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  • 1
    Electronic Resource
    Electronic Resource
    Highly oriented layers of the three-dimensional semiconductor CdTe on the two-dimensional layered semiconductors MoTe2 and WSe2 (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 5718-5722 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The II–VI semiconductor CdTe was sequentially deposited onto the (0001) van der Waals surfaces of the layered compound semiconductors MoTe2 and WSe2 by molecular beam epitaxy. Growth could only be achieved after deposition of a nucleation layer of CdTe at room temperature. After nucleation subsequent deposition steps followed at increased substrate temperatures (T=170–370 °C) in order to increase the crystalline quality of the films. The deposited films were investigated after each growth step by low energy electron diffraction and photoelectron spectroscopy. The diffraction pattern indicates a facetting of the (111) oriented film surfaces. From photoemission data we exclude interface reactions between substrate and film material. Transmission electron microscopy was used to examine the film morphology after the UHV experiments. The mean diameter of the film crystallites is 200–400 A(ring). © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363624
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  • 2
    Electronic Resource
    Electronic Resource
    Partial density of states in the CuInSe2 valence bands (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 7806-7809 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The valence band spectra of a vacuum cleaved CuInSe2 (011) surface were measured with synchrotron radiation at photon energies between 16 and 95 eV. The strong dependence of the photoionization cross section of atomic levels between 28 and 60 eV is used to divide the valence band emissions into contributions from Se 4p and Cu 3d states in order to map the respective partial density of states. The derived partial density of Cu 3d states to the total valence band density of states is around 50% in the upper part of the valence band and about 75% at its maximum corresponding to non-bonding Cu d states. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.365390
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  • 3
    Electronic Resource
    Electronic Resource
    Chemical interaction of Na with cleaved (011) surfaces of CuInSe2 (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 5039-5043 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: To study the beneficial effect of sodium-containing substrate material on the photovoltaic properties of thin-film CuInSe2 solar cells the chemical interaction of Na with CuInSe2 has been investigated by synchrotron excited photoelectron spectroscopy. A clean CuInSe2 (011) surface was prepared by cleaving an oriented single crystal in UHV. The cleaved surface exhibits an electron affinity of χ≈4.6 eV. The Se 3d level shows a surface core level shift of −0.4 eV. Na was sequentially deposited in UHV in small steps from a commercial dispenser source. Initially ionized Na adsorbs on the surface leading to a shift of the surface Fermi level by 0.3 eV closer to the conduction band. Removal of Cu from the surface is observed. For higher Na deposition a chemical reaction of Na with the CuInSe2 surface occurs leading to the formation of metallic indium and Na2Se. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363549
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  • 4
    Electronic Resource
    Electronic Resource
    Formation and electronic properties of the CdS/CuInSe2 (011) heterointerface studied by synchrotron-induced photoemission (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 731-738 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The heterointerface p-CuInSe2/CdS was investigated by soft x-ray photoelectron spectroscopy. CdS was deposited sequentially in steps onto CuInSe2 (011) cleavage planes at room temperature (RT) and at elevated temperatures ((approximately-greater-than)120 °C). At RT a nonreactive interface to cubic CdS is formed. The valence band and conduction-band discontinuities are determined to be 0.8 and 0.7 eV, respectively. A band bending of 0.9 eV is deduced for the p-type substrate. Annealing to temperatures above 120 °C leads to the formation of a CuxS reactive layer at the interface. As a consequence the valence-band offset and band bending is found to be considerably reduced. The experimentally determined band energy diagram is in agreement with heterojunctions of zincblende-type semiconductors, and its consequences for solar cells are discussed. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359583
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  • 5
    Electronic Resource
    Electronic Resource
    Band lineup between CdS and ultra high vacuum-cleaved CuInS2 single crystals (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 1299-1301 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The interface formation between vacuum evaporated CdS and ultrahigh vacuum-cleaved CuInS2 single crystals has been studied by synchrotron excited photoelectron spectroscopy. The valence band discontinuity is determined directly from valence band difference spectra to be ΔEV=0.6 (±0.1) eV. This value is significantly smaller than for other preparation conditions given in the literature and evidently not suitable for solar cell applications. The similarity to observations at the CdS/CuInSe2 interfaces suggests that neutrality levels play a dominant role in establishing the band lineup at interfaces containing chalcopyrite semiconductors. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.118517
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  • 6
    Electronic Resource
    Electronic Resource
    Van der Waals epitaxy of three-dimensional CdS on the two-dimensional layered substrate MoTe2(0001) (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 555-557 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial films of Wurtzite CdS in (0001) orientation have been grown on MoTe2 (0001) substrates in spite of a lattice mismatch of 15%. The film growth was in situ monitored by soft x-ray photoelectron spectroscopy and low energy electron diffraction. The interface is found to be nonreactive and atomically abrupt. The CdS overlayer tends to grow in three-dimensional clusters (Volmer–Weber growth mode).
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112294
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