Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
75 (1999), S. 3078-3080
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Waveguiding by total internal reflection is demonstrated within AlxGa1−xAs semiconductor heterostructures which have been fully oxidized in water vapor at ∼490 °C. Refractive index, mode propagation constant, propagation loss (≤3 cm−1) at λ0=1.3 and 1.55 μm, secondary ion mass spectrometry depth profile, and Fourier transform infrared transmission spectra measurements are presented to characterize a multimode single-heterostructure oxide waveguide. An index contrast of Δn=0.06 is observed between oxidized x=0.4 and x=0.8 AlxGa1−xAs oxide layers. Absorption loss at 1.55 μm is observed due to OH groups. Near-field images are presented showing waveguiding in a single-mode oxide double heterostructure. © 1999 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.125236
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