ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We present a study of the main features of a two-dimensional hole gas confined near a Si–SiO2 heterointerface. Starting from the framework of the effective mass theory, we were able to separate the Luttinger Hamiltonian into two 3×3 matrices using a semiaxial approximation and still retaining the warped shape of the isoenergetic surfaces in the kx−ky plane and the coupling of heavy, light, and split-off holes. This allows us to solve iteratively and simultaneously the Schrödinger and Poisson equations in the case of an inversion layer of holes in a P-channel metal–oxide–semiconductor structure for different applied gate biases. We have obtained the energy subbands and the main characteristics of the inversion layer. The form of the energy subbands suggests that the use of parabolic bands should be seriously questioned, and that even the use of a unique effective mass in each subband is not a realistic assumption. Furthermore, our results show that the character of the subbands becomes mixed as k(parallel) separates from zero, and that the complete dispersion characteristics must be considered in hole studies. © 1999 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.370749
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