Library

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    Refractive index, relaxation times and the viscoelastic model in dry-grown SiO2 films on Si (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 1416-1418 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Inert thermal anneals were performed at various temperatures to determine annealing kinetics of dry thermally grown SiO2 films on Si. Two stages of relaxation are demonstrated. The film relaxes quickly to an intermediate level, and then progresses more slowly toward full relaxation. The relaxation times to attain the fully relaxed refractive index, 1.460, and full ≤3% swelling were found to fall below typical oxidation times at T≥1150 °C, in concurrence with the experimentally observed breakpoint in the refractive index versus growth temperature data. It is concluded that the linear viscoelastic model is sufficient to quantitatively explain the breakpoints in refractive index for both wet and dry thermally grown oxide.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.98642
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Nonlinear viscoelastic dilation of SiO2 films (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 151-152 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Oxide dilation in thin films is analyzed using a Voigt viscoelastic model. If stress-dependent viscosity is used to model the dilation, a logarithmic time evolution is predicted. The form of the solution is in agreement with the non-Maxwellian behavior seen in experimental data. The analysis provides an estimate of the critical stress and low-stress viscosity of dry SiO2 films.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101440
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...