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  • 1
    Electronic Resource
    Electronic Resource
    Maternal thyroid hormones and outcome of pre-eclamptic pregnancies (1990)
    Oxford, UK : Blackwell Publishing Ltd
    BJOG 97 (1990), S. 0 
    Details
    ISSN: 1471-0528
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: Summary. Plasma concentrations of total and free thyroxine (TT4 and FT4), total and free triiodothyronine (TT3 and FT3), thyroid-stimulating hormone (TSH), plasma albumin and urate were measured in 39 proteinuric pre-eclamptic patients presenting before labour. Preeclamptic patients had significantly lower FT4 and higher TSH concentrations compared with values in third trimester normotensive pregnancies. There was a significantly higher frequency of lower TT4, TT3 and high TSH levels in the subgroup of pre-eclamptic patients who had low-birthweight babies. Thyroid hormone concentrations were not correlated with gestation at delivery or birthweight but, with the exception of FT4, were correlated with plasma albumin and urate concentrations. Plasma TSH correlated with birthweight and with plasma urate. The results suggest that mild biochemical hypothyroidism may be found in proteinuric pre-eclampsia, and the concentrations of TT4, TT3, FT3 and TSH may reflect the severity of pre-eclampsia.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1471-0528.1990.tb01719.x
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  • 2
    Electronic Resource
    Electronic Resource
    Yellow-to-violet upconversion in neodymium oxide nanocrystal/titania/ormosil composite sol–gel thin films derived at low temperature (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 4865-4867 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Neodymium (III) oxide nanocrystals synthesized by the inverse microemulsion technique were dispersed in sol–gel titania/organically modified silane (ormosil) composite thin films for photonic applications. X-ray diffraction analysis and transmission electron microscopy observation show that the neodymium oxide nanoparticles have a nanocrystalline structure and that the size of the nanoparticles is in the range of 5–60 nm. An intense room-temperature yellow-to-violet upconversion emission at 402 nm (4D3/2→4I13/2) was measured from the composite thin film heated at 100 °C upon excitation with a yellow light at 587 nm. In addition to this violet emission, ultraviolet emission at 372 nm and blue emission at 468 nm were also observed. The lifetime of the violet emission was measured and the mechanism of the upconversion emission is proposed, and they indicate excited-state absorption originating from the long-lived 4F3/2 excited state should be responsible for the yellow-to-violet upconversion. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1408262
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  • 3
    Electronic Resource
    Electronic Resource
    Photoluminescence of erbium oxide nanocrystals/TiO2/γ-glycidoxypropyltrimethoxysilane (GLYMO) composite sol–gel thin films derived at low temperature (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 3058-3060 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Erbium (III) oxide nanocrystals prepared using the inverse microemulsion technique were dispersed in sol–gel TiO2/γ-glycidoxypropyltrimethoxysilane (GLYMO) composite thin films at low temperature. X-ray diffraction analysis and transmission electron microscopy observation show that the erbium (III) oxide nanoparticles have a nanocrystalline structure and their size is in the range from 5 to 30 nm. A relatively strong room-temperature photoluminescence (PL) was observed at 1.531 μm with a full width at half-maximum (FWHM) of 22 nm. The shape, peak position, and FWHM of the PL curve from the composite thin films are quite comparable to those prepared by other methods. The PL peak of the composite thin film reached a maximum intensity after a heat treatment at 300 °C. Fourier transform infrared results show that water and hydroxyl groups are present in the films and are responsible for the luminescence peak intensity reduction of the films heated at higher temperature. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1343516
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  • 4
    Electronic Resource
    Electronic Resource
    High-spatial-resolution quantum-well intermixing process in GaInAs/GaInAsP laser structure using pulsed-photoabsorption-induced disordering (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 2775-2779 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Raman spectroscopy was used to study the spatial resolution of pulsed-photoabsorption-induced quantum-well intermixing in a GaInAs/GaInAsP laser structure. A differential band gap shift of up to 60 meV has been obtained from a sample masked with SixNy/Au and exposed to the laser irradiation. Intermixing was detected in the irradiated regions through the shift of GaAs-like modes to lower frequencies. In addition, the intermixing induced GaInP longitudinal optical modes in the irradiated regions, which is evidence of the intermixing between the upper GaInAs cap and the GaInAsP layer. The spatial resolution of this process, which was obtained from micro-Raman spectra when scanned across the interface of the intermixing mask, was found to be better than 2.5 μm. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.372255
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  • 5
    Electronic Resource
    Electronic Resource
    Photoluminescence of ZnS:Mn embedded in three-dimensional photonic crystals of submicron polymer spheres (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 3513-3515 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: ZnS:Mn has been in-filled in photonic crystals of submicron polymer spheres. The effect of the photonic band gap on the photoluminescence (PL) properties of ZnS:Mn has been investigated. Because of the overlap of the transmission dip of the photonic crystal and the photoluminescence band of ZnS:Mn, both suppression and enhancement in the PL of the phosphor have been observed. A strong dependence of the fluorescence lifetime on the emission wavelength in the range of the stop band has been found. This strong dependence is believed to arise from the very low photon density of state within the stop band of the ZnS:Mn in-filled photonic crystal as result of a high dielectric contrast between ZnS:Mn and the polystyrene spheres. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.126691
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  • 6
    Electronic Resource
    Electronic Resource
    Three-dimensional photonic band gap structure of a polymer-metal composite (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 3337-3339 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A three-dimensional photonic band gap structure based on self-assembled crystals of polystyrene microspheres was fabricated by filling the pores with metallic silver. An almost complete stop band at 580–600 nm is observed in the optical transmission spectra. In comparison with pure polystyrene colloid crystals, the absorption band of Bragg diffraction in the composite was much more intense and broader, due to an enlargement of the contrast between the spheres and the background. A shift to shorter wavelengths in the band occurred because of a decrease in the average refractive index. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.126641
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  • 7
    Electronic Resource
    Electronic Resource
    Wavelength tuning in InGaAs/InGaAsP quantum well lasers using pulsed-photoabsorption-induced disordering (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 2637-2639 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Pulsed-laser irradiation followed by rapid thermal annealing was used to induce layer disordering of an InGaAs/InGaAsP laser structure. A band gap shift larger than 160 nm was achieved using energy densities of about 3.9 mJ mm−2 with 4800 pulses of laser irradiation. Transmission electron microscopy and photoluminescence were used to understand the possible effect of the laser irradiation on the material structure. Band gap-tuned lasers exhibiting blueshift up to 82 nm were obtained. This approach offers the prospect of a powerful and relatively simple postgrowth process for integrating multiple-wavelength lasers for wavelength-division-multiplexing applications. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1362329
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  • 8
    Electronic Resource
    Electronic Resource
    Green upconversion luminescence in Er3+:BaTiO3 films (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 609-611 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Green upconversion emissions at 548 and 528 nm have been obtained from sol-gel derived nanocrystalline Er3+:BaTiO3 films under 980 nm excitation. The green emissions are attributed to the ground-state (4I15/2) -directed transitions from 2H11/2 (528 nm) and 4S3/2 (548 nm) of Er3+ ions. Analysis of the temporal evolution of the emission at 548 nm shows that both excited state absorption of individual ion and energy transfer between the two neighboring ions contribute to the upconversion emissions in Er3+ (3 mol %):BaTiO3 film. The lifetime of the dominant emission at 548 nm is about 90 μs. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.127060
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  • 9
    Electronic Resource
    Electronic Resource
    Evaluation of Schottky contact parameters in metal–semiconductor–metal photodiode structures (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 274-276 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electrical behavior of metal–semiconductor–metal (MSM) Schottky barrier photodiode structures is analyzed by means of current–voltage measurements at different temperatures. The reverse characteristics of the Schottky contact are examined by taking into account the barrier height dependence on the electric field and tunneling through the barrier. It is shown that, under these conditions, the logarithmic dependence of the reverse current on the reverse bias is a linear function and allows us to evaluate the barrier height, saturation current density, and junction ideality factor of the MSM-photodiode Schottky contact. The results are well consistent with experiment. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.126948
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  • 10
    Electronic Resource
    Electronic Resource
    Photoluminescence and electroluminescence from copper doped zinc sulphide nanocrystals/polymer composite (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 2727-2729 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Cu-doped ZnS nanocrystals were prepared in an inverse microemulsion at room temperature as well as under a hydrothermal condition. X-ray diffraction analysis showed that the diameter of the Cu-doped ZnS nanocrystals particles was about 9 nm. These particles showed a strong photoluminescence intensity and a broad emission band from 490 to 530 nm. The half-width of emission was about 60 nm. Cu-doped ZnS nanocrystals/polymethylmethacrylate composite as a light-emitting layer was used to fabricate a single layer structure electroluminescent device which had low turn on voltage (less than 5 V). The green light of electroluminescence was observed at room temperature. The electroluminescence and photoluminescence spectra were nearly identical at room temperature. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122571
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