ISSN:
1662-9752
Quelle:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Thema:
Maschinenbau
Notizen:
This paper reports recent progress in the development of a vertical JFET, the purely verticalJFET based on trenched-and-implanted vertical JFET (TI-VJFET) approach that eliminates the needof epitaxial regrowth at middle of device fabrication and the need of a merged lateral JFET to controlthe vertical JFET. Different structures have been designed to target breakdown voltages ranging from600V to 1.2kV. Vertical channel width uniformity has been studied, showing the feasibility ofachieving below 0.1um variation for reasonably flat wafers of good thickness uniformity. Pitch size ofthe designs has been reduced compared to early report. Gate trench width has been reduced from3.8um to 2.3um, aimed at increasing the device current capability. Fabricated device cells have beentested and packaged into multi-cell 30A TI-VJFETs which have been characterized of DC andswitching characteristics at room and elevated temperatures. Very fast current rise/fall times of 〈10nswere observed from RT to 200°C. PSpice model for TI-VJFET has been developed and applied to theperformance prediction of 3-phase SiC power inverter, suggesting a high efficiency 97.7% at 200°Cjunction temperature without using soft-switching scheme. Preliminary experimental demonstrationof a PWM-controlled three-phase inverter based on SiC TI-VJFET power board is reported
Materialart:
Digitale Medien
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/13/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.527-529.1191.pdf
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