectance anisotropy spectra of the clean (100) surfaces of the AlxGa1−x As ternary compounds at aluminum concentrations 0≤x≤0.5 have been measured and thoroughly studied. In the spectral range from 1.6 to 3.5 eV, the signal caused by the optical transitions in the arsenic dimers dominates in the spectra of the clean arsenic-terminated GaAs surfaces. For the ternary compounds, an increase in the aluminum concentration brings about the broadening of this signal and its shift toward the low-energy range. This is explained by the appearance of additional signals associated with the optical transitions in the nonequivalent arsenic dimers, in which a part of the Ga atoms in the bulklike bonds is replaced by the Al atoms. An increase in the number of the substituted gallium atoms leads to a decrease in the energy of optical transition in the dimer. The fundamental optical transition energies are determined for the nonequivalent dimers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.1131323
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    Paper (German National Licenses)
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