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  • 1
    Electronic Resource
    Electronic Resource
    Liquid phase epitaxial regrowth on sulfide-passivated Ga1−xAlxAs (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 970-972 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We demonstrate that Na2S passivation allows liquid phase epitaxial regrowth of Ga0.5Al0.5As upon Ga1−xAlxAs (0.3≤x≤0.8) after air exposure. Large aluminum concentrations require concentrated (2.4 M) sulfide solutions. We have also studied the Ga1−xAlxAs etching rate by Na2S. For large sulfide concentrations or small aluminum concentrations, the etching process stops after some time. These two phenomena are correlated because both of them require the presence on the surface of a stable protective layer. This can be understood by assuming the existence at the surface of two competing mechanisms: etching and passivation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109861
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Thermal annealing of defects in InGaAs/GaAs heterostructures with three-dimensional islands (2000)
    Springer
    Semiconductors 34 (2000), S. 195-204 
    Details
    ISSN: 1063-7826
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract A report is presented on the investigation of the influence of in situ annealing of the InGaAs layer in p-n InGaAs/GaAs structures grown by the metalloorganic chemical vapor deposition upon the formation of coherently strained three-dimensional islands. The structures were studied by the methods of capacitance-voltage measurements, deep-level transient spectroscopy, transmission electron microscopy, and photoluminescence. It is established that three-dimensional islands with misfit dislocations are formed in the unannealed structure A, while quantum dots are formed in the annealed structure B. The deep-level defects were investigated. In structure A, defects of various types (EL2, EL3 (I3), I2, HL3, HS2, and H5) are present in the electron-accumulation layer. Concentrations of these traps are comparable to the shallow donor concentration, and the number of hole traps is higher than that of the electron traps. On the in situ annealing, the EL2 and EL3 defects, which are related to the formation of dislocations, disappear, and concentrations of the other defects decrease by an order of magnitude or more. For structure A, it is established that the population of the quantum states in the islands is controlled by the deep-level defects. In structure B, the effect of the Coulomb interaction of the charge carriers localized in the quantum dot with the ionized defects is observed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.1187932
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  • 3
    Electronic Resource
    Electronic Resource
    A comparison of the temperature dependences of photoeffect quantum efficiencies in GaAs p-n structures and Schottky diodes (1999)
    Springer
    Semiconductors 33 (1999), S. 804-806 
    Details
    ISSN: 1063-7826
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract A comparison is made of how the quantum efficiencies for photoelectric conversion in p-n-and m-s-structures based on GaAs depend on temperature. For photon energies less than or the same order as the width of the band gap, the temperature dependences of the p-n-and m-s-structures are similar. In the range of photon energies larger than the width of the band gap, the quantum efficiency of p-n-structures is temperature independent, whereas the quantum efficiency of m-s-structures exhibits a strong temperature dependence. A qualitative explanation of this phenomenon is given.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.1187786
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  • 4
    Electronic Resource
    Electronic Resource
    Optical anisotropy of the (100) surfaces in AlxGa1−x As ternary compounds (2000)
    Springer
    Physics of the solid state 42 (2000), S. 981-986 
    Details
    ISSN: 1063-7834
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract The reflectance anisotropy spectra of the clean (100) surfaces of the AlxGa1−x As ternary compounds at aluminum concentrations 0≤x≤0.5 have been measured and thoroughly studied. In the spectral range from 1.6 to 3.5 eV, the signal caused by the optical transitions in the arsenic dimers dominates in the spectra of the clean arsenic-terminated GaAs surfaces. For the ternary compounds, an increase in the aluminum concentration brings about the broadening of this signal and its shift toward the low-energy range. This is explained by the appearance of additional signals associated with the optical transitions in the nonequivalent arsenic dimers, in which a part of the Ga atoms in the bulklike bonds is replaced by the Al atoms. An increase in the number of the substituted gallium atoms leads to a decrease in the energy of optical transition in the dimer. The fundamental optical transition energies are determined for the nonequivalent dimers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.1131323
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    Paper (German National Licenses)
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