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  • 1
    Electronic Resource
    Electronic Resource
    Photoluminescence of n-type CdTe:I grown by molecular beam epitaxy (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 4541-4545 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Liquid helium temperature and temperature-dependent photoluminescence (PL) spectroscopy have been performed on highly n-type-doped CdTe:I films grown by molecular beam epitaxy. The samples were grown on 2° off (001) oriented bulk CdTe substrates at substrate temperatures from 170 to 250 °C, and exhibit room-temperature electron concentrations of 1×1017 cm−3. The brightest PL edge emission at liquid helium and room temperatures was observed from a sample grown at 210 °C. At T=5 K, the iodine donor radiative recombination was observed at 1.593 eV, corresponding to a donor ionization energy of 14 meV for the ITe substitutional donor, in agreement with the predicted hydrogenic donor ionization energy for CdTe. The thermal quenching behavior of the edge emission peak is a two-step process involving both 10 and 14 meV activation energies. These activation energies are related to the thermalization of the ITe donor from the ground state to the first excited state (1s→2s, 10 meV), and complete thermalization from the donor ground state to the conduction band (14 meV).
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352798
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  • 2
    Electronic Resource
    Electronic Resource
    Low-temperature photoluminescence from bulk CdTe and Cd0.967Zn0.033Te (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 1191-1195 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Low-temperature photoluminescence spectroscopy has been performed on bulk CdTe and Cd1−xZnxTe (x=0.033) in the emission region near the band-gap energy. A method to distinguish the free-exciton recombination band from other close-lying emissions in these materials is described. From the identification of the free-exciton emission, the band-gap energy was then determined. Radiative emission bands involving exciton–phonon quasiparticles were clearly observed above the band-gap energy at temperatures up to 40 K. The sample variation in the above-band-gap emission indicates that the exciton–phonon quasiparticle energy depends on the presence of donors and/or acceptors. In addition, the above-band-gap emission related to (e,h) transitions between the conduction band and valence band in these materials is observed. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360356
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  • 3
    Electronic Resource
    Electronic Resource
    Donor-acceptor pair luminescence involving the iodine A center in CdTe (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 5669-5674 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoluminescence studies from 5 to 296 K have been performed on a series of iodine-doped CdTe epilayers grown by molecular beam epitaxy. The samples exhibit excess electron concentrations in the range from 8×1016 to 3×1018 cm−3. Bright edge emission is observed at 296 K from all samples. A deep-level band centered near 1.45 eV is observed at T〈210 K and increases in intensity with doping level. A correlation of growth parameters with photoluminescence data fits a model of the deep-level band being predominantly donor-acceptor pair recombination involving the shallow iodine donor (ITe) and the iodine A-center acceptor complex (VCd-ITe). Zero-phonon emission related to this pair recombination occurs at 1.470 eV at 5 K. Thermal quenching of the integrated intensity of this donor-acceptor band is described by activation energies of 15 and 125 meV corresponding to thermalization of electrons from shallow ITe donors to the conduction band and complete thermalization from the valence band to iodine A centers, respectively. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359623
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  • 4
    Electronic Resource
    Electronic Resource
    Selective excitation of an associate donor-acceptor pair complex in iodine-doped CdTe (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 4544-4547 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Luminescence at 1.491 eV was detected at liquid-helium temperatures from CdTe epilayers heavily doped with iodine. The relatively sharp emission band (FWHM=4.4 meV) was observed under both above-band-gap and below-band-gap excitation. The intensity of the 1.491 eV emission was highly dependent on sample temperature and could only be detected below 45 K. Using the tunable output from a titanium:sapphire laser, selective excitation of this emission was performed to identify the recombination center. A localized mode of 36.5 meV, much larger than the 21.3 meV bulk CdTe mode, is associated with the defect center. We identify the defect as an associate donor-acceptor pair complex resulting from nearest neighbor cation (NaCd) and anion (ITe) point defects. The energy level associated with the (Na−Cd-I+Te) neutral associate pair is approximately 0.115 eV below the CdTe conduction band. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359416
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  • 5
    Electronic Resource
    Electronic Resource
    Optical quenching of bound excitons in CdTe and Cd1−xZnxTe alloys: A technique to measure copper concentration (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 537-541 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A noncontact, nondestructive optical technique with potential to measure the acceptor impurity concentrations in bulk CdTe and Cd1−xZnxTe alloys is described here. The technique, called optical quenching, uses an infrared light source in conjunction with the above-band-gap excitation beam used in standard photoluminescence spectroscopy. The quenching, or decrease, of acceptor-bound exciton emission is related to the incident infrared beam flux. The rate at which the infrared photons ionize neutral acceptors can be used to determine relative concentrations of the substitutional centers. We have applied this technique to the copper acceptor-bound exciton in CdTe and Cd1−xZnxTe bulk samples. The 1.064 μm output from a Nd:YAG laser provided near-resonant absorption with the copper acceptor level. Relative copper concentrations in the range from 4×1014 to 1×1016 cm−3 were obtained. These values agree reasonably well with sample comparisons based on atomic absorption data.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357107
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