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  • 1
    Electronic Resource
    Electronic Resource
    Electromagnetic modes and prism-film coupling in anisotropic planar waveguides of epitaxial (101) rutile thin films (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 7823-7830 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report optical waveguiding in single-crystal, epitaxial (101) oriented rutile (TiO2) thin films grown on (112¯0) sapphire (α-Al2O3) substrates using the metal-organic chemical vapor deposition technique. The electromagnetic field distributions and propagation constants for asymmetric planar waveguides composed of an anisotropic dielectric media applicable to these films are derived. Modifications to the prism-film coupling theory for this anisotropic case are also discussed. By application of this model to (101) oriented rutile thin films, we directly obtain values of the ordinary and extraordinary refractive indexes, n0 and ne, of the rutile thin films as well as film thicknesses. We obtain typical values of the refractive indexes (n0=2.5701±0.0005; ne=2.934±0.001) near to those for bulk rutile single crystals indicating the exceptional quality of these films.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353931
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  • 2
    Electronic Resource
    Electronic Resource
    Piezoelectrically-induced switching of 90° domains in tetragonal BaTiO3 and PbTiO3 investigated by micro-Raman spectroscopy (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 4481-4486 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Domain switching of 90° ferroelectric domains in tetragonal BaTiO3 and PbTiO3 is induced by the application of stress along specific crystallographic axes. For BaTiO3, single-domain crystals are obtained from twinned specimens by the application of ∼1.1 MPa of stress parallel to the a axis and twin boundaries are induced by application of ∼0.22 MPa of stress parallel to the c axis. Similar piezoelectrically-induced domain switching was observed in PbTiO3 at elevated temperature. We observed the rotation of the crystallographic axes associated with domain switching via micro-Raman spectroscopy. These results were consistent with optical microscope images of the domain switching which demonstrates the usefulness of micro-Raman spectroscopy for the study of ferroelectric domain structures. A phenomenological treatment of domain switching in a piezoelectrically-coupled system is described.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350792
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  • 3
    Electronic Resource
    Electronic Resource
    Raman scattering and x-ray diffractometry studies of epitaxial TiO2 and VO2 thin films and multilayers on α-Al2O3(112¯0) (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 2841-2847 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial thin films of TiO2 and VO2 single layers and TiO2/VO2 multilayers were grown on (112¯0) sapphire (α-Al2O3) substrates using the metalorganic chemical vapor deposition technique and were characterized using Raman scattering and four-circle x-ray diffractometry. X-ray diffraction results indicate that the films are high quality single crystal material with well defined growth plane and small in-plane and out-of-plane mosaic. Single-layer films are shown to obey the Raman selection rules of TiO2 and VO2 single crystals. The close adherence to the Raman selection rules indicates the high degree of orientation of the films, both parallel and perpendicular to the growth plane. Selection rule spectra of two and three layer TiO2/VO2 multilayers are dominated by the VO2 layers with only minimal signature of the TiO2 layers. Due to the low band gap of semiconducting vanadium dioxide, we attribute the strong signature of the VO2 layers to resonant enhancement of the VO2 Raman component accompanied with absorption of the both the incident and scattered laser light from the TiO2 layers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353036
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  • 4
    Electronic Resource
    Electronic Resource
    Effect of annealing on superconductivity of Pb-doped Bi-Sr-Ca-Cu-O single-crystal superconductors (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 1693-1695 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The microstructure of high quality Pb-doped Bi2Sr2CaCu2Ox single crystals grown by the flux technique has been studied by transmission electron microscopy (TEM). The single crystals have a superconducting transition temperature (Tc) of about 90 K as grown; Tc drops to about 83 K after annealing in air at 600 °C. TEM results show that the as-grown crystals exhibit twinning. The twin boundaries were found to be parallel to the (100) and (010) lattice planes. However, upon annealing the twin structure disappeared. This microstructure change is discussed in terms of a possible cause for the Tc decrease in the annealed crystals.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104139
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  • 5
    Electronic Resource
    Electronic Resource
    Transport critical current density in Bi2Sr2CaCu2Ox single crystals (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 2358-2360 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The transport crystal current density Jc has been measured in Bi2Sr2CaCu2Ox single crystals. With a voltage criterion of 1.0 μV/cm, current density measurements yield Jc values ranging from 300 to 1000 A/cm2 at 77 K and zero field, depending upon crystal quality. The crystals are grown by using a flux method and have a typical size of approximately 10×4×1.5 mm. X-ray diffraction, scanning electron microscopy, electrical resistivity, and magnetization shielding data are reported.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101527
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  • 6
    Electronic Resource
    Electronic Resource
    Epitaxy-induced phase of near-stoichiometry PbTiO3 films prepared by metalorganic chemical vapor deposition (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 408-410 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ferroelectric PbTiO3 thin films have been prepared by a low-pressure MOCVD process. Epitaxial films with a crystal structure of a bulk equilibrium tetragonal phase were readily obtained within a range of growth conditions. However, by providing excess Pb in the growth process, we have observed an epitaxy-induced phase for near-stoichiometry PbTiO3 which possesses a perovskite-like, but possible, orthorhombic structure.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.107897
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  • 7
    Electronic Resource
    Electronic Resource
    Substrate surface step effects on microstructure of epitaxial films (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 3116-3117 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Sapphire (0001) basal plane is a commonly used substrate for film depositions. Due to the threefold rotational symmetry of the (0001) substrate surface, epitaxial films deposited are expected to form at most three variants with relative orientations of 120° and 240°. However, epitaxial TiO2 (tetragonal) and VO2 (monoclinic) films deposited on sapphire (0001) substrates by the metalorganic chemical vapor deposition technique were found to have six variants of relative orientations of 60°, 120°, 180°, 240°, and 300° based on the x-ray diffraction studies. Furthermore, epitaxial MgO (cubic) films deposited on sapphire (0001) substrates by the molecular beam epitaxy technique were found to have two variants which are mirror images about the (12¯10) plane from the high resolution electron microscopy. We show that these unconventional film microstructures found experimentally are caused by the substrate surface steps.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.107978
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  • 8
    Electronic Resource
    Electronic Resource
    Preparation and structure of PbZrO3 epitaxial films by metalorganic chemical vapor deposition (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 1754-1756 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Single-crystal PbZrO3 thin films have been grown on (001) SrTiO3 substrates by metalorganic chemical vapor deposition. The single-crystal nature of c-axis oriented PbZrO3 film is confirmed by x-ray diffraction, selective area electron diffraction, and transmission electron microscopy. The epitaxial relationship between the PbZrO3 film and the SrTiO3 substrate was found to be (001)[100]PbZrO3(parallel)(001)[110]SrTiO3.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109596
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  • 9
    Electronic Resource
    Electronic Resource
    α-Manganese Phases containing Technetium-99 (1961)
    [s.l.] : Nature Publishing Group
    Nature 192 (1961), S. 744-744 
    Details
    ISSN: 1476-4687
    Source: Nature Archives 1869 - 2009
    Topics: Biology , Chemistry and Pharmacology , Medicine , Natural Sciences in General , Physics
    Notes: [Auszug] Table 1. LATTICE PARAMETERS OF SEVERAL O-MANGANESE PHASES CONTAINING TECHNETIUM-99 X-ray data Alloy composition, System atomic per cent a9 (A.) Sc-Tc 87-5 Tc; 12-5 Sc 9-509 ± 0-001 Ti-Tc 87-5 Tc; 12-5 Ti 9-579 ± 0-001 Hf-Tc 87-5 Tc; 12-5 Hf 9-603 ± 0001 Ta-Tc 83-3 Tc: ...
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1038/192744b0
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