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  • 1
    Electronic Resource
    Electronic Resource
    Fine structure relaxation of aluminum by atomic argon between 30 and 300 K: An experimental and theoretical study (1998)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 108 (1998), S. 10319-10326 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: This paper reports the first measurements at low temperatures (44–137 K) of rate coefficients for collision induced spin-orbit transitions, using a swarm experiment consisting of a uniform supersonic flow coupled with pulsed laser photolysis and laser-induced fluorescence techniques. It has been stated that both excitation and relaxation rates have a positive temperature dependence. The excitation (respectively relaxation) rate constant is 0.15×10−12 cm3 s−1 (respectively 1.63×10−12) at 53 K and 2.76×10−12 cm3 s−1 (respectively 4.48×10−12) at 137 K. A theoretical modelization of the Al–Ar system has been developed in the 30–300 K range, that reproduces the temperature dependence. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.475342
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  • 2
    Electronic Resource
    Electronic Resource
    Rate coefficients for the reactions of Si(3PJ) with C2H2 and C2H4: Experimental results down to 15 K (2001)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 115 (2001), S. 6495-6503 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Rate coefficients for the reaction of ground-state silicon atoms Si(3PJ) with acetylene and ethylene have been measured at temperatures down to 15 K. The experiments have been performed in a continuous flow CRESU (Cinétique de Réaction en Ecoulement Supersonique Uniforme) apparatus using pulsed laser photolysis of Si(CH3)4 to generate Si(3PJ) atoms and laser-induced fluorescence to observe the kinetic decay of the atoms and hence determine the rate coefficients. Both reactions are found to be fast, and the reaction rates show a very mild dependence on temperature. The rate coefficients match the expressions k(Si+C2H2)=(2.6±0.6)10−10(T/300)−(0.71±0.24) exp(−(29±10)/T) cm3 molecule−1 s−1 and k(Si+C2H4)=(3.7±0.3)10−10(T/300)−(0.34±0.10) exp(−(16±4)/T) cm3 molecule−1 s−1 in the temperature range 15–300 K. The nature of the products and the similarities of the carbon and silicon chemistry are discussed. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1396855
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    Paper (German National Licenses)
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