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  • 1
    Electronic Resource
    Electronic Resource
    Symmetry consideration of Raman modes in Nd-doped lead zirconate titanate thin films for structure characterization (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 1065-1072 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A short group-theoretical discussion is given of phonon symmetries in different phases of the Pb(ZrxTi1−x)O3 (PZT) perovskite together with a description of the degeneracy splitting in consequence of the long-range Coulomb fields both in the paraelectric cubic phase and ferroelectric tetragonal and trigonal phases. Phonon symmetries together with the frequency splitting are used for the consideration of Raman modes, measured from Nd-doped PZT thin films with Zr concentrations below or near to the morphotropic phase boundary between the ferroelectric tetragonal and trigonal phases. Raman spectroscopy was used in addition to x-ray diffraction experiments for the characterization of the phase structure in the films. Raman spectra were measured at room temperature and also at some higher temperatures up to 318 °C. A XeCl-excimer laser was used for the pulsed laser ablation of thin films from a Pb0.97Nd0.02(Zr0.55Ti0.45)O3 target on sapphire and MgO substrates without substrate heating. After ablation, the amorphous films were annealed at temperatures between 700 and 900 °C. Energy dispersive spectroscopy of x rays was used for the composition analysis of the films. Different film compositions were obtained by using different laser-beam fluences during the ablation process. The Zr/(Zr+Ti) ratio in the films varied between 0.32 and 0.50. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360895
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  • 2
    Electronic Resource
    Electronic Resource
    Characterization of Pb0.97Nd0.02(Zr0.55Ti0.45)O3 thin films prepared by pulsed laser ablation (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 2139-2143 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Pulsed laser ablation was used to deposit Nd-doped lead zirconate titanate (PZT) thin films with thickness 100–200 nm from a Pb0.97Nd0.02(Zr0.55Ti0.45)O3 target. The films were ablated onto sapphire substrates with R-plane surfaces, without heating and at a pressure of 5×10−5 mbar using a XeCl excimer laser (pulse energy about 50 mJ, wavelength 308 nm, pulse duration about 20 ns). Energy dispersive spectroscopy (EDS) of x rays was used for the composition analysis of both annealed and unannealed (amorphous) films deposited using various substrate-target distances and laser-beam fluences. It was found that the distance between target and substrate together with the laser-beam energy density on the surface of the target had a significant effect on the composition of the films. From the composition analysis, a suitable range of values was found for the target-substrate distance and fluence to deposit films with correct composition of each component. Lead deficiency was also found in the films in the case of high fluence ((approximately-greater-than)1.5 J cm−2 with the target-substrate distance 〈40 mm), probably due to resputtering, while low fluence values (〈1.0 J cm−2 with the target-substrate distance (approximately-greater-than)40 mm) gave an excess of lead and too high Ti/(Zr+Ti) ratios. The films were annealed 2 h at 750 °C with and without PZT powder. The composition analysis revealed that the films with an excess of lead before annealing had almost the correct amount of lead after annealing. On the other hand, it was not possible to compensate the lead deficiency through annealing in a lead atmosphere. EDS and x-ray diffraction were used to determine the crystal structure of annealed films. Trigonal and tetragonal perovskite structures were the major and minor phases of the films, respectively. Some Raman spectra measured from annealed films were found to be typical to PZT.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357625
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  • 3
    Electronic Resource
    Electronic Resource
    Electrical and mechanical properties of ferroelectric thin films laser ablated from a Pb0.97Nd0.02(Zr0.55Ti0.45)O3 target (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 3469-3477 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ferroelectric Nd-modified lead-zirconate-titanate (PZT) thin films were fabricated as capacitor structures with platinum electrodes using pulsed laser ablation deposition. Single-crystal MgO (100) and thermally oxidized Si (100) were used as substrates. The ablation processes were carried out at room temperature in a pressure of 4×10−5 mbar in a vacuum chamber. A pulsed XeCl excimer laser with the wavelength of 308 nm was used for the ablation of both platinum and Pb0.97Nd0.02(Zr0.55Ti0.45)O3 targets. For the PZT films with thicknesses between 300 and 600 nm, a laser-beam fluence of 1.0 J/cm2 was used. Amorphous PZT films were postannealed at 675 and 650 °C in the cases of MgO and silicon substrates, respectively. The dielectric constant and the loss angle were measured at room temperature as a function of the film thickness. On the MgO substrate the dielectric constant of the films increased from 400 to 600 with the increasing film thickness, while in the films on the silicon substrate the dielectric constant was typically 140. The Curie temperature of the films was about 360 °C. The remanent polarization was about 18 μC/cm2 in the films deposited on MgO, but in the films on the silicon substrate the polarization values were much lower. The conductivity of the PZT thin films was studied as a function of temperature and electric field. Low-field resistivities of the order of 1012 Ω cm were measured at room temperature. Macroscopic mechanical stresses in the PZT films were measured by the x-ray diffraction method. The films on the MgO substrate were in a compressive stress, while in the films on the silicon substrate a higher tensile stress was found. The dielectric constant was found to decrease and the coercive field to increase with the increasing mechanical stress. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.365663
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  • 4
    Electronic Resource
    Electronic Resource
    The effect of microstructure on the height of potential energy barriers in porous tin dioxide gas sensors (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 5159-5165 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A theoretical study is made on the height of potential energy barriers formed at intergranular contacts in porous tin dioxide. Expressions are derived for the height of barriers in a one-dimensional case when the donor concentration is constant and also when there is a concentration gradient in the surface. Expressions are also derived for the case when the intergranular contact is in the shape of a cylinder. The treatment in this case, together with the application of Fermi–Dirac statistics, leads to a conclusion of the existence of a distribution of the height of barriers. The potential barrier on the center line of the cylinder vanishes above a critical radius. The effect of the distribution of the height of barriers on the activation energy of the conductance of porous tin dioxide is discussed on the basis of a random barrier network model.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.340419
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  • 5
    Electronic Resource
    Electronic Resource
    Response to nitrix oxide of thin and thick SnO"2 films containing trivalent additives
    Amsterdam : Elsevier
    Sensors and Actuators B: Chemical 1 (1990), S. 79-82 
    Details
    ISSN: 0925-4005
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Chemistry and Pharmacology , Electrical Engineering, Measurement and Control Technology
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0925-4005(90)80176-Z
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  • 6
    Electronic Resource
    Electronic Resource
    Reduction of the interference caused by NO and SO"2 in the CO response of Pd-catalysed SnO"2 combustion gas sensors
    Amsterdam : Elsevier
    Sensors and Actuators B: Chemical 4 (1991), S. 479-484 
    Details
    ISSN: 0925-4005
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Chemistry and Pharmacology , Electrical Engineering, Measurement and Control Technology
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0925-4005(91)80155-D
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  • 7
    Electronic Resource
    Electronic Resource
    Sensitivity and selectivity of doped SnO"2 thick-film sensors to H"2S in the constant- and pulsed-temperature modes
    Amsterdam : Elsevier
    Sensors and Actuators B: Chemical 6 (1992), S. 248-252 
    Details
    ISSN: 0925-4005
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Chemistry and Pharmacology , Electrical Engineering, Measurement and Control Technology
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0925-4005(92)80063-4
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  • 8
    Electronic Resource
    Electronic Resource
    NO"2 monitoring as an air pollutant using lead phthalocyanine thin film sensors
    Amsterdam : Elsevier
    Sensors and Actuators B: Chemical 7 (1992), S. 522-525 
    Details
    ISSN: 0925-4005
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Chemistry and Pharmacology , Electrical Engineering, Measurement and Control Technology
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0925-4005(92)80357-4
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  • 9
    Electronic Resource
    Electronic Resource
    Detection of NO and unburnt gases in combustion processes using SnO"2 sensors operated at different temperatures
    Amsterdam : Elsevier
    Sensors and Actuators B: Chemical 7 (1992), S. 700-703 
    Details
    ISSN: 0925-4005
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Chemistry and Pharmacology , Electrical Engineering, Measurement and Control Technology
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0925-4005(92)80388-E
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  • 10
    Electronic Resource
    Electronic Resource
    Computer simulation of the surface energy barrier of oxidic semiconductors with mobile donors
    Amsterdam : Elsevier
    Sensors and Actuators B: Chemical 19 (1994), S. 711-715 
    Details
    ISSN: 0925-4005
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Chemistry and Pharmacology , Electrical Engineering, Measurement and Control Technology
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0925-4005(93)01219-T
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