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  • 1
    Electronic Resource
    Electronic Resource
    Near band-edge optical properties of GaAs at interfaces of ZnSe/GaAs/GaAs by phase selection in photoreflectance (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 425-429 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: GaAs at the ZnSe/GaAs and GaAs/GaAs interfaces of ZnSe/GaAs/GaAs heterostructures is studied by phase selective photoreflectance (PR) spectroscopy. Four samples with ZnSe layers of various thickness were examined. We unambiguously determined the origin of two different features observed in the PR spectra by combining in phase and out of phase measurements, with PR measurements employing excitation lasers with different wavelengths. These two features are found to originate at different regions of the heterostructure. One contributing transition is a bulk-like signal, resembling that of bare GaAs, which originates in a region that encompasses the buffer layer/substrate GaAs homointerface. A second contributing signal is attributed to a strained region adjacent to the ZnSe/GaAs heterointerface. Both this second signal and the bulk-like signal show Franz–Keldysh oscillations that allow us to determine the electric field strength at the ZnSe/GaAs and GaAs/GaAs interfaces. It is found that the electric field strength at the heterointerface is larger than that of the homointerface. Reflectance difference measurements further support the existence of two spatially separated GaAs regions, which produce two independent overlapping optical modulated signals in the ZnSe/GaAs/GaAs heterostructures. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.370747
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  • 2
    Electronic Resource
    Electronic Resource
    Photoreflectance spectroscopy of CdTe(001) around E1 and E1+Δ1: linear electro-optic spectrum (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 2062-2065 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the measurement of the linear electro-optic (LEO) reflectance spectrum of CdTe (001) in an energy range around the E1 and E1+Δ1 interband transitions. This spectrum shows a sharp peak localized in energy around E1 and a second shorter peak around E1+Δ1. We show that the theoretical model developed in an earlier article for the LEO line shape of GaAs (001) gives an accurate description of the experimental LEO CdTe spectrum as well. This model includes two contributions to the LEO line shape, a first one proportional to the normalized energy derivative of the reflectance spectrum and a second one associated to the sample reflectance. The large spin-orbit splitting energy of CdTe, (Δ1(approximate)0.6 eV) allows for a neat separation of the contributions to the LEO spectrum of the E1 and E1+Δ1 critical points, providing a critical test for the LEO line shape model. From the fitting we obtain d′/d=1.5 for the conduction band to valence band deformation potential ratio and E2=9.1 eV for the interband deformation potential in the Brooks notation. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371009
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  • 3
    Electronic Resource
    Electronic Resource
    A spectrometer for the measurement of reflectance-difference spectra (1993)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 64 (1993), S. 2147-2152 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: We describe a spectrometer (visible-ultraviolet photon energy range) for the measurement of reflectance-difference spectra of cubic semiconductors. The spectrometer employs a photoelastic modulator to modulate the polarization of the light incident on the sample and allows for a simple procedure to correct the measured spectra for parasitic components associated with such modulation. The instrument reported has a higher throughput than more conventional setups. To illustrate the spectrometer performance we report on reflectance-difference spectra of (001) oriented GaAs single crystals doped with silicon donors at a level of 1018/cm3.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1143952
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  • 4
    Electronic Resource
    Electronic Resource
    A simple heater for use in a thermoreflectance spectrometer (1991)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 62 (1991), S. 2034-2035 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: We present a simple heater for sample temperature modulation in a thermoreflectance spectrometer. The performance of the heater is evaluated by determining the band to band transition energies at the E1 and E1+Δ1 critical points of GaAs.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1142360
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  • 5
    Electronic Resource
    Electronic Resource
    Refractive indices of zincblende structure β-GaN(001) in the subband-gap region (0.7–3.3 eV) (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 441-443 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Refractive indices n and absorption coefficients α of epitaxial metastable zincblende structure β-GaN(001) were determined over the subband-gap energy range between 0.8–3.1 eV from an analysis of optical transmission spectra. n was found to vary from 2.25 to 0.8 eV (1.55 μm) to 2.50 at 3.1 eV (0.4 μm) with an energy E (eV) dependence that is well described by a Sellmeir-type dispersion relationship, n2(E)=1+148/(38.3−E2). The refractive indices of β-GaN are 3%–4% smaller than previously reported values for hexagonal α-GaN. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116406
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  • 6
    Electronic Resource
    Electronic Resource
    Thermoreflectance studies in Cd1−xFexTe thin films (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 5154-5158 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thermoreflectance spectroscopy (TR) has been used to analyze Cd1−xFexTe thin films grown by radio-frequency sputtering on glass substrates. Films with different Fe concentration x in the range 0.05≤x≤0.15 were grown under the same conditions of substrate temperature and Ar pressure. To follow the growth of the ternary CdFeTe compound, the evolution of the E0 point in the spectrum was monitored for different films. Compared to a CdTe film grown under the same conditions, the CdFeTe films show a shift in the spectrum of the E0 point to higher energies for x=0.05, 0.10, and 0.15. Besides, both CdTe and CdFeTe films show evidence of the presence of a band of localized states below the band gap, probably related to the growth mechanism. For an x value of 0.10, the TR spectrum shows a line shape related to the presence of an extra transition that we have interpreted as due to additional levels arising from the Fe 3d orbitals.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354278
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  • 7
    Electronic Resource
    Electronic Resource
    High-efficiency GaAsGa"1"-"xAl"xAs single-heterostructure light emitting diodes
    Amsterdam : Elsevier
    Solid State Electronics 22 (1979), S. 115-116 
    Details
    ISSN: 0038-1101
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0038-1101(79)90183-7
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  • 8
    Electronic Resource
    Electronic Resource
    Measurements of above-bandgap optical anisotropies in the (0 0 1) surface of GaAs
    Amsterdam : Elsevier
    Solid State Communications 64 (1987), S. 809-811 
    Details
    ISSN: 0038-1098
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0038-1098(87)90706-X
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